Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1MX16BIT Search Results

    1MX16BIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D012

    Abstract: KM416C1200A IC FOR SAMSUNG MINI COMPONENT KM416C1200AJ
    Contextual Info: KM M364C224A J DRAM MODULE K M M 364C 224A J Fast Page M ode 2Mx64 DRAM DIMM, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224AJ is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C224AJ consists of eight CMOS 1Mx16bit DRAMs in 44-pin SOJ 400mil packages


    OCR Scan
    M364C224A KMM364C224AJ 2Mx64 1Mx16bit 44-pin 400mil 48pin 168-pin D012 KM416C1200A IC FOR SAMSUNG MINI COMPONENT KM416C1200AJ PDF

    Contextual Info: DRAM MODULE KMM374F224CJ1 KMM374F224CJ1 EDO Mode without buffer 2M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F224CJ1 is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F224CJ1 consists of eight CMOS 1Mx16bits DRAMs


    Original
    KMM374F224CJ1 KMM374F224CJ1 1Mx16 2Mx72bits 1Mx16bits 400mil 300mil 168-pin PDF

    hy57v168010a

    Abstract: hy57v168010 HY57V164010 HY57V161610 400k5
    Contextual Info: 16Mbit Synchronous DRAM Series -HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan
    16Mbit HY57V164010, HY57V168010, HY57V161610 512Kbit HY57V164010- HY57V168010- 1SD10-03-NOV96 285ns hy57v168010a hy57v168010 HY57V164010 400k5 PDF

    Contextual Info: AVED MEMORY PRODUCTS AVED1F661LSDW AVED1F664LSDW Where Quality & Memory Merge FAST PAGE MODE with EDO 1MX64 DRAM DIMM, LOW POWER, without BUFFER, 1K & 4K REFRESH,3.3V DESCRIPTION PIN NAMES AVED Memory Products AVED1F66*LSDW 1,4 is a 1M bit x 64 Dynamic RAM high density memory module.


    Original
    AVED1F661LSDW AVED1F664LSDW 1MX64 AVED1F66 1Mx16bit 44-pin 400mil 144-pin PDF

    Contextual Info: AVED MEMORY PRODUCTS AVED1F321SDMW/LDMW AVED1F324SDMW/LDMW Where Quality & Memory Merge FAST PAGE MODE WITH EDO, 1MX32 DRAM DIMM, 1MX16, 1K & 4K REFRESH, 3.3V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED1F32*SDMW/LDMW 1,4 is a 1M bit x 32 Dynamic RAM high density memory module.


    Original
    AVED1F321SDMW/LDMW AVED1F324SDMW/LDMW 1MX32 1MX16, AVED1F32 1Mx16bit 44-pin 72-pin PDF

    LCD 16X2 5V RS232 Driver

    Abstract: DB9 connector to LCD interface lcd display 2x16 MCP2551 layout E2214 USB female Connector pcb layout DM9000E K6R4016V1D lpc interface sram 1Mb philips display 16x2
    Contextual Info: Introduction The LPC2294 and LPC2214 are based on a 16/32 bit ARM7TDMI-S CPU with real-time emulation and embedded trace support, together with 128/256 kilobytes kB of embedded high speed flash memory. A 128-bit wide memory interface and a unique accelerator architecture enable 32-bit


    Original
    LPC2294 LPC2214 128-bit 32-bit 16-bit 32-bit 10-bit RS232/UEXT) LCD 16X2 5V RS232 Driver DB9 connector to LCD interface lcd display 2x16 MCP2551 layout E2214 USB female Connector pcb layout DM9000E K6R4016V1D lpc interface sram 1Mb philips display 16x2 PDF

    PNX8550

    Abstract: PNX2015E PNX2015 running message display abstract TDA9975 car subwoofer amplifier schematic circuit diagram schematic diagram hdmi to scart transistor 23AG samsung colour tv kit circuit diagram infineon 128mb pc266
    Contextual Info: UM10113 User manual for the PNX2015 family Rev. 01 – 6 May 2005 User manual Document information Info Content Keywords TV810 platform, PNX8550, ATV, ATSC, Jaguar, HD subsystem, AVIP1, AVIP2, Columbus, TV microcontroller. Abstract This user manual provides a functional overview of PNX2015, together with detailed


    Original
    UM10113 PNX2015 TV810 PNX8550, PNX2015, PNX8550 PNX2015E running message display abstract TDA9975 car subwoofer amplifier schematic circuit diagram schematic diagram hdmi to scart transistor 23AG samsung colour tv kit circuit diagram infineon 128mb pc266 PDF

    EDI416S4030A

    Abstract: 1Mx16bits
    Contextual Info: EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM DESCRIPTION FEATURES  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 100, 83MHz  SDRAM CAS Latentency = 3 100MHz , 2 (83MHz)


    Original
    EDI416S4030A 1Mx16 83MHz 100MHz) 83MHz) EDI416S4030A EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks 1Mx16bits PDF

    ST ARM CORE 1825 0255

    Abstract: FRB connector D03 ML69Q6203 FRB connector 306122 0x78100000 highspeed usb dmx str 2062 3CLK BR 8550 D
    Contextual Info: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


    Original
    FJUL696201-04 ML696201/69Q6203 ARM946E-S 32bit speed30 ST ARM CORE 1825 0255 FRB connector D03 ML69Q6203 FRB connector 306122 0x78100000 highspeed usb dmx str 2062 3CLK BR 8550 D PDF

    Contextual Info: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,


    Original
    EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks 100MHz PDF

    KM416C1200AJ

    Abstract: km416c1200aj 7 hr5 connector RA5-ONLY KMM364C124A
    Contextual Info: KMM364C124AJ DRAM MODULE KMM 364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENERA L DESCRIPTION FEATURES The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124AJ consists of four CMOS


    OCR Scan
    KMM364C124 364C124AJ 1Mx64 1Mx16, KMM364C124AJ 1Mx16bit 44-pin 400mil 48pin KM416C1200AJ km416c1200aj 7 hr5 connector RA5-ONLY KMM364C124A PDF

    KS0174

    Abstract: ks0164 drum machine sound ic KS0174-2M KS0174-1M CTI Communication Techniques MPU-401 MPU401 KSO164 wavetable
    Contextual Info: ADVANCE INFORMATION KS0164 MULTIMEDIA AUDIO ¡QmniWave SYNTHESIZER The K S 0 1 6 4 Q m n iW a v e wavetable synthesizer chip represents the state-of-the-art in multimedia audio technology. Q m n iW a v e combines a high-quality 32voice wavetable synthesizer, a powerful 16-bit CPU,


    OCR Scan
    KS0164 KS0164 32-voice 16-bit MPU-401 16bit, MT-32 l-10nF) KSO164 KS0174 drum machine sound ic KS0174-2M KS0174-1M CTI Communication Techniques MPU401 KSO164 wavetable PDF

    samsung kmm5322204aw

    Abstract: km416c1204aj kmm5322204aw MFJ 224 km416c1204a 2MX32 EDO SIMM Samsung
    Contextual Info: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM G E N E R A L D E S C R IP T IO N FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynamic RAM high density m em ory m odule. The


    OCR Scan
    KMM5322204AW/AWG KMM5322204AW/AWG 2Mx32 1Mx16 KMM5322204AW 1Mx16bit 42-pin 72-pin samsung kmm5322204aw km416c1204aj MFJ 224 km416c1204a 2MX32 EDO SIMM Samsung PDF

    Contextual Info: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to


    Original
    72PIN 1Mx16 TS2MEDM326R TS2MEDM326R 32-bit 1Mx16-bit, PDF

    sot23 k04

    Abstract: rca cmos book Diode SD SJ14 honda connector 8 pin FTSH-120-01-F IDC3X2 C167 boot JUMPER Sim jumper SJ24 diode SJ27
    Contextual Info: ADSP-21161N EZ-KIT Lite Evaluation System Manual Revision 3.0, January 2005 Part Number 82-000530-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2005 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written


    Original
    ADSP-21161N LED10) sot23 k04 rca cmos book Diode SD SJ14 honda connector 8 pin FTSH-120-01-F IDC3X2 C167 boot JUMPER Sim jumper SJ24 diode SJ27 PDF

    Contextual Info: Preliminary KMM364C124BJ DRAM MODULE KMM364C124BJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C124BJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C124BJ consists of four CMOS


    OCR Scan
    KMM364C124BJ KMM364C124BJ 1Mx64 1Mx16, 1Mx16bit 42-pin 400mil 48pin PDF

    Contextual Info: KS0165 MULTIMEDIA AUDIO OVERVIEW The KS0165 wave table synthesizer with effect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The


    OCR Scan
    KS0165 KS0165 32-voice 16-bit MPU-401 16-bit, MPU-401 PDF

    IC 74142

    Abstract: KMM364E224BJ
    Contextual Info: Preliminary KMM364E224BJ DRAM MODULE KMM364E224BJ Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 1M x 16, 1K Refresh, 5V G EN ERA L DESCRIPTION FEATURES The Samsung KMM364E224BJ is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364E224BJ consists of eight CMOS


    OCR Scan
    KMM364E224BJ KMM364E224BJ 2Mx64 1Mx16bit 42-pin 400mil 48pin 168-pin IC 74142 PDF

    Contextual Info: KMM332V204AT-L KMM332V224AT-L DRAM MODULE KMM332V204AT-L / KMM332V224AT-L Fast Page Mode 2Mx32 DRAM DIMM, Low Pow er, 4K & 1K Refresh, 3.3V GENERAL FEATURES DESCRIPTIO N The Samsung KMM332V20 2 4AT is a 2M bit x 32 Dynamic RAM high density memory module. The


    OCR Scan
    KMM332V204AT-L KMM332V224AT-L KMM332V204AT-L KMM332V224AT-L 2Mx32 KMM332V20 1Mx16bit 44-pin 72-pin PDF

    Contextual Info: KMM364C224AJ DRAM MODULE KMM364C224AJ Fast Page Mode 2Mx64 DRAM DIMM, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224AJ is a 2M bit x 64 Dynamic RAM high density m em ory m odule. The • Performance Range: Samsung KMM364C224AJ consists of eight CMOS


    OCR Scan
    KMM364C224AJ KMM364C224AJ 2Mx64 1Mx16bit 44-pin 400mil 48pin 168-pin PDF

    ADQ37

    Contextual Info: KMM466F104BT1-L KMM466F124BT1-L DRAM MODULE KM M 466F104BT1-L & KMM466F124BT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F10 2 4BT-L is a 1Mx64bits Dynamic RAM high density memory module. The Samsung


    OCR Scan
    KMM466F104BT1-L KMM466F124BT1-L 466F104BT1-L KMM466F124BT1-L 1Mx16, KMM466F10 1Mx64bits 1Mx16bits 400mil ADQ37 PDF

    Contextual Info: DRAM MODULE KMM364E124AJ KMM364E124AJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V GEN ER AL DESCRIPTION FEATURES The Samsung KMM364E124AJ is a 1M bit x 64 • Part Identification - KMM364E124AJ 1024 cycles/16ms, SOJ • Fast Page with EDO Mode Operation


    OCR Scan
    KMM364E124AJ KMM364E124AJ 1Mx64 1Mx16, cycles/16ms, 1Mx16bit 42-pin PDF

    Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16,1K Refresh, 5V G E N E R A L DESCRIPTION FE A T U R E S The Samsung KMM 364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KM M 364C124AJ consists of four C M O S


    OCR Scan
    KMM364C124AJ KMM364C124AJ 1Mx64 1Mx16 364C124AJ 1Mx16bit 42-pin 400mil 48pin PDF

    Contextual Info: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The • Part Identification - KMM5321204AW 1024 cycles/16 ms Ref, SOJ, Solder


    OCR Scan
    KMM5321204AW/AWG KMM5321204AW/AWG 1Mx32 KMM5321204AW KMM5321204AW cycles/16 KMM5321204AWG 1Mx16bit PDF