STP33N1O Search Results

Contextual Info: 712^237 D04b441 êST « S f i T H SCS-THOMSON iGÄ¥^@iO £S STP33N10 STP33N1OFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP33N 10 S TP33N 10FI • . . ■ ■ . . ■ V d ss RDS(on Id 100 V 100 V < 0 .0 6 £2 < 0 .0 6 n 33 A 18 A TYPICAL R D S (o n ) = 0.045 £i

33N10

Abstract: SGS Transistor
Contextual Info: STP33N1o STP33N10FI SGS-THOMSON iLü «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N 10 STP33N 10FI V dss RDS on Id 100 V 0 .0 6 L i 33 A 100 V 0 .0 6 a 18 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C