GG11 Search Results

Contextual Info: MEMS Rotational Rate Sensors GG1178 - Digital or Analog Output Advanced Information Honeywell’s GG1178 family of rotation sensors are highperformance silicon micromachined angular rate sensors for multiple applications. They provide a low noise output signal

TO-3P

Abstract: KSD1417 KSB1022 KSD1413 KSB1023 KSB1098 KSD1589 TIP140 TIP140F TIP145
Contextual Info: SAMSUNG ELECTRONICS INC büE D • 7 ^ b m M E GG1153b b ^ TRANSISTORS ■ SMäK FUNCTION GUIDE 22.4 TO-22CKF Type Transistors lc Condition D w ice Type V ceo NPN PNP lc <A> MIN V CE satXV) Condition TYP Vct (V) Condition hra Vee (V) M AX fl{MHz) Pc lc (A)

GN6020C

Contextual Info: HITACHI / OPTOELECTRONICS 51E B m MMSbaOS GG11023 7‘t‘l • H I T M GN6020C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3P High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage

Contextual Info: SAMSUNG ELECTRONICS INC bGE D • 7^^4142 GG11528 575 « S U C K TRANSISTORS FUNCTION GUIDE 1-4. High Voltage Transistors 1-4-1. SOT-23 Type Transistors Condition Device and Polarity NPN KST42 1D KST43(1E) PNP Vceo (V) lc (A) 300 200 150 140 0.5 0.5 0.5 0.6

Scans-00138031

Abstract: 2SD1774 2SD1774A panasonic 2SD
Contextual Info: Power Transistoi« bT32fl5H GG11277 Dlb • PNCE!SD1774, 2SD1774A 2SD 1774, 2SD1174A Silicon NPN Triple-Diffused Planar Type High DC Current Gain I v , e Package Dimensions Power Amplifier U n it I mm ■ Features 10.5 + 0.5 • High DC current gain (hpF.)

Contextual Info: SAMSUNG ELECTRONICS INC 7=^4142 42E » KM23C4000 GG1115Ô 4 ESSM6K CMOS MASK ROM 4M-Bit 512KX8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 23C 40 00 is a fully static m a sk program m able R O M organized 5 2 4 ,2 8 8 x 8 bit. It is fabricated u sin g

74LS109

Abstract: ttl 74ls109
Contextual Info: SANYO SEMICONDUCTOR CORP b3E D 7^S7D7b GG111Ö3 7T1 « T S A J O r d e r in g n u m b e r : E N 3 9 1 3 MLC74HC109M N o.3913 CMOS H igh-Speed S ta n d ard Logic SA \Y O i Dual J-K Flip-Flop with Set and Reset F e a tu r e s • Dual J-K flip-flop/Falling-edge triggered clock input/A ctive-Low re set input.

GG1178AU04

Abstract: gg1178 down hole MEMS MEMS Filter
Contextual Info: Honeywell MEMS Rotational Rate Sensors GG1178 - Digital or Analog Output Advanced Information Honeywell’s G G 1178 fam ily of rotation sensors are highperformance silicon micromachined angular rate sensors for multiple applications. They provide a low noise output signal

tip32C samsung

Abstract: KSB595 BD241A BD241B BD242A KSB834 KSC1983 KSD880 TIP31A TIP31B
Contextual Info: SAMSUNG ELECTRONICS INC bOE T> • TTbMlME GG11S33 T3T « S U G K TRANSISTORS FUNCTION GUIDE 2.1.5 TO-220 Type Transistors lc Device Type Veto A (V) 3 60 5 7 Condition MIN MAX TIP32A 4 3 10 50 3 0.375 K SD 8 8 0 KSB834 5 0.5 60 200 3 0.3 4 0.5 500 2 0.05

Contextual Info: b3E D LC7215, 7215F, 7215FM GG113bl =ITT ITSAJ SANYO SEMICONDUCTOR C0RP W 3 o o 3a S ilicon-gate CMOS IC 3111 MW/LW PLL Frequency Synthesizer 3584A OVERVIEW PINOUT The LC7215, LC7215F and LC7215FM are phase-locked-loop frequency synthesizers that provide

Contextual Info: N E C ELECTRONICS INC Ifl T'*/3'J5 D E B bM27555 GG11127 7 1 7 — • I MP A 1 4 2 7 H PNP S I L I C O N E P I T A X I A L . P O.WE R T R A N S I S T O R A R R A Y LOW S P E E D SW I T CH I N G D A R L I N G T 0 N DESCRIPTION The u PA1427H is an array of four darlington power transistors. It is

sony capstan motor

Contextual Info: 1312393 GG11122 25fl SONY CX20036 Capstan Motor Drive Description The CX20036 is a bipolar 10 designed for the brushless motor drive of a 3-phase bidirectional conducting system and has the following components: Hole element amp., Conducting angle switching

KSC5036

Abstract: KSC3502 BD139 KSE350 KSC5034 KSA1142 KSA1381 KSA1406 KSC2258 KSC2258A
Contextual Info: SAMSUNG ELECTRONICS INC bOE D • 7 ^ 4 1 4 2 GG11S31 Gb7 HSIIGK TRANSISTORS FUNCTION GUIDE 2. POWER TRANSISTORS 2-1. General Purpose Transistors 2.1.1 TO-126 Type Transistors Device Type Veto N PN A (V) 0.1 180 KSC2682 200 KSC 3502 300 KSC3503 0.1 200 Condition

D2158

Abstract: 2SD2158 2SD2158A 5d215
Contextual Info: Power T ransisto 1,^38054 GG113Ô7 mb • P N C 2 SD2158, 2SD2158A 2SD2158, 2SD2158A Silicon NPN Triple-Diffused Planar Type High DC Current Gain Iife , Power Amplifier ■ Features • High DC current gain (Hfe) • Good linearity of DC current gain (hFE)

schematic diagram cga to vga

Abstract: DD11D1D SCHEMATIC mda VGA board cga ega vga RAMDAC DIP BT477 TTL sync video CGA to vga schematic diagram cga to vga circuit convert ega to vga I334 cga to vga
Contextual Info: UM•■ ■■• ■■ ■■ai i v a n i r à 82C453 Ultra VGA Graphics Controller ■ High Performance VRAM VGA optimized for 800x600 and 1024x768, 16 and 256 color, display resolutions interlaced/non-interlaced ■ 4 VRAMs (256Kx4) support all Super VGA

G1104L

Contextual Info: 1104LS Series Single Color PLCC-2 Type High Reliability type, V-Series Features Package PLCC-2 Bathtub Type. Water clear resin Product features ・Outer Dimension 3.5 x 2.8 x 1.9mm( L x W x H ) ・Wide operation temperature range. Storage Temperature : -40℃～120℃

Contextual Info: Not Recommended for New Design Aug. 1994 Edition 1.0 FUJITSU DATA SHEET MB8 1 4 1 0 0 D -6 0 / - 7 0 CMOS 4M x 1 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 1 bit Fast Page Mode Dynamic RAM The Fujitsu MB814100D is a fully decoded CMOS Dynamic RAM DRAM that contains

DS2165Q

Contextual Info: D S 2165/D S2165Q DALLAS SEMICONDUCTOR D S 2 1 6 5 /D S 2 1 6 5 Q 16/24/32Kbps ADPCM Processor PIN ASSIGNMENT FEATURES • Compresses/expands 64Kbps PCM voice to/from either 32Kbps, 24Kbps, or 16Kbps • Dual, fully independent channel architecture; device

I-CUBE

Abstract: P103t zener diode phc 16 ZENER diode p317 AB P89 zener PLK3210 hk30 transistor 4287 AB zener phc 12 kck 223
Contextual Info: SH5 I-Cube* IQX Family Data Sheet Description Features The IQX family of SRAM-based bit-oriented switching devices is manufactured using a 0.6vim CMOS process. These devices offer clock speed of up to 150 MHz and fastest pin-to-pin delay of 6 ns. • SRAM-based, in-system programmable

BPW84

Abstract: S288P BPW75 BPW87 BPW28 BPW86 LT 5239 H BPW47B BPW41N IR bpw77
Contextual Info: TEL E FU NK EN E L E C T R O N I C 4ME T> m ÛTEOCnti 0D1117D 3 D1ALGG Photo Detectors Phototransistors in Clear Plastic Package Phototransistors with Filter M atched for G a A s IR ED s in Plastic Package Package Type • C h a ra c te ristic s Photo sensitive

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

Contextual Info: PRELIMINARY M IC R O N I 4 MEG X SfcMCONOUCTORMC MT12D436 36, 8 MEG x 18 DRAM MODULE 4 MEG X 36, 8 MEG x 18 DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING • Tim ing 60ns access 70ns access • Packages Leadless 7 2 -pin Leadless 7 2 -pin Leadless 7 2 -pin

Contextual Info: ADVANCE M in P n M I - MT4LC16270 256K X 16 DRAM DRAM 256K x 16 DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply* • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Low power, 0.3mW standby; 165mW active, typical

Contextual Info: FDC37C93XFR SMC ADVANCE INFORMATION STANDARD M IC R O SY ST EM S CORPORATION Plug and Play Compatible Ultra I/O Controller with Fast IR FEATURES ISA Plug-and-Play Standard {Version 1.Oa Compatible Register Set Soft Power Management, SMI Support ACCESS.bus Support