IRFN9240 Search Results

IRFN9240

Abstract: JANTX2N7237U JANTXV2N7237U
Contextual Info: PD - 91554D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9240 JANTX2N7237U JANTXV2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9240 RDS(on) I D 0.51Ω -11A HEXFET® MOSFET technology is the key to International

International Rectifier 9240

Contextual Info: Provisional Data Sheet No. PD-9.1554A International IQR Rectifier HEXFET POWER MOSFET IRFN9240 P-CHANNEL -200Volt, 0.51 a HEXFET Product Summary H E X F E T technology is the key to International Rectifier’s advanced line of power M OSFET transis­ tors. The efficient geometry achieves very low on-state

Contextual Info: IDI ÉPPÉ llll SEME IRFN9240 LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 V DSS 0.25 -2 0 0 V -8 A ^D(cont) 3.0 0.051 f t ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF

IRF9240

Abstract: IRF9240SMD IRFN9240SMD
Contextual Info: IRF9240 IRFN9240SMD MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) IRF9240 1.52 (0.06) 3.43 (0.135) D 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52)

DON60

Contextual Info: im i t t i IMI IRFN9240 SEME LA B MECHANICAL DATA Dim ensions in mm inches P-CHANNEL POWER MOSFET 11.5 V DSS 2.0 3.5 I D(cont) -200V -8 A ^D S (on) 0.051 Q 0.25 3.5 3.0 iC FEATURES -*- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: PD - 91554E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

Contextual Info: SEME IRFN9240 LAB MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 –200V –8A Ω 0.051Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

bad sec lar

Contextual Info: I p|-0 mationa I 9.1554 Provisional Data Sheet No. PD- M R Rectifier HEXFET POWER MOSFET IRFN9240 N -C H A N N E L -200 Volt, 0.51 Cl HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

smd 2f

Abstract: IRFN9240 smd diode 2F 7A BVDSS
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1554 HEXFET POWER MOSFET IRFN9240 N-CHANNEL Ω HEXFET -200 Volt, 0.51Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.

IRFN9240

Abstract: JANS2N7237U JANTX2N7237U JANTXV2N7237U
Contextual Info: PD - 91554E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International

IRFN9240SMD

Contextual Info: IRFN9240SMD MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

smd 2f

Abstract: IRFN9240 Diode smd 2f ir mosfet smd package smd diode 44 smd diode 2F 7A
Contextual Info: Provisional Data Sheet No. PD-9.1554A HEXFET POWER MOSFET IRFN9240 P-CHANNEL Ω HEXFET -200 Volt, 0.51Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state

IRF P CHANNEL MOSFET 10A 100V

Abstract: 2N7237U P 838 X MOSFET IRFN9240 JANTX2N7237U JANTXV2N7237U smd diode 2F 7A
Contextual Info: PD-91554C IRFN9240 JANTX2N7237U JANTXV2N7237U HEXFET POWER MOSFET [REF:MIL-PRF-19500/595] P - CHANNEL Ω MOSFET -200 Volt, 0.51Ω Product Summary Part Number IRFN9240 ® HEXFET power MOSFET technology is the key to International Rectifier’s advanced line of power

diode smd 1D

Contextual Info: Provisional Data Sheet No. PD-9.1554A International IQ R Rectifier HEXFET POWER MOSFET IRFN9240 P-CH A N N EL -200 Volt, 0.51 £2 HEXFET Product Summary H E X F E T te c h n o lo g y is th e key to In te rn a tio n a l Rectifier’s advanced line of power MOSFET transis­

IRF9240

Abstract: IRF9240SMD IRFN9240 IRFN9240SMD mosfet to3 TO3 package
Contextual Info: IRF9240 IRFN9240 IRF9240SMD MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) IRF9240 1.52 (0.06) 3.43 (0.135) D 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)

IRFN9240SMD

Contextual Info: PRODUCT: SEME LAB IRFN 9240SMD ISSUE: 3 PAGE 1 OF 3 TYPE: PACKAGES: P CHANNEL FET SMD1 DESIGNATION ORIGINATED DATASHEET ENTERED PROOFED ISSUED BY DATE DAVID DONEGANI 17/07/00 CAROL SILVEY 17/07/00 MAIN FILENAME PATH & FILENAME: C:\APPROVED\DTASHEET\SML_GEN\FETS\irfn9240smd.QXD

Contextual Info: IRFN9240 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)8.0 I(DM) Max. (A) Pulsed I(D)5.0 @Temp (øC)100# IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75# Minimum Operating Temp (øC)-55

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

IRF5402

Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Contextual Info: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M

Diode SMD ED 9C

Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Contextual Info: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for