HN2D02FU Search Results

Contextual Info: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D02FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Small Total Capacitance

HN2D02FUTW1T1

Abstract: HN2D02FUTW1T1G
Contextual Info: HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications.

HN2D02FUTW1T1G

Contextual Info: HN2D02FUTW1T1G Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications.

SC88 MARKING A1

Contextual Info: HN2D02FUTW1T1G, HN2D02FUTW1T1G Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount

419B-02

Abstract: 419b HN2D02FUTW1T1
Contextual Info: HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications.

Contextual Info: TOSHIBA HN2D02FU TOSHIBA DIODE H • ■ N m 'm SILICON EPITAXIAL PLANAR TYPE 7 n mmr f l 7 F 1 1 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm HN2D02PU is composed of 3 independent diodes. TT A m T /m _ \ Low Forward Voltage : vj?’ 3 = U.30V Viyp.;

HN2D02FU

Contextual Info: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm HN2D02FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance

HN2D02FU

Contextual Info: TO SHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • • • • HN2D02FU is composed of 3 independent diodes. Low Forward Voltage : Vjr 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

MARKING CODE R7 DIODE

Abstract: marking R7 diode
Contextual Info: HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications.

HN2D02FU

Contextual Info: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm z HN2D02FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance

HN2D02FU

Contextual Info: HN2D02FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN2D02FU ○ 超高速スイッチング用 z z z z 単位: mm ウルトラスーパーミニ 6 端子 パッケージに 3 素子を内蔵しています。 順方向特性が良い。

sot 363 marking code CD

Contextual Info: HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-88 package which is designed for low power surface mount applications.

HN2D02FU

Contextual Info: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm l HN2D02FU is composed of 3 independent diodes. l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance

Contextual Info: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit: mm z HN2D02FU is composed of 3 independent diodes. z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance

HN2D02FU

Contextual Info: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching Application Unit in mm HN2D02FU is composed of 3 independent diodes. Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance

Contextual Info: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • HN2D02FU is composed of 3 independent diodes. • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Small Total Capacitance

Contextual Info: TOSHIBA HN2D02FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN2D02FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm HN2D02FU is composed of 3 independent diodes. Low Forward Voltage : Vjr 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.)

4558 dd

Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
Contextual Info: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

Contextual Info: FEATURES Compensates cables up to 300 meters for wideband video 60 MHz equalized BW at 300 meters of UTP cable 120 MHz equalized BW at 150 meters of UTP cable Fast time domain performance 70 ns settling time to 1% at 300 meters of UTP cable 7 ns rise/fall times with 2 V step at 300 meters of UTP cable