3CLK Search Results

AS 15 -g

Abstract: LW2J
Contextual Info: TYPES SN54276, SN74276 QUADRUPLE J-K FLIP-FLOPS O C T O B E R 1 9 7 6 — R E V IS E D D E C E M B E R 1 9 8 3 features • Four J-K Flip-Flops in a Single Package . . . Can Reduce FF Package Count by 50% • Separate Negative-Edge-Triggered Clocks with Hysteresis , . . Typically 200 mV

TCM2912

Contextual Info: TCM129C13, TCM129C14, TCM129C16, TCM129C17, TCM29C13, TCM29C14, TCM29C16, TCM29C17 COMBINED SINGLE CHIP PCM CODEC AND FILTER D 2 7 6 5 . APRIL 1 9 8 6 -R E V IS E D JUNE 1 9 8 8 FEATURE TABLE Replaces Use of TC M 2910A in Tandem w ith TCM2912C FEATURE Reliable Silicon-Gate CMOS Technology

HY57V641620B

Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
Contextual Info: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: SN74LVTH322374 3.3ĆV ABT 32ĆBIT EDGEĆTRIGGERED DĆTYPE FLIPĆFLOP WITH 3ĆSTATE OUTPUTS SCBS754B − MARCH 2002 − REVISED SEPTEMBER 2003 D Member of the Texas Instruments D Bus Hold on Data Inputs Eliminates the Widebus+  Family Output Ports Have Equivalent 22-Ω Series

Contextual Info: SN74LVC32374A 32-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS www.ti.com SCES407A – JULY 2002 – REVISED MARCH 2005 • FEATURES • • • • • • Member of the Texas Instruments Widebus Family Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V

Contextual Info: SN74AUC32374 32-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS www.ti.com SCES475 – AUGUST 2003 – REVISED MAY 2005 FEATURES • • • • Member of the Texas Instruments Widebus+ Family Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal

A115-A

Abstract: C101 SN74ALVCH32374
Contextual Info: SN74ALVCH32374 32-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS SCES283B – OCTOBER 1999 – REVISED OCTOBER 2002 D D D D D D Member of the Texas Instruments Widebus+ Family Operates From 1.65 V to 3.6 V Max tpd of 4.2 ns at 3.3 V ±24 mA Output Drive at 3.3 V

AT49LD3200

Contextual Info: Features • 3.0V to 3.6V Read/Write • Burst Read Performance • • • • • • • • • • – <100 MHz RAS Latency = 2, CAS Latency = 6 , 10 ns Cycle Time tSAC = 7 ns – <75 MHz (RAS Latency = 2, CAS Latency = 5), 13 ns Cycle Time tSAC = 8 ns

MR27V3266D

Abstract: LA5A6
Contextual Info: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

TL 555c

Abstract: ym 3009 ic 4043B pes 5003 p type iii 16T MARKING 40 pin J004 4027B equivalent CD 40138 dax wax red 4013B
Contextual Info: MIL-M-38510/51E -MIL-M-38510/51D 22 Ja n u a ry 1980 M ILITARY SPEC IFIC A T IO N M IC RO CIRCU ITS, D IG IT A L , CMOS, FL IP - F L O P S AND LATCHES, MONOLITHIC SILIC O N T h is s p e c i f i c a t i o n 1s approved f o r use by a l l D e p a rt­ ments

cbc 327

Abstract: diagram wii remote CPRS CA20C03A WaCS CA20C03A-10 CA20C03W-5 CA20C03W-8 WD2001
Contextual Info: NEWBRIDGE niCROSYSTENS NEWBRIDGE MICROSYSTEMS t.ME D • LSññlO l 0D020E7 ■ NBflC CA20C03A & CA20C03W AUGUST 1993 DES ENCRYPTION PROCESSORS The CA20C03A is an improved version of the DES encryption processor designed by Newbridge Microsystems, while the CA20C03W

Contextual Info: SN74LVC32374A 32-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS SCES407A – JULY 2002 – REVISED SEPTEMBER 2003 D D D D D D D Member of the Texas Instruments Widebus  Family Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 4.5 ns at 3.3 V

Contextual Info: SN74LVTH32374ĆEP 3.3ĆV ABT 32ĆBIT EDGEĆTRIGGERED DĆTYPE FLIPĆFLOP WITH 3ĆSTATE OUTPUTS SCBS795 − DECEMBER 2003 D Controlled Baseline D D D D D Member of the Texas Instruments − One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing

Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

CD 2399 GP

Abstract: 80387 DX Users Manual Programmers Reference
Contextual Info: PRByBJOODOÂIfflr in t e i Intel486 DX MICROPROCESSOR 168-Pin Grid Array Package High Performance Design — RISC Integer Core with Frequent Instructions Executing in One Clock — 25 MHz, 33 MHz, and 50 MHz Clock — 80, 106, 160 Mbyte/sec Burst Bus — CHMOS IV and CHMOS V Process

Contextual Info: Intel386 EX EMBEDDED MICROPROCESSOR 1.0 INTRODUCTION The Intel386™ EXTB embedded processor operates at 20 or 25 MHz at 3 Volts nominal. The Intel386 EXTC embedded processor operates at 25 or 33 MHz at 5 Volts. In this datasheet, “Intel386 EX processor” refers to

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

iso 7816-4

Abstract: stm32f10x manual an2598 STM32F10x reference STM32F10x Flash Programming Reference Manual STM32F10xxx AN2598 STM32F10x ST8024 PB10 PB12
Contextual Info: AN2598 Application note Smartcard interface with the STM32F10x microcontrollers Introduction This document describes a firmware and hardware Smartcard interface solution based on the STM32F10x USART peripheral. The main purpose of this firmware and hardware

AK8817

Abstract: AK8817VG BT656
Contextual Info: ASAHI KASEI [AK8817] AK8817 NTSC/PAL Digital Video Encoder General Description The AK8817 is a Digital Video Encoder for Portable and Mobile application. ITU-R BT.601 level compatible Y, Cb,and Cr signals which correspond to 27MHz or square pixel are encoded into either NTSC or PAL compatible composite video signal.

HY57V281620A

Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
Contextual Info: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16

HYM71V32D755AT4

Abstract: HYM71V32D755AT4-8 HYM71V32D755AT4-P HYM71V32D755AT4-S
Contextual Info: 32Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 32Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V32D755AT4 Series DESCRIPTION The Hynix HYM71V32D755AT4 Series are 32Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 32Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 200pin

HYM71V8635ALT6-H

Abstract: HYM71V8635ALT6-K HYM71V8635AT6 HYM71V8635AT6-H HYM71V8635AT6-K
Contextual Info: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635AT6 Series DESCRIPTION The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

HYM7V73AC1601BTNGC-75

Contextual Info: 16Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 16Mx4 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73AC1601B N-Series DESCRIPTION The Hynix HYM7V73AC1601B N-Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of eighteen 16Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, three 18bits driver ICs