HT4 MARKING Search Results

AA10

Abstract: AA13 AB14 P802 SCAN50C400A SCAN50C400AUT UFJ440A AN-124 AN-1242 national
Contextual Info: February 2007 SCAN50C400A 1.25/2.5/5.0 Gbps Quad Multi-Rate Backplane Transceiver General Description Features The SCAN50C400A is a four-channel high-speed backplane transceiver SERDES designed to support multiple line data rates at 1.25, 2.5 or 5.0 Gbps over a printed circuit board

AA10

Abstract: AA13 P802 SCAN50C400 UFJ440A SCAN50C400UT AN-124
Contextual Info: January 2004 SCAN50C400 1.25/2.5/5.0 Gbps Quad Multi-rate Backplane Transceiver General Description Features The SCAN50C400 is a four-channel high-speed backplane transceiver SERDES designed to support multiple line data rates at 1.25, 2.5 or 5.0 Gbps over a printed circuit board

ht4 marking

Contextual Info: February 2007 SCAN50C400A 1.25/2.5/5.0 Gbps Quad Multi-Rate Backplane Transceiver General Description Features The SCAN50C400A is a four-channel high-speed backplane transceiver SERDES designed to support multiple line data rates at 1.25, 2.5 or 5.0 Gbps over a printed circuit board

AA10

Abstract: AA13 P802 SCAN50C400A SCAN50C400AUT UFJ440A MDIO communication protocol AN1242 HT4 MARKING
Contextual Info: SCAN50C400A 1.25/2.5/5.0 Gbps Quad Multi-rate Backplane Transceiver General Description Features The SCAN50C400A is a four-channel high-speed backplane transceiver SERDES designed to support multiple line data rates at 1.25, 2.5 or 5.0 Gbps over a printed circuit board

AN-1242 national

Contextual Info: SCAN50C400 SCAN50C400A 1.25/2.5/5.0 Gbps Quad Multi-Rate Backplane Transceiver Literature Number: SNOSA22G February 2007 SCAN50C400A 1.25/2.5/5.0 Gbps Quad Multi-Rate Backplane Transceiver General Description Features The SCAN50C400A is a four-channel high-speed backplane

jtp 7n

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE bbS3T31 003bi4fl5 fl33 BY527 D IAPX CONTROLLED AVALANCHE RECTIFIER DIODE Double-diffused glass passivated rectifier diode in hermetically sealed axial-leaded glass envelope capable o f absorbing reverse transients, intended fo r rectifier applications in colour television circuits

SB002-15SPA

Abstract: SB005-09CP SB005-09SPA SB01-15NP SB02-09CP SB02-09NP SB02-15 SB05-09 SB10-09T S0T143
Contextual Info: SAfiYO Small-Signal High-Voltage Schottky Barri er Diodes 2 S i n g l e T y p e S{: Mounted on ceramic board (250mm' X 0.8mm) ☆: Mounted on Cu foil (16mm‘X 0.2mmt) on glass epoxy board 0:Refer to the individual catalogue of each product because the center part of PCP outline is completely

SPD221P

Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Contextual Info: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).

ht4 marking

Abstract: TRANSISTOR MARKING TE SOT363
Contextual Info: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 10 Philips Semiconductors 1999 May 20 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor

T9049

Abstract: A7005 MT9D49M-6
Contextual Info: » M I C-n Rw On Ni I iH M 49 4 MEGX 9 DRAMM OT9D DULE DRAM MODULE 4 MEG X 9 DRAM FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT9D49M-6 PIN ASSIGNMENT Top View

svc253

Abstract: MARKING 1ED 5176 to-220 PCP MOSFET MCP6 Marking sanyo
Contextual Info: VARIABLE-CAPACITANCE DIODES IOCAP SA0YO Low-volt age and high-voltage variable capacitance diodes are available for both of AM electronic tuning use and FM electronic tuning use. gg F e a t u r e s ♦ High capacitance ratio ♦ Good linearity ♦ Small-sized package

BP317

Abstract: ht4 marking
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 10 1999 May 20 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH4

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

F527S

Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

tua6010x

Abstract: SIEMENS quartz crystal b200 10 tuner TNT tua c5 GS007
Contextual Info: / / / ' preliminary IC-SPECIFICATION SIEMENS TU A 601 OX T V M ixer-O scillator-P LL for 1.1 G H z page C o n ten ts 1 Functional D escription, Application 2 Pin D efintion and Function 3 -4 5 Block D iagram 6 -1 0 C ircuit Description Pinning, P ack ag e

TE 7751

Abstract: M6-C
Contextual Info: M IT S U B IS H I M IC R O C O M P U T E R S M37754M6C-XXXGP M37754M6C-XXXHP s° SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • Single power s u p p ly .5 V ±1 0 % T h e M 3 7 7 5 4 M 6 C -X X X G P and M 3 7 7 5 4 M 6 C -X X X H P are single-chip

ht12 decoder

Abstract: 417-183 epd driver ic nec CB-11
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TAP 106M 050 BPS

Abstract: 574 nec datasheet HT12 D datasheet HT12 E 417-183 7808 TO 220 EPD controller ht12 decoder Machine tool controls epd driver ic
Contextual Info: User’s Manual µPD98410 NEASCOT-X10 1.2G ATM SWITCH LSI Document No. S12523EJ2V0UMJ1 (2nd edition) Date Published October 2000 N CP(K) 1998 Printed in Japan [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

NCT7904D

Contextual Info: NCT7904D H/W Monitor Date: 2014/2/10 Revision: 1.44 NCT7904D Table of Content1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 7 FEATURES . 8

HT-241

Abstract: BGA45 VCI-0-127 cen 496
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: W83795G/ADG Nuvoton H/W Monitor Date: Mar/3/2010 Revision: 1.43 W83795G/ADG Table of Content1. 2. 3. GENERAL DESCRIPTION W83795G . 4 GENERAL DESCRIPTION (W83795ADG) . 5