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    180N10N Search Results

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    180N10N Price and Stock

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    Infineon Technologies AG IPD180N10N3GATMA1

    MOSFET N-CH 100V 43A TO252-3
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    DigiKey () IPD180N10N3GATMA1 Tape & Reel 3,033 2,500
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    IPD180N10N3GATMA1 Digi-Reel 3,033 1
    • 1 $1.87
    • 10 $1.19
    • 100 $0.80
    • 1000 $0.58
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    IPD180N10N3GATMA1 Cut Tape 533 1
    • 1 $1.87
    • 10 $1.19
    • 100 $0.80
    • 1000 $0.58
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    Avnet Americas IPD180N10N3GATMA1 Tape & Reel 8 Weeks 2,500
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    Mouser Electronics () IPD180N10N3GATMA1 6,782
    • 1 $2.12
    • 10 $1.33
    • 100 $0.88
    • 1000 $0.62
    • 10000 $0.53
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    IPD180N10N3GATMA1 6,752
    • 1 $2.03
    • 10 $0.88
    • 100 $0.66
    • 1000 $0.55
    • 10000 $0.51
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    Bristol Electronics IPD180N10N3GATMA1 324
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    Rochester Electronics IPD180N10N3GATMA1 11,202 1
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    • 100 $0.59
    • 1000 $0.49
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    TME IPD180N10N3GATMA1 2,500
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    EBV Elektronik IPD180N10N3GATMA1 2,500 9 Weeks 2,500
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    Rochester Electronics LLC IPA180N10N3GXKSA1

    28A, 100V, 0.018OHM, N-CHANNEL,
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    DigiKey IPA180N10N3GXKSA1 Bulk 791 272
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    • 1000 $1.10
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    Infineon Technologies AG IPI180N10N3GXKSA1

    MOSFET N-CH 100V 43A TO262-3
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    DigiKey IPI180N10N3GXKSA1 Tube 500
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    Rochester Electronics IPI180N10N3GXKSA1 6,050 1
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    • 100 $0.97
    • 1000 $0.81
    • 10000 $0.72
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    TME IPI180N10N3GXKSA1 459 1
    • 1 $1.35
    • 10 $1.17
    • 100 $0.94
    • 1000 $0.76
    • 10000 $0.76
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    Vyrian IPI180N10N3GXKSA1 8,721
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    Infineon Technologies AG IPD180N10N3GBTMA1

    MOSFET N-CH 100V 43A TO252-3
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    DigiKey IPD180N10N3GBTMA1 Tape & Reel
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    Avnet Americas IPD180N10N3GBTMA1 Tape & Reel 2,500
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    Vyrian IPD180N10N3GBTMA1 10,837
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    Infineon Technologies AG IPP180N10N3GXKSA1

    MOSFET N-CH 100V 43A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPP180N10N3GXKSA1 Tube 1
    • 1 $2.42
    • 10 $2.42
    • 100 $1.05
    • 1000 $0.77
    • 10000 $0.62
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    Avnet Americas IPP180N10N3GXKSA1 Tube 494 35 Weeks 50
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    • 100 $0.61
    • 1000 $0.52
    • 10000 $0.52
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    Mouser Electronics () IPP180N10N3GXKSA1 1,831
    • 1 $2.10
    • 10 $1.33
    • 100 $0.90
    • 1000 $0.66
    • 10000 $0.58
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    IPP180N10N3GXKSA1
    • 1 $2.58
    • 10 $1.64
    • 100 $1.11
    • 1000 $0.80
    • 10000 $0.65
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    Newark IPP180N10N3GXKSA1 Bulk 1
    • 1 $1.57
    • 10 $1.41
    • 100 $1.11
    • 1000 $0.72
    • 10000 $0.61
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    TME IPP180N10N3GXKSA1 1
    • 1 $1.03
    • 10 $1.03
    • 100 $0.72
    • 1000 $0.72
    • 10000 $0.72
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    EBV Elektronik IPP180N10N3GXKSA1 500 36 Weeks 500
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    Find more 180N10N price and stock on Findchips.com

    180N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    180N10N

    Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G
    Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP180N10N3 IPI180N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO262-3 180N10N 180N10N IEC61249-2-21 JESD22 PG-TO220-3 marking D33 IPP180N10N3G IPI180N10N3 G PDF

    180N10N

    Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3
    Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP180N10N3 IPI180N10N3 O-263 PG-TO220-3 PG-TO262-3 180N10N 180N10N JESD22 PG-TO220-3 d33 marking 180N10 PDF

    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 18 mW ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA180N10N3 PG-TO220-FP 180N10N PDF

    DIODE D28

    Abstract: d28 diode 180n10n JESD22 DD-50 IPA180N10N3
    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 18 mΩ ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA180N10N3 PG-TO220-FP 180N10N DIODE D28 d28 diode 180n10n JESD22 DD-50 PDF

    180N10N

    Abstract: 180n10 JESD22 d33 marking
    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPD180N10N3 O-263 PG-TO252-3 180N10N 180N10N 180n10 JESD22 d33 marking PDF

    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max TO-263 18 mW ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPD180N10N3 O-263 IEC61249-2-21 PG-TO252-3 180N10N PDF