GER400 Search Results

A114F

Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
Contextual Info: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —

GER4007

Abstract: D0204 GEH4001 GER4001 GER4002 GER4003
Contextual Info: HARRIS SEMICOND SECTOR bôE V B 43GE271 0GSD323 14=5 « H A S G É H 4 0 Ù 1 th ru h a r r is GER4007 S E M I C O N D U C T O R 1A, 50V - 1000V Diodes December 1993 Features Package JE D E C STYLE DO-204 TOP VIEW • High-Temperature Metallurgically Bonded, No Com­

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

JANTX 1N4001

Abstract: 1N4001.4007 A15E A114A a115F A115A GER4007 ln4001 A114C A14P
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 15 0 0 1000 900 600 « 700 !j 600 § 500 s z 400 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 1 0 0 14 0 2 5 0 4 0 0 750 IK A V ERA G E C U R R E N T -A M P E R ES S T A N D A R D RECTIFIERS SELECTOR GUIDE

A14A

Abstract: A14U A14F A14B A115F A115D A115C GE A14A GER4007 A115B
Contextual Info: REC TIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE REC TIFIERS

diode A14A

Abstract: diode A14A surface mount LN5061 A14P Rectifier A14P A14B LN5060 A14F DT230 A14D 1n5060
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

amper 1N5061

Abstract: LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B
Contextual Info: FAS T R E C O V E R Y R EC TIFIER S S E LE C T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R EC TIFIER S S E LE C T O R GUIDE

ge a15a

Abstract: A15F A115E GER4007 A115F A14F DT230 A15A
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

IN4247

Abstract: A115B IN4246 in4248 A115D A14A-P A115F A115C GER4007 A14F
Contextual Info: FAST R E C O V E R Y RECTIFIERS S ELEC TO R GUIDE 2000 1500 1000 900 600 « 700 !j 600 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELEC TO R GUIDE

Contextual Info: Providing Electronic Solutions EV Relay Technical Data Willow Technologies Limited Unit 3, Borers Yard, Borers Arms Road, Copthorne, West Sussex. RH10 3LH. Tel: +44 0 1342 717102 / Fax: +44 (0) 1342 717014 sales@willow.co.uk / www.willow.co.uk Contents Selection Guide

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

A115B

Abstract: A115M A115D ge a115d a115e A115F A115C GER4007 A14F DT230
Contextual Info: R E C T IF IE R S rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE

diode A14A

Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

IRF 1640

Abstract: GD4049B IRF 1640 G GAL16V8-20LNC gal22cv10 HA2-2725-5 HA2-2655-5 HA2-2650-2 irf 2030 GAL22CV10-10LVC
Contextual Info: • M fr Qty/Note 7 A0 D3 M5 000035fl ITS ■ Part Num ber M fr Qty/Note Part Num ber Mfr SM C 6658 GAL20V8QS-10LV! NSC 1995 HA1-2541-7 H AR 460 SMC 13390 GAL20V8QS-15LNC NSC 15169 HA1-2541/883 H AR 387 SMC 401 GAL20V8QS-15LVC NSC 1031 HA1-2655-5 H AR 210

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5