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STMicroelectronics STP6N60M2 - Rail/Tube (Alt: STP6N60M2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STP6N60M2	Tube		66 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	STP6N60M2	Bulk			1	1 $2.21 10 $1.27 100 $1.14 1000 $0.90 10000 $0.83	Buy Now
STMicroelectronics	STP6N60M2				1	1 $2.00 10 $1.06 100 $0.93 1000 $0.75 10000 $0.75	Buy Now
TME	STP6N60M2		66		1	1 $1.99 10 $1.28 100 $1.04 1000 $1.04 10000 $1.04	Buy Now
ComSIT USA	STP6N60M2		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	STP6N60M2			25 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STP6N60M2			25 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics MTP6N60 Trans MOSFET N-CH Si 600V 6A 3-Pin(3+Tab) TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP6N60		141			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Motorola Semiconductor Products MTP6N60E Trans MOSFET N-CH Si 600V 6A 3-Pin(3+Tab) TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MTP6N60E		16			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STP6N60FP IN STOCK SHIP TODAY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Component Electronics, Inc	STP6N60FP		50			1 - 10 - 100 - 1000 - 10000 -	Buy Now

TP6N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TP6N60 Abstract: MTP6N6 Contextual Info: S G S -T H O M S O N ;L [iO T ô « S M T P 6 N 60 _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 . • . . V d ss RDS(on I Id 600 V 1.2 fi I 6.8 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	tp6n60 mtp6n60 mtp6n6	PDF
TP6N60 Contextual Info: MOTOROLA Order this document by TP6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6N60E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n	OCR Scan	mtp6n60e/d tp6n60e 21a-09 tp6n60	PDF
TP6N60 Abstract: 6N60 Contextual Info: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	tp6n60 6n60	PDF
P6N60 Abstract: p6n55 tp6n55 6N55 MTP6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60 Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 55 M T P 6N 60 P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S P ow er FETs are designed fo r h ig h voltag e , high speed p o w e r s w itc h in g a pp licatio n s such as sw itch in g regu la to rs,	OCR Scan	mtp6n55 p6n60 p6n55 tp6n55 +66n55 tp6n60 sith 6n55 data mtp6n6 power mosfet 6n60	PDF
TP8N10 Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40 Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI	OCR Scan	2sk295 2sk296 2sk308 2sk310 +162sk311 2sk312 2sk313 2sk319 2sk320 2sk324 tp8n10 th15n20 th7n50 tp4n10 tp10n05 irfp350fi tp5n35 tp5n40 tp4n45 tp3n40	PDF
MTM13N50E Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”	OCR Scan	buz10 buz11 buz11a buz11s2 +16buz15 buz171 buz20 buz21 buz23 buz31 mtm13n50e p40n10 24n40 p50n05 8n50e power mosfet cross reference guide motorola 20n50e tp50n05e irf510 mosfet irf640 33n10e	PDF
6N60E Abstract: p6n60e TP6N60E Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 60E TM O S E -F E T ™ P o w er Field E ffe c t T ran sistor M otorola P referred Device N-Channel Enhancement-Mode Silicon G te TMOS POWER FET 6.0 AMPERES 600 VOLTS ^DS on * 1.2 OHMS	OCR Scan	mtp6n60e 6n60e p6n60e tp6n60e	PDF