250MJ Search Results

Contextual Info: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description  SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended

IGBT DRIVER ignition coil automotive

Abstract: igbt ignition automotive ignition coil on plug automotive ignition ignition coil IGBT advance ignition automotive ignition coil ignition driver ignition switch on coil smart igbt ignition coil
Contextual Info: ISL9V2540S3ST EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V Features General Description ! SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended

2SK2960

Contextual Info: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm

IGBT DRIVER ignition coil automotive

Abstract: V2540S igbt spice automotive ignition automotive ignition coil ignition igbt ISL9V2540S3S ISL9V2540S3ST advance ignition igbt ignition
Contextual Info: ISL9V2540S3S EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V General Description Features o ! SCIS Energy = 250mJ at TJ = 25 C ! Logic Level Gate Drive Applications ! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications Package The ISL9V2540S3S is a next generation ignition IGBT that

Contextual Info: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown unit: mm 4.6±0.2 15.0±0.3 ■ Applications

MP-25

Abstract: NP82N06CLC NP82N06DLC NP82N06ELC
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

VHF50HN

Abstract: is-50nx-c2 capacitor 10nj IS-B50LN-C2 IS-MR50LNZ 15 IS-50NX-C1 IS-B50LN-C1 wireless walkie talkie circuit IS-VU50HN IS-CT50HN
Contextual Info: G L O B A L L I G H T N I N G S O L U T I O N S PolyPhaser Corporation Product Catalog PRODUCT CATALOG ac Power Protectors dc Power Protectors Grounding Solutions Protected Bias-T dc Blocked Filters Combiner Protectors dc Blocked Single Transmitter Twisted Pair Cable Protectors

Contextual Info: IRF140 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)

IRFN140SMD

Contextual Info: SEME IRFN140SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: SEME IRFN140SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: S EM E IRF140SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

IRF140SM

Contextual Info: SEME IRF140SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 100V 13.9A 0.077W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

Contextual Info: im s ffs n il IRFN140 SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11 s 100 V V Dss 0.25 13.9A ^D(cont) 3.0 r*-H 0 .077G R DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

NP82N06ELC

Abstract: MP-25 NP82N06CLC NP82N06DLC
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06CLC, NP82N06DLC, NP82N06ELC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION

Contextual Info: SEME IRFN140 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 100V 13.9A Ω 0.077Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF