5CK44 Search Results

Contextual Info: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

16v1204

Abstract: C1204B KM416V1204BJ 74142 74142 NOTE
Contextual Info: KM416V1204BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

16V1204

Contextual Info: KM416V1204BT CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM416S1020C Preliminary CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .2 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.