GP400 Search Results

Contextual Info: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

12v 2a charge control

Abstract: 4000-mAh
Contextual Info: Data Sheet Model No.: GP400CHC Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension with Sleeve : ∅ = 26.2mm H = 50.0mm : Recommended discharge current 800mA to 12A Voltage (V) Nominal Voltage : 1.2V 1.4 Nominal Capacity 1.3 Charging Condition

GP400LAHT

Abstract: IEC61951-1 ZRS1064
Contextual Info: Data Sheet Model No.: GP400LAHT Type : High Temperature Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension with Sleeve : Φ =18.3mm H = 70.0 mm Applications : Recommended discharge current 400 to 2000mA 1.3 Nominal Voltage : 1.2V 1.1 Nominal Capacity

AN4502

Abstract: AN4503 AN4505 AN4506 GP400DDS18
Contextual Info: GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK)

Contextual Info: Si GEC PLESS EY SEMICONDUCTORS DS4137-6.2 GP400LSS12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS • High P ow er Switching. ■ M otor Control. TYPICAL KEY PARAMETERS VCES 1200V V c E ,a„ ^c(cont> ■ U P S. ■ A C And D C Servo Drive Amplifiers. 'c p k ,

Contextual Info: M ITEL S E M IC O N D U C T O R GP400LSS12S Powerline N-Channel IGBT Module Supersedes July 1998 version, DS4137 - 7.3 DS4137 - 7.4 Decem ber 1998 The G P 400LS S 12S is a single sw itch 1200 volt, robust n channel e n h a n ce m e n t m ode insulated gate b ip ola r

GP400

Abstract: GP402 GP400 - GP410 GP401 GP404 GP406 GP408 GP410 GPPD-400-1B
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES GP400 - GP410

DS550-3

Abstract: DS5503-1 K1p TRANSISTOR GP400DDM12
Contextual Info: GP400DDM12 GP400DDM12 Dual Switch IGBT Module Advance Information DS5503-1.0 October 2001 FEATURES • High Thermal Cycling Capability ■ 400A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)

DS5306-2

Abstract: IGBT ac switch circuit AN4502 AN4503 AN4505 AN4506 GP400LSS12 AN5000 principle of rating
Contextual Info: GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200V Rating ■ 400A Per Module DS5306-2.3 November 2000

DS4137

Contextual Info: GP400LSS12S 0IT I M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBT Module DS4137 - 7.4 Decem ber 1998 S upersedes July 1998 version, DS4137 - 7.3 The GP400LSS12S is a single switch 1200 volt, robust n channel enhancem ent mode insulated gate bipolar

AN4502

Abstract: AN4503 AN4505 AN4506 GP400DDS12
Contextual Info: GP400DDS12 GP400DDS12 Powerline N-Channel Dual Switch IGBT Module DS5341-1.1 February 2000 The GP400DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the module is suitable for a variety of high voltage applications

Contextual Info: JULY 1996 GP400LSS12S ADVANCE ENGINEERING DATA DS4137-6.2 GP400LSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 400A IC(CONT) 800A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

AN4502

Abstract: AN4503 AN4505 AN4506 AN4507 GP400LSS18
Contextual Info: GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 400A Per Module KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK)

Contextual Info: VS-GP400TD60S www.vishay.com Vishay Semiconductors Dual INT-A-PAK Low Profile “Half Bridge” Trench PT IGBT , 400 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Trench PT IGBT technology • Low VCE(on) • Square RBSOA • HEXFRED antiparallel diode with ultrasoft reverse

GP400

Abstract: GP401 GP402 GP404 GP406 GP408 GP410 GPPD-400-1B
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES Proprietary "Soft Glass R ACTUAL SIZE OF DO-27 PACKAGE " P/N junction passivation

GP207

Abstract: GP152 GP600K gp1s6 GP151 GP4001 GP4002 GP4003 GP4004 GP4005
Contextual Info: 7455000 GLASS PASSIVATED RECTIFIER: ÖUA-TRON Maximum Peak Reverse TYPE Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load VPK @ 25°C TA @ 2S°C TA IR IFM VFM A pk « Ade APK VPK 75 75 75 75 75 75 75 50 50 50 50 50 50 50 5.0 5.0 5.0 5.0

GP406

Abstract: GP400 GP401 GP402 GP404 GP408 GP410 GPPD-400-1B
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE

GPPD-400-1B

Abstract: GP400 GP410
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES MECHANICAL SPECIFICATION FEATURES ➼➡➽➚➾✵➪➦➼④➶➘➹➏➴ ➷➦➬➱➮❐✃

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

E179149

Abstract: m4a9 nf003 equivalent
Contextual Info: Cat. No. I562-E1-03 USER’S MANUAL OMNUC G SERIES R88M-G@ AC Servomotors R88D-GT@ (AC Servo Drives) AC SERVOMOTORS/SERVO DRIVES Trademarks and Copyrights • Product names and system names in this manual are trademarks or registered trademarks of their

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES Proprietary "Soft Glass R ACTUAL SIZE OF DO-27 PACKAGE " P/N junction passivation

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-400-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 4 AMP HIGH RELIABILITY SOFT GLASS PASSIVATED SILICON DIODES MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION

GP404

Abstract: GP401 GP400 GP402 GP406 GP408 GP410
Contextual Info: DIOTEC ELECTRONICS CORP SßE D • S6MT107 000014^ T12 BIDIX DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No.: GPDP-401-A 'T '- O I - 1 - ? 4 A M P HIGH RELIABILITY SILICON DIOD ES