44LBS Search Results

Contextual Info: Si GEC PLE SS EY SEMICONDUCTORS QS4325-3.3 GP250MHB06S POWERUNE N-CHANNEL IGBT MODULE APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. TYPICAL KEY PARAMETERS 600V ^C E S v C E « a t 2.1V 250A ^ C (C O N T )

Contextual Info: GEC P L E S S E Y S E M I C O N D U C T O R S DS4324-3.1 GP500LSS06S p o w e r l in e n -c h a n n e l ig b t m o d u l e TYPICAL KEY PARAMETERS VCES 600V VCE ial 2.1V W ond 500A APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

DIM200MKS12-A000

Abstract: DS-5552
Contextual Info: DIM200MKS12-A000 DIM200MKS12-A000 IGBT Chopper Module Replaces November 2002, issue DS5552-1.2 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5552-1.2 November 2002 KEY PARAMETERS VCES typ VCE(sat)*

was dual transistor

Abstract: DIM200MBS12-A000
Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM

Contextual Info: JULY 1996 GP200MHB12S ADVANCE ENGINEERING DATA DS4339-4.2 GP200MHB12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 200A IC(CONT) 400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control. ■ UPS.

Contextual Info: JULY 1996 GP1600FSS12S ADVANCE ENGINEERING DATA DS4337-4.2 GP1600FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1600A IC(CONT) 3200A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

GP150MHB16S

Contextual Info: IV II^ T E L GP150MHB16S L_ Powerline N-Channel IGBT Module S E M IC O N D U C T O R . . . , dvance Inform ation Supersedes April 1998 version, DS4131 -6 .6 The GP150MHB16S is a dual switch 1600 volt, robust

Contextual Info: M ITEL GP500LSS06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1998 version, DS4324 - 4.3 The G P 500LS S 06S is a single sw itch 600V, robust n c h a n n e l e n h a n c e m e n t m od e in s u la te d g a te b ip o la r tran sistor IGBT . Designed fo r low p ow er loss, the m odule

Contextual Info: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■

GP600FHB16S

Contextual Info: GP600FHB16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4545 - 2.6 DS4545 - 2.7 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V C E sat , 3.5V 'q c o N T , 600A ' c (PK, 1200A APPLICATIONS • High Pow er Sw itching.

200NH

Abstract: DS4325
Contextual Info: MITEL GP250MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes July 1998 version, DS4325 - 4.3 DS4325 - 4.4 Decem ber 1998 The G P 250M H B 06S is a dual sw itch 600V robust n c h a n n e l e n h a n c e m e n t m od e In su la te d g a te b ip o la r

1kva inverter circuit diagram

Abstract: circuit diagram of 5kva online ups 8kva inverter circuit diagram 3kva UPS charger circuit diagram 2kva ups circuit diagram 2kva inverter circuit diagram inverter 5kva circuit diagram single phase inverter IGBT 3kva 3 phase UPS block WITH CIRCUIT diagram ASE10S1
Contextual Info: TRUE ON LINE UPS MODEL TYPE ASE-H HIGH RELIABILITY FAULT TOLERANT UPS SYSTEM Uninterruptible Power Supply Input ASE-H True On-Line Supporting Method Network All Time Inverter Power Feeding years 19-inch 5Life Rack Rack Mountable of battery unit Output AC100,110,115,120V AC100,110,115,120V

bi-directional switches IGBT

Abstract: DIM200MBS12-A000 7404* 15v
Contextual Info: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information DS5545-1.3 May 2002 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon KEY PARAMETERS VDRM typ VT (max) IC (max) IC(PK) ±1200V 4.3V 200A 400A

AN4502

Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Contextual Info: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the

DIM400LSS17-A000

Contextual Info: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue February 2002, version DS5497-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base DS5497-3.0 March 2002 KEY PARAMETERS VCES typ VCE(sat) *

DS5458

Abstract: DFM300MXS18-A000
Contextual Info: DFM300MXS18-A000 DFM300MXS18-A000 Fast Recovery Diode Module Preliminary Information DS5458-1.1 May 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1800V 2.0V

DIM400LSS17-A000

Contextual Info: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue MArch 2002, version DS5497-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate DS5497-4.1 June 2002 KEY PARAMETERS VCES typ

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

Contextual Info: DIM400LSS17-A000 DIM400LSS17-A000 Single Switch IGBT Module Replaces issue June 2002, version DS5497-4.1 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate FDS5497-5.0 July 2003 KEY PARAMETERS VCES typ

Contextual Info: DIM400LSS12-A000 DIM400LSS12-A000 Single Switch IGBT Module Replaces March 2003, version DS5534-3.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5534-4.0 July 2003 KEY PARAMETERS VCES typ VCE(sat)*

TL024

Abstract: 802C-E53M6 802C-E53M6B-S7 802C-H55M6B 802F-E60M2 802C-J57M18BR 802F-S62PM2-CG 802F-S62P8-CG 802C-E53M6B 802F-E60MS2-N5
Contextual Info: An Investment in Plant Floor Safety 802C Safety Cable Pull Switches 802E Hinge Safety Interlock Switches 802F Safety Interlock Switches   Safety Switches Notes 2 Safety Switches 802C Cable Pull Safety Switches  3. The installation of a stop switch

Contextual Info: @ M ITEL GP400LSS16S Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation DS4987 - 1.3 The GP400LSS16S is a single switch 1600V, robust n channel en han cem ent m ode insulated gate b ipolar transistor IGBT module. Designed for low power loss, the

GP250MHB06S

Abstract: IGBT 3300V 250A
Contextual Info: GP250MHB06S GP250MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4325 -7.0 FEATURES DS4325-7.1 July 2002 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop (max) 350A Isolated Base IC25 ■

GP500LSS06S

Abstract: transistor 600v 500a A50B
Contextual Info: GP500LSS06S GP500LSS06S Single Switch IGBT Module Replaces July 2002 version, DS4324-7.1 FEATURES FDS4324-8.0 July 2003 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat * (typ) ■ Low Forward Voltage Drop Isolated Base IC25 (max) 700A