HY57V653220BTC Search Results

Contextual Info: HY57V653220BTC-I 2Mx32-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION Th e Hy n i x H Y 5 7 V 6 5 3 2 2 0 B is a 67, 1 0 8 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , i de a l l y s ui t ed f or t he which r e q u i re l ow p o w e r c o n s u m p t i o n and e x t e n d e d t e m p e r a t u r e r an g e . H Y 5 7 V 6 5 3 2 2 0 B

Contextual Info: HY57V653220BTC 2Mx32-bit, 4K Ret, 4Banks, 3.3V DESCRIPTION T h e Hy n i x H Y 5 7 V 6 5 3 2 2 0 B i s a 6 7 , 1 0 8 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e m e m o r y a p p l i c a t i o n s w h i c h r e q u i r e w i d e d a t a I / O a n d h i gh b a n d w i d t h . H Y 5 7 V 6 5 3 2 2 0 B is o r g a n i z e d as 4 b a n k s of 5 2 4 , 2 8 8 x 3 2 .

k4s643232f

Abstract: KS RMII Reduced MII aa2c "routing tables"
Contextual Info: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks

TCXO A31 10MHZ

Abstract: MT48LC4M32B2TG-6 L1V16 Datum OCXO
Contextual Info: PRELIMINARY PRODUCT BRIEF: SUBJECT TO CHANGE Rev: 091407 DS34S108, DS34S104, DS34S102, DS34S101 Description Abridged General Description Features The IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC draft-compliant DS34S108 allows up to eight T1/E1 links or frame-based serial HDLC links to be

HY57V653220C

Contextual Info: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

Contextual Info: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial

4mx16

Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part

HY57V653220B

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

HY57V653220B

Abstract: HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-7 HY57V653220BTC-8
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

TXC-06010-MB

Abstract: TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk
Contextual Info:  PacketTrunk-4 Plus Device TDMoIP/MPLS Gateway Device TXC-06010 DATA SHEET PRODUCT PREVIEW TXC-06010-MB, Ed. 2 June 2006 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII; HDX or

Contextual Info: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial

1gb pc133 SDRAM DIMM 144pin

Abstract: 54-PIN PC100 gm72v66841
Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh

Contextual Info: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3/STS-1 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks

CDBM c28

Abstract: U93 QUANTA QUANTA U93 AIC-7899W BC-1072 BC1008 R6549 GEVENT12 24X4 C1152
Contextual Info: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Foster/ Prestonia CPU Foster/ Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4)

M28N-2

Abstract: CDBM c28 U93 QUANTA QUANTA U93 BC1008 N25 3KV SEC U891 b30 c300 - 1 RN5101 C1254
Contextual Info: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Prestonia CPU Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4) 533MHz(133MHz x 4)

gmZ4S

Abstract: 5400 samsung lcd monitor circuit diagram C0012-DSR-01C gmZ4U hyundai L19 MC141584 genesis lcd controller dram FSDATA45 lg crt monitor circuit diagram GM72V161621ET
Contextual Info: DATA SHEET gmZ4 C0012-DAT-01C July 2000 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 2150 Gold Street, Alviso, CA USA 95002 Tel: (408) 262-6599 Fax: (408) 262-6365 www.genesis-microchip.com / info@genesis-microchip.on.ca

HY57V653220BTC-7

Abstract: HY57V653220B HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-8
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

Contextual Info: HY57V653220B 4 B a n k s x 5 1 2 K x 3 2 B it S y n c h r o n o u s D R A M DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

RFC-5087

Abstract: TXC-06010AIBG TXC-06010-MB K4S283232E 0X0076 cesopsn TXC-06010
Contextual Info: PacketTrunk-4 Plus Device TDM-over-Packet Gateway Device TXC-06010 DATA SHEET PRELIMINARY TXC-06010- MB, Ed. 6 December 2009 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII;HDX or

HY57V653220

Abstract: HY57V653220B hy57v653220b-a
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

gmZ4S

Abstract: Genesis microchip dat gmZ4U MC141584 DSR-0012 HITACHI microcontroller 0xc0 genesis video controller gm72v161621et Genesis Microchip osd DAT-0012-B
Contextual Info: PRELIMINARY DATA SHEET gmZ4 DAT-0012-B December 1999 Genesis Microchip Inc. 165 Commerce Valley Dr. West, Thornhill, ON Canada L3T 7V8 Tel: 905 889-5400 Fax: (905) 889-0035 1871 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288

diode CH9d

Abstract: CH7C diode CH8C diode diode ch6b rg703 Diode TS21C diode code eb13 RFC-5087 10407C 2125S
Contextual Info: 19-4835; 8/09 DS34T101, DS34T102, DS34T104, DS34T108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial