HY57V653220B Search Results

HY57V653220C

Contextual Info: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

HY57V653220B

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

HY57V653220B

Abstract: HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-7 HY57V653220BTC-8
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

HY57V653220BTC-7

Abstract: HY57V653220B HY57V653220BTC-10 HY57V653220BTC-10P HY57V653220BTC-5 HY57V653220BTC-55 HY57V653220BTC-6 HY57V653220BTC-8
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

Contextual Info: HY57V653220BTC-I 2Mx32-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION Th e Hy n i x H Y 5 7 V 6 5 3 2 2 0 B is a 67, 1 0 8 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , i de a l l y s ui t ed f or t he which r e q u i re l ow p o w e r c o n s u m p t i o n and e x t e n d e d t e m p e r a t u r e r an g e . H Y 5 7 V 6 5 3 2 2 0 B

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

Contextual Info: HY57V653220B 4 B a n k s x 5 1 2 K x 3 2 B it S y n c h r o n o u s D R A M DESCRIPTION The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

HY57V653220

Abstract: HY57V653220B hy57v653220b-a
Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V653220B is organized as 4banks of

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hy nix H Y 5 7 V 6 5 3 2 2 0 B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

Contextual Info: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

Contextual Info: HY57V653220BTC 2Mx32-bit, 4K Ret, 4Banks, 3.3V DESCRIPTION T h e Hy n i x H Y 5 7 V 6 5 3 2 2 0 B i s a 6 7 , 1 0 8 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e m e m o r y a p p l i c a t i o n s w h i c h r e q u i r e w i d e d a t a I / O a n d h i gh b a n d w i d t h . H Y 5 7 V 6 5 3 2 2 0 B is o r g a n i z e d as 4 b a n k s of 5 2 4 , 2 8 8 x 3 2 .

Contextual Info: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.

TCXO A31 10MHZ

Abstract: MT48LC4M32B2TG-6 L1V16 Datum OCXO
Contextual Info: PRELIMINARY PRODUCT BRIEF: SUBJECT TO CHANGE Rev: 091407 DS34S108, DS34S104, DS34S102, DS34S101 Description Abridged General Description Features The IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC draft-compliant DS34S108 allows up to eight T1/E1 links or frame-based serial HDLC links to be

20154TQ-C

Abstract: LXT972LC 29LV040B L1682B1J000 dynamite RC32300 L1682 MT4LSDT464HG-10EC3
Contextual Info: RC32351 System Recommendations 79RC32351 Notes Revision History February 5, 2002: Initial publication. Introduction The RC32351 Integrated Communications Processor meets the requirements of various embedded communications applications including residential gateways, SOHO routers, and wireless systems. It is a

Contextual Info: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial

4mx16

Abstract: HYM7V65401 8Mx72 PC100 16Mx64 1MX16BIT MX321 7V651601 Y57V641620HG y57v641620
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Num bering 9 SDRAM M odule Part Num bering 11 3. DATA SHEETS SDRAM 16M -bit SDRAM HY57V 161610DTC HY57V161610DTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V 1 M x16-bit, 4K Ref., 2Banks, 3.3V, ET_Part

TXC-06010-MB

Abstract: TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk
Contextual Info:  PacketTrunk-4 Plus Device TDMoIP/MPLS Gateway Device TXC-06010 DATA SHEET PRODUCT PREVIEW TXC-06010-MB, Ed. 2 June 2006 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII; HDX or

Contextual Info: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial

1gb pc133 SDRAM DIMM 144pin

Abstract: 54-PIN PC100 gm72v66841
Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh

Contextual Info: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3/STS-1 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

TL201212-4R7K

Abstract: pr4401 l0806 2N3904 A45 VRA6 C1152 VCC317 prestonia GEVENT12 quanta
Contextual Info: A B C D E 4 4 X-BUS FLASH USB Prestonia Prestonia CPU CPU BMC CPU BUS SP SIO 417 PP LPC BUS MEMORY I/F CSB5 3 CMIC_SL Thin IMB FLPY 3 IMB IDE PCI Slot 33MHz/32bit 4 DIMMs PCI BUS 0 BCM5702 Gigabit Ethernet RAGE XL Secondary 2 PCI BUS 1 PCI X Slot 100MHz/64bit