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Infineon Technologies AG IPB180N10S402ATMA1 - Tape and Reel (Alt: IPB180N10S402ATMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IPB180N10S402ATMA1	Tape & Reel	1,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $2.28 10000 $2.20	Buy Now
Mouser Electronics	IPB180N10S402ATMA1		46			1 $7.02 10 $3.72 100 $3.40 1000 $2.82 10000 $2.82	Buy Now
Newark ()	IPB180N10S402ATMA1	Cut Tape	2,348		1	1 $5.63 10 $5.63 100 $2.73 1000 $2.48 10000 $2.38	Buy Now
	IPB180N10S402ATMA1	Tape & Reel	2,348		100	1 - 10 - 100 $2.73 1000 $2.48 10000 $2.38	Buy Now
Rochester Electronics	IPB180N10S402ATMA1		110,679		1	1 - 10 - 100 $2.43 1000 $2.18 10000 $2.05	Buy Now
TME	IPB180N10S402ATMA1				1,000	1 - 10 - 100 - 1000 $2.95 10000 $2.95	Get Quote

EBV Elektronik	IPB180N10S402ATMA1			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IPB180N10S402ATMA1		24,900			1 - 10 $7.13 100 $5.55 1000 $5.55 10000 $5.55	Buy Now
Infineon Technologies AG IPP180N10N3GXKSA1 Trans MOSFET N-CH 100V 43A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP180N10N3GXKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IPP180N10N3GXKSA1	Tube	67	30 Weeks	50	1 - 10 - 100 $0.54 1000 $0.52 10000 $0.52	Buy Now
Mouser Electronics	IPP180N10N3GXKSA1		1,225			1 $2.57 10 $1.63 100 $1.10 1000 $0.80 10000 $0.65	Buy Now
Newark	IPP180N10N3GXKSA1	Bulk			1	1 $2.42 10 $1.55 100 $1.05 1000 $0.82 10000 $0.79	Buy Now
TME	IPP180N10N3GXKSA1				1	1 $1.56 10 $0.89 100 $0.70 1000 $0.68 10000 $0.68	Get Quote
EBV Elektronik	IPP180N10N3GXKSA1		500	36 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STH180N10F3-2 Power MOSFET, N Channel, 100 V, 180 A, 0.0039 ohm, H2PAK-2, Surface Mount - Tape and Reel (Alt: STH180N10F3-2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STH180N10F3-2	Tape & Reel		15 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	STH180N10F3-2		88			1 $5.69 10 $2.98 100 $2.72 1000 $2.30 10000 $2.30	Buy Now
Newark	STH180N10F3-2	Bulk			1	1 $6.29 10 $4.39 100 $3.31 1000 $3.04 10000 $3.04	Buy Now
Avnet Silica	STH180N10F3-2		1,000	16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STH180N10F3-2		17,000	16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	STH180N10F3-2		15,505			1 - 10 $5.90 100 $3.93 1000 $3.93 10000 $3.93	Buy Now
Infineon Technologies AG IPD180N10N3GBTMA1 Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IPD180N10N3GBTMA1	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	IPD180N10N3GBTMA1		10,837			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IAUA180N10S5N029AUMA1 - Tape and Reel (Alt: IAUA180N10S5N029AUMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IAUA180N10S5N029AUMA1	Tape & Reel		26 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $1.41	Buy Now
Mouser Electronics	IAUA180N10S5N029AUMA1		1,518			1 $4.25 10 $2.17 100 $1.97 1000 $1.65 10000 $1.55	Buy Now
Newark ()	IAUA180N10S5N029AUMA1	Cut Tape	1,936		1	1 $4.80 10 $4.80 100 $2.51 1000 $2.15 10000 $2.06	Buy Now
	IAUA180N10S5N029AUMA1	Tape & Reel	1,936		100	1 - 10 - 100 $2.51 1000 $2.15 10000 $2.06	Buy Now
Rochester Electronics	IAUA180N10S5N029AUMA1		52,901		1	1 - 10 - 100 $1.34 1000 $1.20 10000 $1.13	Buy Now
TME	IAUA180N10S5N029AUMA1				2,000	1 - 10 - 100 - 1000 - 10000 $1.63	Get Quote

EBV Elektronik	IAUA180N10S5N029AUMA1			27 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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180N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
180N10 Contextual Info: Advanced Technical Information IXFX 180N10 IXFK 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient	Original	180n10 247tm o-264	PDF
Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	180n10 ot-227 e153432 125oc	PDF
180N10 Abstract: 125OC Contextual Info: IXFK 180N10 IXFX 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V	Original	180n10 125oc	PDF
Contextual Info: IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	180n10 227tm ixfn180n10 728b1	PDF
Contextual Info: mxYS Advanced Technical Information HiPerFET Power MOSFET IXFN 180N10 DSS I D25 RDS on Single MOSFET Die Tj = 25°C to 150°C Tj = 25°C to 150°C, Rgs = 1M£2 100 100 V V Vos« Continuous Transient ±20 ±30 V V Tc =25°C Terminal (current limit) T 0 = 25° C; pulse width limited by TJM	OCR Scan	ixfn180n10 ot-227	PDF
Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)	Original	180n10 ot-227 e15000 100khz +1125oc	PDF
Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFR 180N10 V DSS = 100 ISOPLUS247™ ^D25 ” 165 VDSS ^ = 25°Cto150°C Tj = 25°Cto 150°C; RGS= 1 M il 100 100 V V Continuous Transient +20 ±30 V V '*n Tc = 25° C MOSFET chip capability External lead (current limit)	OCR Scan	180n10 isoplus247tm cto150	PDF
180N10 Abstract: IXFN 180N10 SOT-227 Package 125OC IXFN180N10 Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	180n10 ot-227 e153432 125oc +3ixfn 180n10 sot-227 package ixfn180n10	PDF
Tf 227 Contextual Info: Advanced Technical Information IXFN 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V	Original	180n10 ot-227 e153432 tf 227	PDF
IXFN180N10 Abstract: ISOPLUS-227 180N10 Contextual Info: IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	180n10 227tm ixfn180n10 728b1 +1isoplus-227	PDF
180N103 Contextual Info: 180N103 AC-DC 180Watts Single output power supply Ver.0 FEATURES ● Applications:POSPoE、Industry ● High Efficiency ● ZVS technology to reduce power dissipation ● Protections:OVP、OCP、SCP Recovery ● Active:PFC ● MTBF > 300,000 hours at 25℃ full load	Original	180n103 180watts 2x127x35 264vac +3115vac 60amp 120vac	PDF
180n10 Abstract: IXFK 180N10 Contextual Info: HiPerFETTM Power MOSFETs IXFK 180N10 IXFX 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100	Original	o-264 180n10 100khz 125oc +1ixfk 180n10	PDF
180N10 Contextual Info: HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 V A 8 mW Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	180n10 isoplus247tm 247tm	PDF
180n10 Abstract: 125OC Contextual Info: HiPerFETTM Power MOSFETs IXFK 180N10 IXFX 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100	Original	180n10 247tm 125oc	PDF

Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 ID25 = 100 V = 180 A 8 mQ DS on Single MOSFET Die trr < 250 ns » Maximum Ratings PLUS247™ Symbol Test Conditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i	OCR Scan	180n10 plus247	PDF
Contextual Info: IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 Single M O S FE T D ie Symbol Test Conditions v T j DSS 100 100 V V Continuous Transient i20 i30 V V T0 = 25° C MOSFET chip capability External lead (current limit) Tc =25°C, Notel	OCR Scan	180n10 247tm cto150 o-264	PDF
IXFN 180N10 Abstract: 180n10 Contextual Info: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)	Original	180n10 ot-227 100khz 125oc +1ixfn 180n10	PDF
STH180N10F3-2 Abstract: 180N10F3 STH180N10 180n10 14933 01-Aug-2008 STP180N10F3 Contextual Info: 180N10F3-2 180N10F3 N-channel 100 V, 3.2 mΩ, 180 A STripFET Power MOSFET H2PAK, TO-220 Features Type VDSS RDS on max. ID 180N10F3-2 100 V 4 mΩ 180 A 180N10F3 100 V 4.8 mΩ 120 A 2 3 3 • Ultra low on-resistance ■ 100% avalanche tested	Original	sth180n10f3-2 stp180n10f3 o-220 180n10f3 +4sth180n10 180n10 14933 01-aug-2008	PDF
180N10N Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipp180n10n3 ipi180n10n3 o-263 iec61249-2-21 +7pg-to220-3 pg-to262-3 180n10n jesd22 marking d33 ipp180n10n3g ipi180n10n3 g	PDF
STH180N10F3-2 Abstract: sth180n10f3 STH180N10 Contextual Info: 180N10F3-2 N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2 STripFET III Power MOSFET Features Order codes VDSS RDS on max. ID 180N10F3-2 100 V 4.5 mΩ 180 A • Ultra low on-resistance ■ 100% avalanche tested TAB 2 Applications ■ 3 1 H2PAK-2 High current switching applications	Original	sth180n10f3-2 sc06140 180n10f3 sth180n10fin +2sth180n10f3 sth180n10	PDF
Contextual Info: Ordering number : EN*A2285 180N10B Advance Information http://onsemi.com Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features • Ultra Low On-Resistance • Low Gate Charge • Pb-free and RoHS Compliance • High Speed Switching • 100% Avalanche Tested	Original	a2285 ndpl180n10b a2285-5/5	PDF
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	isoplus247tm plus247tm-package fbo16-08n fbe22-06n1 +1421-05qc 22-08n 75-01f 21-08i01 transistor 12n60c 12n60c equivalent 30n120d1 13n50 equivalent 12n60c mosfet 1200v 30a mosfet 1000v 30a 30n120d cs20-22mof1 12n60c mosfet	PDF
180N10N Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3 Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipp180n10n3 ipi180n10n3 o-263 pg-to220-3 +5pg-to262-3 180n10n jesd22 d33 marking 180n10	PDF
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	isoplus220tm us247tm 247tm isoplus22rm +15isoplus227tm ixfe180n10 ixfe73n30q ixfe48n50q ixfe48n50qd2 12n60c equivalent 13n50 equivalent equivalent of igbt 12n60c motor ig 2200 19 ixlf 19n250a 24n60cd1 19n250 32n50 004ii 27n80q	PDF

180N10 Search Results

180N10 Price and Stock

Infineon Technologies AG IPB180N10S402ATMA1

Infineon Technologies AG IPP180N10N3GXKSA1

STMicroelectronics STH180N10F3-2

Infineon Technologies AG IPD180N10N3GBTMA1

Infineon Technologies AG IAUA180N10S5N029AUMA1

180N10 Datasheets Context Search

180N10

180N10

180N10

Tf 227

IXFN180N10

180N103

180n10

180N10

180n10

IXFN 180N10

STH180N10F3-2

180N10N

STH180N10F3-2

transistor 12n60c

180N10N

12N60c equivalent