GE SB1 Search Results

Electroswitch series 24

Abstract: Electroswitch series 24203B electroswitch 2438D 24204B electroswitch electroswitch 74202B 24203B Electroswitch 2404C Electroswitch 24206B electroswitch 24204
Contextual Info: 06-464 Cross Reference List 5/1/07 2:46 PM Page 1 CROSS REFERENCE LIST GE Series SB1 to Electroswitch Series 24 SWITCHES AND RELAYS Use this cross reference list to identify the correct Electroswitch Series 24 switch to replace a GE SB1 Series switch. Don’t see your GE Series switch in the list – contact

Contextual Info: SB120 THRU SB160 MINIATURE SCHOTTKY BARRIER RECTIFIER VOLTA GE RANGE - 20 to 60 Volts CURRENT -1.0 Ampere FEATURES DO-2Q4AL 1. 0 2 5 .4 MIN . 107 ( 2 ,7 ) .080 ( 2 .0 ) . 205 ( 5 .2 ) . 160 ( 4 .1 ) _ t _ 1.0 ( 2 5 .4 ) WIN •034 ( . 8 6 ) .028 (. 7 1 )

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.

Contextual Info: HOLTEK r r HT7501 Clinical Thermometer Features • • • • • • • • • Single-chip CM O S construction Single 1.5V battery operation M easurem en t ran ge: +32.00°C —1-43.00°C M easurem en t accuracy: ±0.1°C Resolution: 0.01°C Auto self-test

OW14

Contextual Info: fax id: 1082 CY7C1049 512K x 8 Static RAM is provided by an active LOW chip enable CE , an active LOW output enable (OE), and three-state drivers. Writing to the de­ vice is accomplished by taking chip enable (GE) and write en­ able (WE) inputs LOW. Data on the eight I/O pins (l/O0 through

P-8388

Contextual Info: MITSUBISHI LSIs P R E L IM IN A R ^ ^ . ± nt Ä c U o % a n ge. M5M29KB/T800AVP 8,388,608-BIT 1048,576-WORD BY 8-BIT 1524,288-WORD BY16-BIT CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29KB/T800AVP Is 5.0V-only high speed 8,388,608-bit CMOS boot block Flash Memories with

wiom

Abstract: wiom DC SB156 SS101
Contextual Info: BRIIXIE RECTIFIERS 1A • 1.5A • 2A • 3A • 4A • 6A • 8A • 10A • 15A • 26A M aximum Peak Reverse V o lta ge Max A vg Rect C urrent @ H alf-W ave Res Load 60Hz M axim um Forward Peak Surge C urrent @ 8 3ms Superim posed M axim um Reverse C urrent

marking w25 SMD

Abstract: TRANSISTOR SMD MARKING CODE W25 smd marking g23 SMD CODE w25 SMD MARKING CODE E1H smd w25 66 2310 dhi TOP 242 PN SMD TRANSISTOR MARKING 9b marking g23 SMD
Contextual Info: Da ta Sh ee t, D S 1, D ec em be r 20 01 ABM 3G A T M B uf f e r M a na ge r P XF 4 33 3 V e r s i on 1 . 1 W ir ed Co m mu n ic a ti o n s N e v e r s t o p t h i n k i n g . Edition 2001-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

PCR 406 J

Abstract: marking w25 SMD transistor pcr 406 TRANSISTOR SMD MARKING CODE W25 SMD TRANSISTOR MARKING P2 PCR 406 J transistor smd marking K23 transistor pcr 405 Motorola transistor smd marking codes marking g23 SMD
Contextual Info: Da ta Sh ee t, D S 2, D ec em be r 20 01 A B M P r e mi um A T M B uf f e r M a na ge r P XF 4 33 6 V e r s i on 1 . 1 W ir ed Co m mu n ic a ti o n s N e v e r s t o p t h i n k i n g . Edition 2001-12-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

transistor FB 260N

Abstract: AC122 AC122-30 2SA479 2SA208 GT123 2N384 AF185 SFT155 XA131
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1103

Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

AC122-30

Abstract: AF185 2N625 2SA479 2N3074 2SA301 SFT155 XA131 3SJ11 2sb48
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: Preliminary KM23V81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 8 1 0 0 D (E )T is a fu lly static m ask p ro gra m m a ble S w itch a b le organ izatio n 1,048,576 x 8 (b yte m ode) 5 24,288 x 1 6(w ord m ode)

Contextual Info: Preliminary KM23V16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 1 6 0 0 0 C (E )T is a fu lly static m ask pro gra m m a ble S w itch a b le organ izatio n 2,0 97,15 2 x 8 (b yte m ode) 1,048,576 x 1 6(w ord m ode)

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

8512A

Contextual Info: HM62V8512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-642 Z Preliminary Rev. 0.0 Sep. 30, 1996 Description The Hitachi HM62V8512A is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 |lm Hi-CMOS process

Contextual Info: HN62448 Series 524288-word x 16-bit / 1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-397A Z Rev. 1.0 Jun. 13, 1995 Description The Hitachi HN62448 is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by 16-bits or as 1048576-words by 8-bits. Realizing low power consumption, this memory is allowed for battery

Contextual Info: HM671400H Series 4,194,304-words x 1-bit High Speed Static Random Access Memory HITACHI ADE-203-086G Z Rev. 8 Aug. 28, 1996 Features • 4194304-words x 1 bit organization • Directly TTL compatible input and output • +5.0 V Single Supply • Completely static memory

Contextual Info: Preliminary KM23V32000B E TY/KM23S32000B(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 4 ,1 9 4 ,3 0 4 x 8(b yte m ode) 2,0 97,152 x 16(w ord m ode) Fast access tim e Random A ccess T im e

Contextual Info: KM23V4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 26 2,14 4 x 16 bit organ izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +3.3V C urrent con sum p tion O perating : 25m A (m ax.) S tandby iS O S ^m a x.)

Contextual Info: CXK5V8257BTM/BYM/BM -70LL/10LL SO NY 32,768-word x 8-bit High Speed CMOS Static RAM Description The CXK5V8257BTM/BYM/BM is a 262,144-bit high speed CMOS static RAM organized as 32,768-words-by8-bits. A polysilicon TFT cell technology realizes extremely low stand-by current and higher data retention stability.

ne 5555 timer

Contextual Info: Lj 3 E ì> ñin233 ÜG03Ô2E S14 « S E E SEEÛ TECHNOLOGY INC Technology, Incorporated 1024K High Speed EEPROM Ju ly 1992 Features • Military, Extended and Commercial Temperature Rangea • -S 5°C to +125°C Operation Military • -4 0 °C to +85°C Operation (Extended)

Contextual Info: FLASH MEMORY KM29W8000T, KM29W8000IT Document Title 1M X 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date Rem ark 0.0 D ata S h e e t 1997 A pril 10th 1997 A d va n ce 1.0 D ata S h e e t 1998 A pril 10th 1998 P relim in ary J u ly 14th 1998