180N10N Search Results
180N10N Price and Stock
Infineon Technologies AG IPD180N10N3GATMA1MOSFET N-CH 100V 43A TO252-3 |
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IPD180N10N3GATMA1 | Digi-Reel | 1,729 | 1 |
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IPD180N10N3GATMA1 | Reel | 26 Weeks | 2,500 |
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IPD180N10N3GATMA1 | 4,314 |
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IPD180N10N3GATMA1 | 324 |
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IPD180N10N3GATMA1 | 11,202 | 1 |
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IPD180N10N3GATMA1 | 7,500 | 2,500 |
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IPD180N10N3GATMA1 | 2,500 | 2,500 |
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Infineon Technologies AG IPP180N10N3GXKSA1MOSFET N-CH 100V 43A TO220-3 |
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IPP180N10N3GXKSA1 | Tube | 4 | 1 |
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IPP180N10N3GXKSA1 | Tube | 1,896 | 16 Weeks | 1 |
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IPP180N10N3GXKSA1 | 337 |
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IPP180N10N3GXKSA1 | Bulk | 1,372 | 1 |
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IPP180N10N3GXKSA1 | 11,441 | 1 |
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IPP180N10N3GXKSA1 | 1 |
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IPP180N10N3GXKSA1 | 500 |
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Infineon Technologies AG IPA180N10N3GXKSA1MOSFET N-CH 100V 28A TO220-FP |
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IPA180N10N3GXKSA1 | Tube |
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IPA180N10N3GXKSA1 | 5,369 | 1 |
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Infineon Technologies AG IPI180N10N3GXKSA1MOSFET N-CH 100V 43A TO262-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI180N10N3GXKSA1 | Tube | 500 |
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IPI180N10N3GXKSA1 | 6,050 | 1 |
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IPI180N10N3GXKSA1 | 478 | 1 |
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Infineon Technologies AG IPD180N10N3GBTMA1MOSFET N-CH 100V 43A TO252-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD180N10N3GBTMA1 | Reel |
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IPD180N10N3GBTMA1 | Reel | 2,500 |
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IPD180N10N3GBTMA1 | 988 |
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180N10N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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180N10N
Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G
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IPP180N10N3 IPI180N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO262-3 180N10N 180N10N IEC61249-2-21 JESD22 PG-TO220-3 marking D33 IPP180N10N3G IPI180N10N3 G | |
180N10N
Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3
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IPP180N10N3 IPI180N10N3 O-263 PG-TO220-3 PG-TO262-3 180N10N 180N10N JESD22 PG-TO220-3 d33 marking 180N10 | |
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Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 18 mW ID 28 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant |
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IPA180N10N3 PG-TO220-FP 180N10N | |
DIODE D28
Abstract: d28 diode 180n10n JESD22 DD-50 IPA180N10N3
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IPA180N10N3 PG-TO220-FP 180N10N DIODE D28 d28 diode 180n10n JESD22 DD-50 | |
180N10N
Abstract: 180n10 JESD22 d33 marking
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IPD180N10N3 O-263 PG-TO252-3 180N10N 180N10N 180n10 JESD22 d33 marking | |
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Contextual Info: 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max TO-263 18 mW ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature |
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IPD180N10N3 O-263 IEC61249-2-21 PG-TO252-3 180N10N |