HEXFET III - A new Generation of Power MOSFETs
Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
AN-966.
-250V
AN-964D
HEXFET III - A new Generation of Power MOSFETs
irf 1490
AN-964D
irfc9024
AN-966
1000V P-channel MOSFET
application new hexfet
AN966
transistor 9527
IRFC210
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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AN-955.
AN-986.
0-60V
AN-964D
IRFC9130
irfc130
IRLC034
IRLC024
irfcg20
IRFC9014
IRFC110
IRFC9230
irfc9120
IRFC430
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g371
Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
Contextual Info: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International
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T-39-Ã
G-376
g371
IRFF330
IRFF331
IRFF332
IRFF333
510 MOSFET
EC07
CIRCUIT g371
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forsythe
Abstract: INT-936 IRFP150 AN-941
Contextual Info: Index AN- 941 v.Int PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark for International Rectifier Power MOSFETs) Summary: • • • • • General guidelines Steady state sharing Dynamic sharing at turn-on Dynamic sharing at turn-off
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forsythe
Abstract: AN941 INT-936 how mosfets connect parallel IRFP150 IRFP150 equivalent
Contextual Info: AN- 941 v.Int PARALLELING HEXFET POWER MOSFETs (HEXFET Power MOSFET is the trademark for International Rectifier Power MOSFETs) Summary: • • • • • General guidelines Steady state sharing Dynamic sharing at turn-on Dynamic sharing at turn-off Related topics
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f422
Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
Contextual Info: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International
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0GGci400
T-39-09
G-382
f422
transistor f422
tr f422
G-377
IRFF423
358E
IRFF420
IRFF421
IRFF422
420 Diode 2ba
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IRFH350
Abstract: 412a L243 g602
Contextual Info: HE D § 4 A5545E GQCHtiEE 1 | Data Sheet No. PD-9.412A INTERNATIONAL R E C T I F I E R T - i T ‘ / 3 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFH35Q N-CHANNEL POWER MOSFETs 400 Volt, 0.3 Ohm HEXFET Features: The HEXFET® technology is the key to International
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G-603
IRFH350
5S452
T-39-13
G-604
412a
L243
g602
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mosfet j142
Abstract: j143 J141 mosfet IRFJ142 J141 j142 IRFJ140 IRF 140 G527 IRFJ141
Contextual Info: HE D I MÛSS4S2 OOQTSSQ 0 | Data Sheet No. PD-9.402A INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-11 IRFJ140 HEXFET TRANSISTORS IRFJ141 N-CHANNEL POWER MOSFETs IRFJ14 2 IRFJ143 100 Volt, 0.085 Ohm HEXFET The HEXFET® technology is the key to International
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T-39-11
IRFJ140
IRFJ141
IRFJ142
IRFJ143
G-531
IRFJ140,
IRFJ141,
IRFJ142.
IRFJ143
mosfet j142
j143
J141 mosfet
J141
j142
IRF 140
G527
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TR C458
Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
Contextual Info: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package
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T-39-13
IRFP040
O-S47AC
O-247AC
05BVDSS
C-459
IRFP040,
IRFP042
T-39-13
C-460
TR C458
transistors c458
IRFP040
C458 C
C459
TIL 220
L740
c458
c455
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IRF7316
Contextual Info: International Rectifier I R PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = -30 V Ros on = 0.058Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier
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IRF7316
C-134
C-135
IRF7316
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IRF9Z30
Abstract: IRF9Z32 a510a RF92
Contextual Info: HE 0 I MflSSMSE Q000b3b 4 | Data Sheet No. PD-9.471A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRFSZ30 IRFSZ32 P-CHANNEL 5 0 VOLT POWER MOSFETs Features -50 Volt, 0.14 Ohm, HEXFET T0-220AB Plastic Package The HEXFET® technology is the key to International Rectifier’s
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T0-220AB
C-390
IRF9Z30
IRF9Z32
a510a
RF92
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C641
Contextual Info: PD - 9.1413D International M R Rectifier IRLMS5703 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vdss = "30V RDS(on) = 0.20Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize
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1413D
IRLMS5703
OT-23.
100ps
C641
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irf1010e equivalent
Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N
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O-220AB
O-220
IRFZ24N*
IRFIZ24N
IRFD024
IRF1010E*
IRFI1310N
IRFD014
IRFZ44E*
IRFI540N
irf1010e equivalent
irfp250n equivalent
IRF744 equivalent
IRFP260n equivalent
IRF9540N equivalent
IRF730A equivalent
IRFBE30 equivalent
irfp260n
IRF4905 equivalent
IRFU9120 equivalent
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irf7309
Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
Contextual Info: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S
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OT-223
IRF3710S
IRF7324
IRF1310NS
IRF731450
1N4049
300U80A
150L10A
DO-30
irf7309
IRF7507TR
IRF7342
IRF7210
IRLML2803TR
IRF964
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IRF p 536 MOSFET
Abstract: IRF 534 100-C IRFJ220 IRFJ221 IRFJ222 IRFJ223 FJ222 LG t
Contextual Info: HE D I 4ÛSS45Z GaOTSSt, 0 | Data Sheet No. PD-9.403A T-39-11 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER I « R IRFJSSO HEXFET TRANSISTORS IRFJ221 N-CHANNEL POWER MOSFETs IRFJ222 IRFJ223 200 Volt, 0.8 Ohm HEXFET T h e HEXFET® technology is the key to International
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SS45Z
T-39-11
G-537
IRFJ220,
IRFJ221,
IRFJ222,
IRFJ223
G-538
IRF p 536 MOSFET
IRF 534
100-C
IRFJ220
IRFJ221
IRFJ222
IRFJ223
FJ222
LG t
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transistor equivalent irf510
Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
Contextual Info: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.
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mosfet power totem pole CIRCUIT
Abstract: parallel connection of MOSFETs HEXFET Power MOSFET P-Channel hexfet audio amplifier IR power mosfet switching power supply 20V P-Channel Power MOSFET AN-950 AN-940 mosfet hexfet pair HEXFET Characteristics
Contextual Info: AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load
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tektronix 576 curve tracer
Abstract: tektronix type 576 curve tracer tektronix 475 short circuit tracer IRF630 AN957 curve tracer INT-944 AN-957 Tracer 176
Contextual Info: AN-957 v.Int Measuring HEXFETCharacteristics (HEXFET is the trademark for International Rectifier Power MOSFETs) Topics covered: • • • • • • • • • • • • • • • • • • • Converting the nomenclature from bipolars to MOSFETs
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AN-957
tektronix 576 curve tracer
tektronix type 576 curve tracer
tektronix 475
short circuit tracer
IRF630
AN957
curve tracer
INT-944
AN-957
Tracer 176
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IRFIP450
Abstract: IRFIP150 IRFIP250 IRFIP350 THOMSON DISTRIBUTOR 58e d IRFIP244 IRFI630 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR
Contextual Info: THOMSON/ DISTRIBUTOR sflE ç m Toab a73 ooos?^? 330 • tcs< HEXFET Power MOSFETs International .'*»1Rectifier FullPak N-Charmel New Product FullPak Fully-isolated HEXFETs International Rectifier is proud to introduce its FullPak line of fullyisolated power MOSFETs. Available in popular-sized package outlines,
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000S7T7
O-220
O-247
IRFIP044
IRFIP054
IRFIP140
IRFIP150
T0-247AC
IRFIP240
IRFIP250
IRFIP450
IRFIP350
THOMSON DISTRIBUTOR 58e d
IRFIP244
IRFI630
THOMSON 58E
THOMSON 58E CASE OUTLINE
THOMSON DISTRIBUTOR
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F9232
Abstract: IRF9233 Irf9230
Contextual Info: HE D I 4ÖSSM52 GOO^Et. 1 | Data Sheet No. PD-9.349D INTERNATIONAL R E C T I F I E R 1 -3 ? ^ f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFS230 IRF9S3Ì P-CHANIMEL 2 0 0 VOLT IRF9S3S POWER MOSFETs IRF9S33 -200 Volt, 0.8 Ohm HEXFET Features: The HEXFET technology is the key to International Rectifier’s
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SSM52
IRFS230
IRF9S33
G-208
F9232
IRF9233
Irf9230
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irf P-Channel MOSFET audio
Abstract: IRF610 complementary F9622 IRF9623 power MOSFET IRF610 IRF9621 rf9620 irf9622 k 3919 F9620
Contextual Info: HE D I MÖSS452 INTERNATIONAL GOüöbDb Data Sheet No. PD-9.351E b | RECTIFIER T-39-19 INTERNATIONAL RECTIFIER TOR HEXFET TRANSISTORS IRFS620 IRFSG21 P-CHANNEL aoo VOLT IRF9GSS POWER MOSFETs IRF9623 -200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package Features:
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SS452
T-39-19
IRFS620
IRFSG21
T0-220AB
IRF9620,
IRF9621,
IRF9622,
IRF9623
irf P-Channel MOSFET audio
IRF610 complementary
F9622
power MOSFET IRF610
IRF9621
rf9620
irf9622
k 3919
F9620
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mosfet power totem pole CIRCUIT
Abstract: IR power mosfet switching power supply AN-940 mosfet AN-950 HEXFET Power MOSFET P-Channel AN937 AN-948 P-channel HEXFET Power MOSFET parallel connection of MOSFETs hexfet audio amplifier
Contextual Info: Index AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load
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diode c446
Abstract: C446 0023I diode c445 diode c448
Contextual Info: P D -9.1671 International IQR Rectifier IRFZ44E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 60V Ros on = 0.023ÎÎ lD = 48A Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize
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IRFZ44E
O-220
C-448
diode c446
C446
0023I
diode c445
diode c448
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IRFI530
Abstract: IRFI840 IRFIP450 TO-247 FULLPAK Package IRFIP244
Contextual Info: HEXFET International ül ]Rectifier Power MOSFETs FullPak N-Channel New Product FullPak Fully-isolated HEXFETs International Rectifier is proud to introduce its FullPak line of fullyisolated power MOSFETs. Available in popular-sized package outlines, these devices are designed to provide ease of use, lower costs of
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O-220
O-247
IRFIP044
IRFIP054
IRFIP140
IRFIP150
IRFIP240
IRFIP250
IRFIP244
IRFI530
IRFI840
IRFIP450
TO-247 FULLPAK Package
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