IGBT 500V 35A Search Results

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Contextual Info: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance

G20N50c

Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
Contextual Info: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE

PJ 969 diode

Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Contextual Info: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode

MSK4351

Abstract: three phase IGBT Bridge driving ic
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 50 Amp Capability at 110°C Fully Isolated Bridge

P channel 50A IGBT

Abstract: MSK4351 use igbt for 3 phase induction motor
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 50 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4351 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED 500V, 50 Amp Capability at 110°C

PJ 969 diode

Abstract: DIODE 25PH 500 M302E71 pj 809 HGTG20N50C1D 08/bup 3110 transistor
Contextual Info: HARRIS SEMICOND SECTOR ffl j a r s 1 bêE D • Lt30SE71 00502Ö3 732 ■ H A S HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 20 Amp, 500 Volt • Latch Free Operation

IGBT 500V 35A

Abstract: 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit Current tail time of IGBT dodge IGBT structure
Contextual Info: Technology to the Next Power Application Note APT0408 IGBT Technical Overview Distinguishing Features Application Tips Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 29 November 2004 TECHNOLOGY TO THE NEXT POWER 1 What is an IGBT?

stepper motor driver full bridge 6A

Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
Contextual Info: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

MOSFET 1000v 30a

Abstract: W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60
Contextual Info: WELDING STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Primary Secondary Inverter RECOMMENDED DEVICES MAIN FEATURES Mains BF3506TV / BF3510TV BHA/K3012TV MSSxx / MDSxx BTW68-xxx / BTW69-xxx Input Rect. Bridge - 600V/35A; 1000V/35A Input Rect. Bridge - 1200V/30A 3-ph.

5000watt

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Sensitron Semiconductor

Abstract: 210C DS34C87 SFH6186-4 SPM6G060-120D SPM6G060-120D-B
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.3 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IC53A

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Contextual Info: htemational Preliminary Data Sheet PD - 5.030 [^Rectifier CPU165MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features • Short Circuit Rated - 10ps @ 125°C, V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail" losses

IGBT 500V 35A

Abstract: diode C407 IGBT tail time C408 diode transistor C408 c407 diode 600V 25A Ultrafast Diode DATA SHEET OF IGBT CPU165MM
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

IGBT 1500v 50A

Abstract: OM9369SF BLDC delta wye control
Contextual Info: Preliminary Data Sheet OM9369SF FULL-FEATURED, ‘SMART-POWER’ MODULE FOR HIGH-VOLTAGE DIRECT DRIVE OF 3-PHASE BRUSHLESS DC MOTORS 50 Amp, Push-Pull, Smart-Power Hybrid Commutates, Controls, And Directly Drives q BLDC Motors High-Voltage, High-Power 3q FEATURES

IGBT 500V 35A

Abstract: diode C407 C408 diode CPU165MM IGBT tail time
Contextual Info: Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
Contextual Info: S E M I C O N D U C T O R HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR

Contextual Info: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.

IGBT 500V 35A

Abstract: CPU165MM 100V 35A igbt
Contextual Info: International 1*»]Rectifier Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 1 0ps @ 125°C, V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

Contextual Info: IGBT 7.5 kW 400 V •回路図 CIRCUIT PVD75-12 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 質量 Approximate Weight：400ｇ ■最大定格 Maximum Ratings（TC＝25℃） 種類 Type 3 Phase Rectification Diode Switch Thyristor