IL 100 DIODE Search Results

DFJ10E

Abstract: DBF60B DBB08B DLC20C DBF60E DBA150E DO-41SS
Contextual Info: High-speed Rectifiers Super fast-recovery diodes V rm (V) lo (A) 1.0 DFJ10C DFJ10E DFJ10G 1.5 DFD15C DFD15E DFD15G 3.0 DFE30C DFE30E DFE30G Package type trr (ns} 600 200 100 y - .il DO-41 SS, 5 mm pitch 100 DO-15L 100 DO-201 AD Very High-speed Rectifiers (Low-loss diodes)

2N7236

Abstract: 2N7236 JANTXV 2N7236 JANTX KIV* diode CCII APPLICATION me 555 IRFM9140 D 1380 Transistor
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER | I R | REPETITIVE AVALANCHE RATED AND dv/dt RATED •RFM914Q SN7S36 JAIMSSN7S36 JANTXSN7S36 JAIMTXVSN7S36 TRANSISTOR Il P-CHANNEL [REF: M IL-S-19500/S9B ] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET technology is the key to International

33N10

Abstract: SGS Transistor
Contextual Info: STP33N1o STP33N10FI SGS-THOMSON iLü «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N 10 STP33N 10FI V dss RDS on Id 100 V 0 .0 6 L i 33 A 100 V 0 .0 6 a 18 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

IXYS DS 145

Contextual Info: PIXYS_ MegaMOS FET IXTH/IXTM 67N10 IXTH / IXTM 75N10 p v DSS ^D25 100 V 100 V 67 A 75 A DS on 25 mi] 20 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj =25°C to150°C 100 V VDQB T j = 25° C to 150° C; RGS= 1 M il 100 V VGS

GC2269

Contextual Info: SGS-THOMSON STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 50XI . . • . . V dss RoS on Id 500 V 4 il 1,7 A AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLICATION O RIENTED CHARACTERIZATION

Contextual Info: v il ^ i\ iv A IL IN A January 1993 FEATURES • 100% architecture, pin out, and software compatible with XC3000 devices • Ultra-High speed, up to twice that of XC3000-125 - 50-80 MHz system clock rates - Flip-flop toggle rates of 190 to 270 MHz - Performance equivalent to 10 ns PALs in many

STH4N80

Contextual Info: SGS-THOMSON KLtKSTT^OKlDCeS STH4N80 STH4N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH4N80 STH4N80FI V dss R dS oii Id 800 V 800 V 3 Q 3 il 4.3 A 2.8 A . • . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

rs103

Abstract: DC028 D461D
Contextual Info: ANALOG DEVICES 28 V/100 WDODC Converters with Integral B il Fiter ÆDC02812D/VÆDC02815DA FEATURES 28 V de Input, ± 1 2 V d c < >8.34 A, 100 W Output ADDC02812DA 28 V de Input, ± 1 5 V d c ( 16.68 A, 100 W Output (ADDC02815DA) Integral EMI Filter Designed to Meet MIL-STD-461D

Contextual Info: STE180N10 N - CHANNEL 100V - 5.5 m£1 - 180A - ISOTOP POWER MOSFET TYPE V STE180N10 • . . . . d s s 100 V R d S o ii < 7 m£2 Id 180 A TYPICAL RDS(on) = 5.5 m il 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD

MRD500

Abstract: theory phototransistor AN-440 MRD300 theory phototransistor RD510 MRD510 AN-508 AN508 glass lens phototransistor
Contextual Info: MRD500 silicon MRD510 100 VO LT PHOTO DIO D E PIN SILIC O N PIN SIL IC O N PHOTO DIO DE 100 M IL L IW A T T S . designed for application in laser detection, light demodulation, detection of visible and near infrared light-emitting diodes, shaft or position encoders, switching and logic circuits, or any design requiring

2033C

Abstract: TRANSISTOR SN 5551
Contextual Info: WCH p r^ i CRMANCE ANALOG IN~EGRATEi: CIRCU'TS Features • Differential gain 0.1% • Differential phase 0.1° • 100 mA continuous output current guaranteed • Short circuit protected • Wide bandwidth— 100 MHz • High slew rate—1200 V/^is • H igh input impedance—2 M il

diode BY127

Abstract: BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE
Contextual Info: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W - & Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO11 PKG TYPE D041/D015 D015 II I D0204/VP Il li D041 I Sr VRRM (volts) - 50 GP10A BYW27-50 G1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/

diodes byt

Abstract: diodes byw VRRM 600 IO 20 IN1344B 61100 IN1190
Contextual Info: THOMSON M IL E T S P A T IA U X SSE T> • T D 2 b fl7 E DDDDMflfl i m ■THCP1 T^&f- DESCRIPTION PRODUCT PACKAGE According to CECC 50000 DISCRETE COMPONENTS RECTIFIER DIODES = 50 V I0 = 12 A ■ BYW 88-100, R * v r r m = 100 V l0 = 12 A ■ BYW 88-200, (R)* V rrm = 200 V

IRF150M

Contextual Info: SGS-THOMSON * 5 iL iO T O K S 7 IR F 150 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 1 5 0 . . . . • V d ss 100 V R D S o n Id 0 .0 5 5 n 40 A AVALANC HE RUG G EDNESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA A T 100°C

14N05

Abstract: BR03 TK14N GCJ4360
Contextual Info: STK14N05 STK14N06 SGS-THOMSON iL[IOT g «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS(on) Id STK14N 05 50 V 0 .1 2 Ü 14 A 60 V 0.12 £2 14 A STK14N 06 ! r AVALANCHE RUGGEDNESS TECHNOLOGY , 100% AVALANCHE TESTED , REPETITIVE AVALANCHE DATA AT 100°C

n52a

Abstract: STVHD90FI STVHD90
Contextual Info: SGSTHOMSON STVHD90 STVHD90FI IL D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STVHD90 STVHD90FI 50 V 50 V R d S ofi 0.023 U 0.023 n Id 52 A 29 A . . . . . . AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

IRF9520

Abstract: VG 9523 g a 9523 g IRF9523 9523 IRF9521 9521
Contextual Info: IRF9520/9521 /9522/9523 C Z ”S ilico n ix <A Jf in c o rp o ra te d P-Channel Enhancement Mode Transistors TQ-220AB TOP VIEW o PRODUCT SUMMARY PART NUMBER V BR DSS IRF9520 r DS(ON) •d (il) (A) -100 0.60 -6.0 IRF9521 -60 0.60 -6.0 IRF9522 -100 0.80 -5.0

DSS41A05

Abstract: dss41a12 dss41a24 DSS41B05 DSS41A05 SRC devices mss41a12 SIL41A05 DSS41B12 MSS41A05 SIL41B05
Contextual Info: DEVICES SRC SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 SPECIFICATIONS MVS4 Non-Position-Sensitive Hg-Wetted SYMBOL MIN TYP MAX MIN TYP MAX VL IL IC CR - - 1000 1 2 3 50(4) 100 - - - 1000 2 50 7 Hg 40 - 200 7 Hg 16 500 2 3 50 100 - IR 1010 1012 - 108 1010

irf9530

Abstract: irf 9530 f953
Contextual Info: IRF9530/9531 /9532/9533 c r S ilic a n ix in c o rp o ra te d P-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V) lDS(ON) ( il) (A) IRF9530 -100 0.30 -1 2 IRF9531 -6 0 0.30 -1 2 IRF9532 -100 0.40 -10 IRF9533

Contextual Info: rzT SGS-THOMSON Ä 7# » œ s iL IC T r a ie S S T D 1 5 N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS on S TD15N06 60 V < 0.1 n •d % 15 A Q . TYPICAL RDS(on) = 0.075 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

MOD100A

Contextual Info: MOD100A/100B/100C f X S if ic o n i x in c o r p o r a t e d 4 N-Channel Enhancement Mode Transistors HERMETIC MODULE TOP VIEW PRODUCT SUMMARY PART NUMBER V BR DSS (V) rDS(ON) (il) >D (A) LEADFORM OPTION MODIOOA 100 0.08 21 Straight MODIOOB 100 0.08 21 Bent Down

1n914 equivalent

Abstract: diode RU 3B 1N914 1N914-B 1N914-HV 1N914-N 1N914-R 1N914-RN DF100
Contextual Info: DIODES • A V A IL A B L E IN 16 PIN D IP A R R A Y S 1N 914-R N 1N 91 4-H V 1N 9 1 4 -B DE 100 DF100 @ Vf=1.0V 5.0 <2 75V 0.025 @ 20V 10 1.0 i 10 10 100 75V 0.001 @ 20V 60 5.0 H 50V 0.025 @ 20V 60 1.0 (i 0.001 200 1.0 H 75V 0.001 @ 20V 10 10 75 5.0 ü

TS 100-12

Contextual Info: ÖIXYS MH 100*12 A3 MIO 100*12 A3 Um 100-12 A3 IGBT M odules lC25 = 135 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- • i : E 72873 P relim in ary data S ym bo l C o n d itio n s M ax im u m R atin g s

Contextual Info: BAT54/A/C/S Vishay Telefunken Surface Mount Schottky Barrier Diodes 94 8550 Absolute Maximum Ratings Tj = 25°C Test Conditions Symbol Value 30 Unit V 600 300 100 200 200 -55.+125 mA mA mA mA mW "C Value 500 Unit K/W II i i> >> il Parameter Repetitive peak reverse voltage