IRFM150 Search Results

2N7224 JANTXV

Abstract: 3000CL 2N7224 IRFM150
Contextual Info: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

2N7224 JANTX

Abstract: 2N7224 JANTXV2N7224 IRFM150 JANTX2N7224
Contextual Info: Data Sheet No. PD-9.487C IOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR Zi N-CHANNEL IRFM150 SN7S84 JANTXSN7SS4 JAIMTXVSN7SS4 [ R E F : M I L - S - 1 9 S O O / S 9 2 ) Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: SHD224502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4156, Rev. – HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .07 Ohm, 30A MOSFET • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM150 MAXIMUM RATINGS

shd225502

Abstract: shd2259
Contextual Info: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .07 Ohm, 30A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM150

IRFM150

Contextual Info: 2N7224 IRFM150 SEME LAB MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685)

2N7224

Abstract: IRFM150
Contextual Info: 2N7224 IRFM150 SEME LAB MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685)

IRFM150

Abstract: SHD224502
Contextual Info: SHD224502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4156, Rev. – HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .07 Ohm, 30A MOSFET • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFM150 MAXIMUM RATINGS

Contextual Info: Data Sheet No. PD-9.487C IOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR Zi N-CHANNEL IRFM150 SN7S84 JANTXSN7SS4 JAIMTXVSN7SS4 [ R E F : M I L - S - 1 9 S O O / S 9 2 ) Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: IRFM150 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)34 I(DM) Max. (A) Pulsed I(D)21 @Temp (øC)100# IDM Max (@25øC Amb)150 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

IRFM150

Abstract: SHD225502
Contextual Info: SHD225502 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 223, REV A Former part number SHD2259 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .07 Ohm, 30A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFM150

Contextual Info: IRFM150D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)34 I(DM) Max. (A) Pulsed I(D)21 @Temp (øC)100# IDM Max (@25øC Amb)150 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

Contextual Info: IRFM150U Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)34 I(DM) Max. (A) Pulsed I(D)21 @Temp (øC)100# IDM Max (@25øC Amb)150 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

Contextual Info: mi = V r= INI IRFM150 SEME LAB MECHANICAL DATA N-CHANNEL POWER MOSFET D im ensions in mm inches 6.32 (0.249) 6.60 0.260 r< '- 1.02 (0.040) “ 1*1 I* 1.27 (0.050) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) V DSS 100 V 34A ^D(cont)

Contextual Info: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM150 2IM7224 JANTX2N7224 JANTXV2N7224 [REF: MIL-S-19SOO/592] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

547 MOSFET

Contextual Info: SHD218502 SHD218502A SHD218502B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 547, REV. Formerly Part Number SHD2182/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .055 Ohm, 38A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on

SHD239608

Abstract: shd239606
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRFM040

Abstract: IRFM050 IRFM460 4B4 RECTIFIER IRFM9130 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340
Contextual Info: HIGH-REL HEXFETs I N T E R N A T I O N A L R E C T I F I E R r io R ~ I NT ERN ATIO NAL RECTIFIER 2LE D • 4fi5S452 ODIOSbb fl ■ M-pak — TO-254AA Isolated Package N-CHANNEL Types Vos V if IRFM050 IRFM040 RDS(0N1 1q com >DM PD (max) Tc - 25°C pulsed

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IRFJ140

Abstract: IRLF110
Contextual Info: Government/ Space Products International [1»1Rectifier Power MOSFETS High Reliability Logic Level — N-Channel V d s Drain Source Voltage Vblts Part Number IRLF110 IRLF120 IRLF130 100 RDS(on) On-State Resistance (Ohms) 0.60 0.35 0.20 Iq Continuous Drain Current