05BVDSS Search Results

Contextual Info: IDI ÉPPÉ llll SEME IRFN9240 LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 V DSS 0.25 -2 0 0 V -8 A ^D(cont) 3.0 0.051 f t ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: Illl W . mi SEME IRFN150 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 11.5 100 V V DSS 0.25 ID(cont) 3.0 19A 0.070ft ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

Contextual Info: nil =Vr= INI SEM E IRFY140C LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 . 8 3 (0 .1 9 0 ) V DSS 100 V 15A ^D(cont) 0.092ft ^D S (on) FEATURES • HERMETICALLY SEALED TO -257AA METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS

Contextual Info: im SEM E IRF140 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 28A ID(cont) 0.077Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) ^ dia. ! • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE

Contextual Info: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IRF044C-C

Contextual Info: nil =Vr= INI SEM E IRFY044C LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dim ensions in mm inches 4.70 5.00 10.41 V DSS ID(cont) ^DS(on) 60V 20A 0.035ft FEATURES HERMETICALLY SEALED T 0-220 METAL PACKAGE 2.75 BSC LIGHTWEIGHT T0-220M - Metal Package

DON60

Contextual Info: im i t t i IMI IRFN9240 SEME LA B MECHANICAL DATA Dim ensions in mm inches P-CHANNEL POWER MOSFET 11.5 V DSS 2.0 3.5 I D(cont) -200V -8 A ^D S (on) 0.051 Q 0.25 3.5 3.0 iC FEATURES -*- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: im SEM E IRF130 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V 14A V DSS I D(cont) 0.18Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) dia. ^ ! Á t I 1.09 (0.043) 0.97 (0.038) dia. 2 pics.

IRF044SM

Contextual Info: Illl E ^ i Illl SEME IRF044SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 4- V Dss 60V ^D(cont) 34A 3.0 ,r<” 3.5 •4 ► 0.25 I 2.0 0 .0 4 0 0 RpS(on) v r t1 1 ITT-1- FEATURES 3 • HERMETICALLY SEALED SURFACE MOUNT PACKAGE

Contextual Info: Mil W llll : SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET VDSS 11.5 2.0 3.5 60V 45A 0.027Q 0.25 3.5 I D(cont) 3.0 ^D S (on) iC FEATURES -1- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: Illl W . mi SEME IRFN044 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 60V 34A 0.040ft VDSS 11.5 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

Contextual Info: nil = V r= SEM E INI IRFN9130 LAB MECHANICAL DATA P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 11.5 2.0 3.5 0.25 3.5 3.0 V DSS -100V -9.3A 0.31ft ^D(cont) ^D S (on) FEATURES • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS

Contextual Info: Illl W . mi SEME IRFN140 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 11.5 100 V 13.9A 0.077Q V DSS 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

IRF9140SM

Contextual Info: Illl iF t i mi IRF9140SM SEME LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 n a ^D(cont) 3.0 3.5 -100V -14A 0.020Û VDss 0.25 M R DS(on) <£> FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE n • SM ALL FOOTPRINT - EFFICIENT USE OF

54mj

Contextual Info: im SEM E IRFE230 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 9 .1 4 (0 .360) 200V V dss 4.8A ^D(cont) 0 .46ft ^D S (on) FEATURES • SURFACE MOUNT • SMALL FOOTPRINT • HERMETICALLY SEALED • DYNAMIC dv/dt RATING LCC4 • AVALANCHE ENERGY RATING

Contextual Info: Illl W . mi SEME IRFN240 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 11.5 200V 13.9A 0.180ft V DSS 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

Contextual Info: mi = V r= INI IRFM150 SEME LAB MECHANICAL DATA N-CHANNEL POWER MOSFET D im ensions in mm inches 6.32 (0.249) 6.60 0.260 r< '- 1.02 (0.040) “ 1*1 I* 1.27 (0.050) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) V DSS 100 V 34A ^D(cont)

Contextual Info: mi = V r= INI IRFM250 SEM E LAB MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 6.32 (0.249) 6.60 0.260 r< '- 1.02 (0.040) “ 1*1 r 1.27 (0.050) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) V DSS 200V 27.4A ^D(cont)

Contextual Info: M il W llll : SEME IRFN250 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 V DSS 0.25 3.5 200V 14A I D(cont) 3.0 0.100Q ^DS(on) -1-iC FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF

IRF9240SM

Abstract: Scans-007819 t0220s
Contextual Info: im IP P i llll SEME IRF9240SM LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 V DSS 0.25 -8 A ^D(cont) 3.0 3.5 -2 0 0 V vr 0.051 n ^DS(on) irt"— *— FEATURES TT • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF

TR C458

Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
Contextual Info: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package

Contextual Info: im Etti llll SEME IRFN240 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 200V 13.9A 0.180ft 11.5 2.0 3.5 3.5 V DSS 0.25 ^D(cont) 3.0 ^D S (on) FEATURES TT • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: im SEM E IRF9230 LAB MECHANICAL DATA D im e nsio ns in mm inches P-CHANNEL POWER MOSFET -2 0 0 V V DSS - 6 .5 A I D(cont) 0.8Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE 20.32 (0.800) 18.80 (0.740) dia. • SIMPLE DRIVE REQUIREMENTS