FLL400 Search Results

Contextual Info: FLL400IP-3 fujÎt su L-Band Medium & High Power GaAs FETs FEATURES • • • • Push-Pull Configuration High PAE: 43% Typ. Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that

Contextual Info: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V

FLL400IP-2

Abstract: C4727 fujitsu gaas fet "class AB Linear" 50mhz
Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V

Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V

High Power GaAs FET

Abstract: GaAs FET 15A fll400ik-2c ED-4701 RM1101
Contextual Info: FLL400IK-2C High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=46.0dBm Typ. ・High Gain: G1dB=13.0dB(Typ.) ・High PAE: ηadd=45%(Typ.) ・Broad Band: 2.11~2.17GHz ・Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited

fujitsu gaas fet

Abstract: GAAS FET AMPLIFIER High Power GaAs FET Eudyna Devices ED-4701 FLL400IK-2
Contextual Info: FLL400IK-2 High Voltage - High Power GaAs FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=12.0dB(Typ.) ・High PAE: ηadd=46%(Typ.) ・Broad Band: 1.8~2.0GHz ・Hermetically Sealed Package DESCRIPTION The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited

GSC371BAL2000

Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Contextual Info: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band

FLL400IP-3

Abstract: eudyna GaAs FET Amplifier
Contextual Info: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V

1 928 498 056

Abstract: FLL400IP-3 s-band 50 Watt power amplifier 1 928 498 016 1 928 498 014
Contextual Info: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V

Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V

FLL400IP-3

Abstract: 1 928 498 167
Contextual Info: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V

FLL400IP-2

Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V

Contextual Info: FLL400IP-3 _ FEATURES • • • • • L-Band Medium & High Power GaAs FET Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V

Eudyna Devices power amplifiers

Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V

FLL400IP-3

Contextual Info: FLL400IP-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 2300 to 2500 MHz. Suitable for class A operation at 10V and class AB operation at 12V

Eudyna Devices power amplifiers

Abstract: C4727 FLL400IP-2 eudyna GaAs FET Amplifier
Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V

C4727

Abstract: FLL400IP-2 eudyna GaAs FET Amplifier
Contextual Info: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 35W Typ. High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.