ID104 Search Results

120N25

Abstract: ID104
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

100N25

Abstract: ID104
Contextual Info: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM

Contextual Info: DIGITRON SEMICONDUCTORS ID100-ID106 SILICON CONTROLLED RECTIFIER 0.5 AMP Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient

1d105

Abstract: unitrode Applications Note 1D100 100S ID100 ID103 ID104 ID105 ID106 unitrode op 02
Contextual Info: ID100-ID106 SCRs .5 Amp, Planar FEA TU RES • Voltage R a tin g s: to 400V • M axim um Gate T rigg er C u rre n t: 200/iA • H e rm e tically S e aled TO-18 M etal Can • P lan ar P assiv ate d C o n stru ction D ESCR IPTIO N T h is Data S h e e t d e sc rib e s U n itro d e's lin e of h e rm e tic a lly se ale d in d u stria l S C R s

Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

120N20

Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

TE 555-1

Abstract: 419 on 80 GA201A 2n3031 2n2031
Contextual Info: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 JAN2N3031 JANTX2N3028

Contextual Info: IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 300 V = 90 A Ω = 33 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous

ID104

Abstract: IXFX
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200

Contextual Info: SCRs ID100-ID106 .5 Amp, Planar FEA TU RES • Voltage R ating s: to 400V • Maximum Gate Trigger Curren t: 200,«A • H erm etically Sealed TO-18 Metal Can • Plan ar Passivated Construction DESCRIPTION This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs

120N20

Abstract: motor IG 2200 19 125OC ID104
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

100N25

Contextual Info: Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient

1485C-P1-C150

Abstract: 1485T-P2T5-T5 DCA1-5C10 ISD 1720 1485TP2T5T5 JW50DN2 devicenet tap 1485C-P1A50 DCN1-3C Weidmuller plc
Contextual Info: Version 1.1 Produced in April, 2002 Sharp Programmable Controller NEW Satellite JW50H/70H/100H Model name DeviceNet Master Module User's Manual JW-50DN Thank you for purchasing this DeviceNet master module, the JW-50DN for use with the JW50H/70H/ 100H programmable controller.

Contextual Info: APT20M20JLL 200V 104A 0.020Ω POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A = 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 200 200

120n20

Abstract: ID104
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

ID101 Unitrode

Contextual Info: SCRs ID100-ID106 .5 Amp, Planar F EA T U RE S • Voltage Ratings: to 400V • Maxim um Gate Trigger Current: 200/iA • Hermetically Sealed TO-18 Metal Can • Planar Passivated Construction D E S C R IP T IO N T h is Data Sheet describes Unitrode’s line of hermetically sealed industrial S C R s

Q6012LH2

Abstract: mw 137 600g shindengen cf 318 rca thyristor manual SCR TAG 665 600 triac mw 137 600G SCR Handbook, rca motorola triac mac635-8 triac tag 252 600 S106D1
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE Power Switching Semiconductor Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

APT20M20JLL

Contextual Info: APT20M20JLL 200V 104A 0.020Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT20M20JFLL

Contextual Info: APT20M20JFLL 200V 104A 0.020Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON ® and Qg. Power MOS 7 combines lower conduction and switching losses

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06