2N5455
Abstract: 40636 2SK960 2Sk955 hfe max 200 2SK989 A5T2907 40361 40538 A8T4061
Contextual Info: STI Type: 2N3389 Notes: Polarity: NPN Power Dissipation: .80 VCBO: 195 VCER: 160 ICBO: 140 ICBO A: 2.0 hFE: 60 hFE A: 7.0 VCE: .80 VBE: .90 IC: 10 COB: 10 fT: 30 Case Style: TO-205AD/TO-39 Industry Type: 2N3389 STI Type: 2N3410 Notes: Polarity: NPN Power Dissipation: .50
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2n3389o-205ad/to-392n34102n3413+122n3411ad8152n5455406362sk9602sk955hfe max 2002sk989a5t29074036140538a8t4061
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2SD1681
Abstract: ITR09018
Contextual Info: 2SD1681 Ordering number : EN2020B SANYO Semiconductors DATA SHEET 2SD1681 NPN Epitaxial Planar Silicon Transistor 18V/1.2A Switching Applications Applications • Converters, relay drivers, low-voltage and high power AF Amplifier. Features • • Low saturation voltage and excellent linearity of hFE.
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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npn110fab-100mcbvcb0-30vpc-125mw+13lc-10mafab-150mcfab-200mctil78photo transistor til78k1202phototransistor ocp71photo til78til78 phototransistor2n3182sk19gr2sk19yc682a
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LOW-POWER SILICON NPN
Abstract: 40478 2SC382 40481 BF166 2SC674 bsx92 2sc237 BSV77 98ya
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number Manufacturer Y BR CEO fT (V) (Hz) hFE Ic Max (A) Cobo Max (F) ICBO Max (A) t, Max (8) tf Max (8) Po Max (W) Toper Max eC) Package Style Additional Transistors, (Cont'd) 5 10 BSV90 BSV91 BSV91 BSV77 2SC237 2SC237
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bsv90bsv91bsv772sc237+112sc239bf187bf306bf166low-power silicon npn404782sc382404812sc674bsx9298ya
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2sd 5023
Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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-26unf-2ao-48d2sd 5023transistor bc 945+82sc 9012bc 9013transistor bc 8559416atransistor bc345bfy41bcx 388bc 945
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2sd 5023
Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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13llsdto-392sd 5023bc 9013+8bc 9013 g2sc 90122218acs9012bc526transistor bc 945bc287transistor bc345
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power bjt advantages and disadvantages
Abstract: HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405
Contextual Info: A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293 Introduction The bipolar junction transistor BJT is quite often used as a low noise amplifier in cellular, PCS, and pager applications due to its low cost. With a minimal number
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hbfp-0405hbfp-04205968-2387e5988-6173en+9power bjt advantages and disadvantageshxtr-3101design dc stability into your transistor circuitshxtr 3101 transistortransistors bjt listsilicon bipolar transistor hewlett-packardhewlett-packard transistor microwaveirb1hbfp0405
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2SC631
Abstract: 2SC632 FV918 2N1082 transistor 2sC632 BCY50 2N7481 a608 2SC402A ML102B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bd265bd265abd265by220b+13bd265lbd266lbd267l2sc6312sc632fv9182n1082transistor 2sc632bcy502n7481a6082sc402aml102b
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transistor a640
Abstract: transistor A608 A608 transistor pnp 2SC634 A641 NPN transistor A607 A643S A608 transistor FV918 A642 transistor pnp
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ft4020ft4021ft4022bvceo-45v+13icbo-10nabvceo-60vft4023transistor a640transistor a608a608 transistor pnp2sc634a641 npn transistora607a643sa608 transistorfv918a642 transistor pnp
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2SK19GR
Abstract: X70a 2SK19Y DFNA3-100 K1201 BFS28 DG-34 transistor fet 2sk19gr A641 NPN transistor k1001
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110ft4020ft4021ft4022+13bvceo-45vicbo-10nabvceo-60v2sk19grx70a2sk19ydfna3-100k1201bfs28dg-34 transistorfet 2sk19gra641 npn transistork1001
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2sd1681
Abstract: 2sb1141
Contextual Info: Ordering number:ENN2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions • Converters, relay drivers, low-voltage and high power AF Amplifier. unit:mm 2042B [2SB1141/2SD1681] Features
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2SD1681
Abstract: 2SB1141
Contextual Info: Ordering number:ENN2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions • Converters, relay drivers, low-voltage and high power AF Amplifier. unit:mm 2042B [2SB1141/2SD1681] Features
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FV918
Abstract: MA7809 a608 L17D
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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transistor a640
Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bvcb0-80vbvce0-60vbvebo-15vbvcbo-100v+15bvceo-80vbveb0-15vbvcb0-60vbvce0-40vmhm2101transistor a640transistor a6082sc632transistor 2sc6322sc634l14bpt-100wca3036dm02bfv918
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ma7805
Abstract: BSX34 2N3406 NS6208 NS3041 BSX85 sc-1625 T072 UC340 UC801
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110voff-200uvns8000ns8003+15oc740pt-500mwbvcbo-12v50-1500kcvoff-100uvma7805bsx342n3406ns6208ns3041bsx85sc-1625t072uc340uc801
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ma7805
Abstract: 2n2213 2N2569 2N3406 2N2307 2N2570 BC199B NS6210 NS7630 TF251
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ma78052n22132n25692n3406+62n23072n2570bc199bns6210ns7630tf251
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2SB1141
Abstract: 2020-3
Contextual Info: Ordering number:2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions • Converters, relay drivers, low-voltage and high power AF Amplifier. unit:mm 2042A [2SB1141/2SD1681] Features
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ma7805
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ma7805 |
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MA7805
Abstract: 2N2307 2CY38 germanium low power 150mW ST8034 5E29 NS1862 sl RS40 QD401-78 QD402-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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voff-200uvns8000ns8003oc740+15pt-500mwbvcbo-12v50-1500kcvoff-100uv0-50kcma78052n23072cy38germanium low power 150mwst80345e29ns1862sl rs40qd401-78qd402-78
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ma7805
Abstract: BFR14 AT344 GI3793 GME3001 PET3001 T018 2N3082 BSV56 Ro-270
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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voff-200uvns8000ns8003oc740+15pt-500mwbvcbo-12v50-1500kcvoff-100uv0-50kcma7805bfr14at344gi3793gme3001pet3001t0182n3082bsv56ro-270
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ma7805
Abstract: Transistor 2n2307 2N2709 2N4411 u13106 2n2213 ME214 2Sa567 NS6210 400M
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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voff-200uvns8000ns8003oc740+15pt-500mwbvcbo-12v50-1500kcvoff-100uv0-50kcma7805transistor 2n23072n27092n4411u131062n2213me2142sa567ns6210400m
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MA7805
Abstract: ME214 OC740
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ma7805me214oc740 |
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ma7805
Abstract: 2N3406 BC412 KIS434 NS435 NS436 NS437 NS438 SA1000 T018
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol
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voff-200uvns8000ns8003oc740+15pt-500mwbvcbo-12v50-1500kcvoff-100uv0-50kcma78052n3406bc412kis434ns435ns436ns437ns438sa1000t018
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MA7805
Abstract: Transistor 2n2307 K1202 2SK19GR 2SK19Y 2N3406 DG-34 transistor ns800 Dh-37 C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD EFFECT TR A N SIST O R S 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110voff-200uvns8000ns8003+15oc740pt-500mwbvcbo-12v50-1500kcvoff-100uvma7805transistor 2n2307k12022sk19gr2sk19y2n3406dg-34 transistorns800dh-37c682a
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