STP3N50XI Search Results

Contextual Info: STP3N50XI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.7# I(DM) Max. (A) Pulsed I(D)1.1 @Temp (øC)100# IDM Max (@25øC Amb)6.8 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)

SGS ISOWATT221

Abstract: STP3N50XI D556 ISOWATT221
Contextual Info: • OOMLilbb MÖ7 ■ S G T H _ _ rz7 sgs-ihomson Ä T f «[R3 M £Tr^MD S STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N50XI ■ . . ■ . Vdss RDS(on 500 V <4 n Id 1.7 A TYPICAL RDS(on) = 2.5 £2 AVALANCHE RUGGED TEC HNO LO GY

GC2269

Contextual Info: SGS-THOMSON STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 50XI . . • . . V dss RoS on Id 500 V 4 il 1,7 A AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLICATION O RIENTED CHARACTERIZATION

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000