HY57V Search Results

HY57V641620B

Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Contextual Info: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

HY57V281620A

Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
Contextual Info: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16

HY57V56820BT-H

Abstract: HY57V56820B HY57V56820BT-6 HY57V56820BT-K
Contextual Info: HY57V12820 L T 4 Banks x 16M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820B is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820B is organized as 4banks of 16,777,216x8.

HY57V561620T

Abstract: HY57V561620
Contextual Info: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V561620 is organized as 4 banks of

HY57V658020B

Abstract: HY57V658020BTC-10SI HY57V658020BTC-75I HY57V658020BTC-7I
Contextual Info: HY57V658020B 4 Banks x 2M x 8Bit Synchronous DRAM DESCRIPTION The Hynix HY57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V658020B is organized as 4banks of 2,097,152x8.

4 Banks x 1m x 32Bit Synchronous DRAM

Contextual Info: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added

Contextual Info: HY57V281620HC L/S T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16

HY57V161610D

Abstract: HY57V161610DTC-10I HY57V161610DTC-55I HY57V161610DTC-6I HY57V161610DTC-7I
Contextual Info: HY57V161610D 2 B a n k s x 5 1 2 K x 1 6 B it S y n c h r o n o u s D R A M DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of

Contextual Info: IC INFORMATION Function DRAM CMOS Type HY57V561620BLT-H Model AVIC-DRV150 VDD1 1 54 VSS3 DQ0 2 53 DQ15 VDDQ1 3 52 VSSQ4 DQ1 4 DQ2 5 VSSQ1 6 DQ3 7 DQ4 8 VDDQ2 9 DQ5 10 DQ6 11 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output

HY57V161610B

Contextual Info: C » « Y U H D f t P - - - - - - - - - - • H Y 57V 161610B 2 Banks x S12K X 16 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V161610B is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V161610B is organized as 2banks of

HYNIX HY57V641620HG

Abstract: 3clk HY57V641620HG
Contextual Info: HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16.

Contextual Info: HY57V561620B L T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.

HY57V161610E

Abstract: HY57V161610ET-10I HY57V161610ET-15I HY57V161610ET-55I HY57V161610ET-5I HY57V161610ET-6I HY57V161610ET-7I HY57V161610ET-8I HY57V161610ET-I
Contextual Info: HY57V161610ET-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.

HY57V281620HCT-HI

Abstract: HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
Contextual Info: HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16

4Mx8

Abstract: HY57V28820AT-H
Contextual Info: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range .HY57V28820A is organized as 4banks of

HY57V56820T

Contextual Info: HY57V56820 L T 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8.

HYNIX HY57V641620HG

Abstract: HY57V641620HG
Contextual Info: HY57V641620HG L TP 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG(L)TP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG(L)TP is organized as 4banks of 1,048,576x16.

HY57V561620

Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
Contextual Info: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.

0235

Contextual Info: HY57V64420HGTP 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HGTP is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64420HGTP is organized as 4banks of 4,194,304x4.

HY57V56820CT-6

Contextual Info: HY57V56820C L T 4 Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820C is organized as 4banks of 8,388,608x8.

Contextual Info: HY57V56420T 4Banks x 16M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V56420 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56420 is organized as 4 banks of

HY57V56820

Contextual Info: HY57V56820 L T 4Banks x 8M x 8Bit Synchronous DRAM DESCRIPTION The HY57V56820 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8.

HY57V161610ETP-5I

Abstract: HY57V161610ETP-7I HY57V161610E HY57V161610ETP-10I HY57V161610ETP-15I HY57V161610ETP-55I HY57V161610ETP-6I HY57V161610ETP-8I HY57V161610ETP-I HY57V161610ETP
Contextual Info: HY57V161610ETP-I 2 Banks x 512K x 16 Bit Synchronous DRAM DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.