STP33N10FI Search Results

33n10

Abstract: DD 127 D
Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP33N 10 S T P 3 3 N 1 0FI . . . . . . . . V dss RDS on Id 100 V 100 V < 0 .0 6 Q. < 0 .0 6 Q. 33 A 18 A TYPICAL R DS(on) = 0.045 Q. AVALANCHE RUGGED TECHNOLOGY

33N10

Abstract: SGS Transistor
Contextual Info: STP33N1o STP33N10FI SGS-THOMSON iLü «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N 10 STP33N 10FI V dss RDS on Id 100 V 0 .0 6 L i 33 A 100 V 0 .0 6 a 18 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

STP33N10

Abstract: STP33N10FI 3318A
Contextual Info: STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI VDSS R DS on ID 100 V 100 V < 0.06 Ω < 0.06 Ω 33 A 18 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STP33N10

Abstract: STP33N10FI
Contextual Info: STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V 100 V < 0.06 Ω < 0.06 Ω 33 A 18 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP33N10

Abstract: STP33N10FI
Contextual Info: STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.06 Ω < 0.06 Ω 33 A 18 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: 712^237 D04b441 êST « S f i T H SCS-THOMSON iGÄ¥^@iO £S STP33N10 STP33N1OFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP33N 10 S TP33N 10FI • . . ■ ■ . . ■ V d ss RDS(on Id 100 V 100 V < 0 .0 6 £2 < 0 .0 6 n 33 A 18 A TYPICAL R D S (o n ) = 0.045 £i

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509