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    1MX32BITS Search Results

    1MX32BITS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


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    m53210124ce2/cj21mx16m53210124c1mx32bits+31mx16bits42-pin72-pin PDF

    Contextual Info: KMM332F104BT-L KMM332F124BT-L DRAM MODULE KMM332F104BT-L & KMM332F124BT-L Fast Page with EDO Mode 1M x 32 DRAM SO DIM M using 1M X 16, 1K & 4K Ref., 3.3V, Low pow er/Self-R efresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F10 2 4BT is a 1Mx32bits Dynamic


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    kmm332f104bt-lkmm332f124bt-lkmm332f101mx32bits+4332f101mx16bits44-pin72-pin PDF

    Contextual Info: Preliminary M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


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    m53210124de2/dj21mx16m53210124d1mx32bits+31mx16bits42-pin72-pin PDF

    Contextual Info: HYM41V33100BTWG 1Mx32, 1Mx32 based, PC133 D E S C R I PT I ON The H ynix H Y M 4 V 3 3 10O BT W G CMOS Syn chronous DRAMs Series in 4 0 0 m i l are 1Mx32bits 86pin TSOP-II 0.1uF decoupling capacitors per each SDRAM The Hyundai H Y M 4 V 3 3 1OOBTWG memory. The Hyundai


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    hym41v33100btwg1mx32pc13386pin+11mx32bits PDF

    Contextual Info: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx32 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100BTWG Series DESCRIPTION The Hynix HYM4V33100BTWG Series are 1Mx32bits Synchronous DRAM Modules. The modules are composed of one 1Mx32bits CMOS Synchronous DRAMs in 400mil 86pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one


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    1mx32pc133hym4v33100btwg1mx32bits+3400mil86pin132pin PDF

    K4F151611D

    Contextual Info: M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


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    m53210124de2/dj21mx16m53210124d1mx32bits+41mx16bits42-pin72-pink4f151611d PDF

    KMM5321200C2W

    Abstract: KMM5321200C2WG
    Contextual Info: DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE


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    kmm5321200c2w/c2wgkmm5321200cw/cwg1mx16kmm5321200c2w+31mx32bits1mx16bitskmm5321200c2wg PDF

    Contextual Info: KMM5321204C2W/C2WG DRAM MODULE 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS KMM5321204C2W/C2WG DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .


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    kmm5321204c2w/c2wg1mx321mx16kmm5321200cw/cwg+3kmm5321200c2w/c2wgkmm5321204c2w1mx32bits PDF

    Contextual Info: DRAM MODULE KMM5321204C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .


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    kmm5321204c2w/c2wg1mx321mx16kmm5321200cw/cwg+2kmm5321200c2w/c2wgkmm5321204c2w PDF

    1MX16

    Abstract: KMM5321200C2W KMM5321200C2WG
    Contextual Info: DRAM MODULE KMM5321200C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .


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    kmm5321200c2w/c2wg1mx321mx16kmm5321200cw/cwg+2kmm5321200c2wkmm5321200c2wg PDF

    KMM5321204C2W

    Abstract: KMM5321204C2WG
    Contextual Info: DRAM MODULE KMM5321204C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE


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    kmm5321204c2w/c2wgkmm5321200cw/cwgkmm5321200c2w/c2wg1mx16+4kmm5321204c2w1mx32bits1mx16bitskmm5321204c2wg PDF

    1MX16

    Abstract: KMM5321204C2W KMM5321204C2WG
    Contextual Info: DRAM MODULE KMM5321204C2W/C2WG 1Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5321204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision .


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    kmm5321204c2w/c2wg1mx321mx16kmm5321200cw/cwg+3kmm5321200c2w/c2wgkmm5321204c2wkmm5321204c2wg PDF