2SK1001
Abstract: 2SK1002 2SK918 2SK990 2SK994 2SK1000 2SK962 2SK976 2SK987 2SK989
Contextual Info: - 78 - f m s tt £ m m m ^ * K 2SK962 £: ft V* V fe i* * (V) ft * (A) M S X P d /P c h ft * (W) (¿E? (A) Vg s (V) W s wiy (A) (min) (max) Vd s (V) (V) (V) sm (min) Vd s (S) {\ l f (V) 1d (A) SW-Reg, USP, DDC MOS N E 900 DSS ±30 S 8 D 2SK963 n r DDC, Motor-D
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2sk9622sk9632sk9682sk970+142sk971220nstyp2sk992230nstyp2sk9932sk10012sk10022sk9182sk9902sk9942sk10002sk9762sk9872sk989
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2SK566
Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
Contextual Info: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET
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2sk676power12gd02137t-31-25+1012ghz2sk5662sk9892sk6772sk5873sk1652sk67-62sk92sk677-22sk676-1
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2N5455
Abstract: 40636 2SK960 2Sk955 hfe max 200 2SK989 A5T2907 40361 40538 A8T4061
Contextual Info: STI Type: 2N3389 Notes: Polarity: NPN Power Dissipation: .80 VCBO: 195 VCER: 160 ICBO: 140 ICBO A: 2.0 hFE: 60 hFE A: 7.0 VCE: .80 VBE: .90 IC: 10 COB: 10 fT: 30 Case Style: TO-205AD/TO-39 Industry Type: 2N3389 STI Type: 2N3410 Notes: Polarity: NPN Power Dissipation: .50
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2n3389o-205ad/to-392n34102n3413+122n3411ad8152n5455406362sk9602sk955hfe max 2002sk989a5t29074036140538a8t4061
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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rd91ebq2n4401d1n3940q2n2907a+7d1n1190q2sc1815q2n3055q2n1132d1n750d02cz10d1n751
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