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    180N10N Price and Stock

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    Infineon Technologies AG IPD180N10N3GATMA1

    MOSFET N-CH 100V 43A TO252-3
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    DigiKey () IPD180N10N3GATMA1 Digi-Reel 3,651 1
    • 1 $0.90
    • 10 $0.74
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    IPD180N10N3GATMA1 Cut Tape 3,651 1
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    IPD180N10N3GATMA1 Reel 2,500 2,500
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    Avnet Americas IPD180N10N3GATMA1 Reel 16 Weeks 2,500
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    Mouser Electronics IPD180N10N3GATMA1 8,436
    • 1 $1.02
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    Bristol Electronics IPD180N10N3GATMA1 324
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    Rochester Electronics IPD180N10N3GATMA1 11,202 1
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    • 100 $0.57
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    Chip One Stop IPD180N10N3GATMA1 Cut Tape 1,893 0 Weeks, 1 Days 5
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    EBV Elektronik IPD180N10N3GATMA1 17 Weeks 2,500
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    Infineon Technologies AG IPP180N10N3GXKSA1

    MOSFET N-CH 100V 43A TO220-3
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    DigiKey IPP180N10N3GXKSA1 Tube 507 1
    • 1 $0.95
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    Avnet Americas IPP180N10N3GXKSA1 Tube 1,896 16 Weeks 1
    • 1 $0.36
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    Mouser Electronics IPP180N10N3GXKSA1 507
    • 1 $0.78
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    Newark IPP180N10N3GXKSA1 Bulk 1,391 1
    • 1 $1.44
    • 10 $1.01
    • 100 $0.79
    • 1000 $0.54
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    Rochester Electronics IPP180N10N3GXKSA1 11,441 1
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    TME IPP180N10N3GXKSA1 10 1
    • 1 $1.06
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    • 100 $0.88
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    EBV Elektronik IPP180N10N3GXKSA1 17 Weeks 500
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    Rochester Electronics LLC IPA180N10N3GXKSA1

    28A, 100V, 0.018OHM, N-CHANNEL,
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    DigiKey IPA180N10N3GXKSA1 Bulk 327
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    • 1000 $0.92
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    Infineon Technologies AG IPA180N10N3GXKSA1

    MOSFET N-CH 100V 28A TO220-FP
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    DigiKey IPA180N10N3GXKSA1 Tube
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    Rochester Electronics IPA180N10N3GXKSA1 5,369 1
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    • 100 $0.88
    • 1000 $0.73
    • 10000 $0.65
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    Infineon Technologies AG IPD180N10N3GBTMA1

    MOSFET N-CH 100V 43A TO252-3
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    DigiKey () IPD180N10N3GBTMA1 Reel
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    Avnet Americas IPD180N10N3GBTMA1 Reel 2,500
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    Vyrian IPD180N10N3GBTMA1 988
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    180N10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    180N10N

    Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G
    Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP180N10N3 IPI180N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO262-3 180N10N 180N10N IEC61249-2-21 JESD22 PG-TO220-3 marking D33 IPP180N10N3G IPI180N10N3 G PDF

    180N10N

    Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3
    Contextual Info: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPP180N10N3 IPI180N10N3 O-263 PG-TO220-3 PG-TO262-3 180N10N 180N10N JESD22 PG-TO220-3 d33 marking 180N10 PDF

    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 18 mW ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant


    Original     		IPA180N10N3 PG-TO220-FP 180N10N PDF

    DIODE D28

    Abstract: d28 diode 180n10n JESD22 DD-50 IPA180N10N3
    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 18 mΩ ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPA180N10N3 PG-TO220-FP 180N10N DIODE D28 d28 diode 180n10n JESD22 DD-50 PDF

    180N10N

    Abstract: 180n10 JESD22 d33 marking
    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPD180N10N3 O-263 PG-TO252-3 180N10N 180N10N 180n10 JESD22 d33 marking PDF

    Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max TO-263 18 mW ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPD180N10N3 O-263 IEC61249-2-21 PG-TO252-3 180N10N PDF