FPD6836
Abstract: Filtronic* FPD6836 l0241 Modelling Report FPD6836 Filtronic Components MARK 8E diode Modelling TOM2
Contextual Info: FPD6836 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD6836 TOM3 and TOM2 Models Version 1.0 - Mark Holm Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. Mark Holm 1 Filtronic Confidential FPD6836 TOM3 and TOM2 Models 24/01/2005
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fpd683628ghz25ghzfiltronic* fpd6836+6l0241modelling report fpd6836filtronic componentsmark 8e diodemodellingtom2
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UCD CLASS D
Abstract: 2391.0 remote control with 4 channels substitution manual transistor manual substitution ST260B SIGTEK
Contextual Info: INSTALLATION AND OPERATIONS MANUAL for the ST260B Upstream and Downstream DOCSIS RF Tracer Version 2.06.0000 December 2, 2002 Filtronic-Sigtek, Inc. 9075 Guilford Road, Suite C-1 Columbia, MD 21046 USA This Page Intentionally Left Blank ST-260B Installation and Operations Manual
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st260bst-260bucd class d2391.0+4remote control with 4 channelssubstitution manualtransistor manual substitutionsigtek
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FPD3000
Abstract: 9809E DSA002831
Contextual Info: FPD3000 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD3000 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD3000 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD3000 discrete p-HEMT device. The
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FPD1500
Contextual Info: FPD1500 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD1500 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD1500 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD1500 discrete p-HEMT device. The
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FPD750
Abstract: FPD7612 417E TOM2 FILTRONIC modeling report Modelling
Contextual Info: FPD7612 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD7612 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD7612 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD7612 discrete p-HEMT device. The
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FPD200
Contextual Info: FPD200 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD200 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD200 discrete p-HEMT device. The
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FPD750
Abstract: LAMBDA alpha 400 FILTRO 1000pF-0
Contextual Info: FPD750 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD750 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD750 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD750 discrete p-HEMT device. The
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fpd75040ghz05ghzlambda alpha 400+2filtro1000pf-0
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SSG 23 TRANSISTOR
Abstract: 1P503 FPM2750QFN Filtronic Components
Contextual Info: FPM2750QFN Datasheet v2.5 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE PACKAGE: FEATURES: • • • • • • • Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Combined IP3: 36dBm (100mA)
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fpm2750qfn1850mhz36dbm100ma+723dbm2002/95/ec22a114mil-std-1686ssg 23 transistor1p503filtronic components
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FPD750
Abstract: SSG 23 TRANSISTOR Filtronic Components FPM2750QFN 1P503 SSG TRANSISTOR Filtronic Compound Semiconductors 36347
Contextual Info: FPM2750QFN Preliminary Datasheet v2.4 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE FEATURES: • • • • • • • PACKAGE: Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Output IP3: 32dBm (40mA); 36dBm (100)
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fpm2750qfn1850mhz32dbm36dbm+1218dbm2002/95/ec22a114mil-std-1686mil-hdbk-263fpd750ssg 23 transistorfiltronic components1p503ssg transistorfiltronic compound semiconductors36347
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FPM2750
Abstract: CAP-22nF-0603-10 Filtronic Components
Contextual Info: FPM2750QFN Datasheet v3.0 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE PACKAGE: FEATURES: • • • • • • • Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Combined IP3: 36dBm (100mA)
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FILTRONIC CROSS REFERENCE
Abstract: SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant
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fpd1500dfn1850mhzmil-std-1686mil-hdbk-263+9eb1500dfn-bb900mhzeb1500dfn-bafiltronic cross referencessg 23 transistorfpd750sot89transistor bc 135transistor bc 157filtronic compound semiconductors
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BC 148 TRANSISTOR DATASHEET
Abstract: MIL-HDBK-263 FILTRONIC CROSS REFERENCE SSG 23 TRANSISTOR TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89
Contextual Info: FPD1500DFN Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 RoHS compliant
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fpd1500dfn1850mhzmil-std-1686mil-hdbk-263+10eb1500dfn-bb900mhzeb1500dfn-ba85ghzbc 148 transistor datasheetfiltronic cross referencessg 23 transistortransistor bc 135transistor bc 157fpd750sot89
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high power transistor s-parameters
Contextual Info: FPD750SOT343 Datasheet v2.2 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES 1850MHZ : • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)
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fpd750sot3431850mhz2002/95/eceb750sot343-bb+6eb750sot343-baeb750sot343-bc22-a114eb750sot343-beeb750sot343-bghigh power transistor s-parameters
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2S110
Abstract: transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E
Contextual Info: FPD750SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant
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FMA3051
Abstract: FMA3051-000
Contextual Info: FMA3051 Pilot Datasheet v2.1 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 35 dB Gain 30 dBm P1dB Output Power at 6 V, 1.2 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5 x 3 sq. mm die D1 D2 D3 D4
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10ghz optical modulator driver
Abstract: 10ghz modulator driver 10ghz optical modulator Filtronic optical modulator driver MAX002 mach-zender Filtronic Components
Contextual Info: Optical Communications MAX002 Modulator Driver Amplifier Applications • • OC-192 Transmission Systems Drives EA or MZM Features • • • • • • • Miniature Size High Output Power Ultra Broadband Flat Gain Characteristic MMIC Monitor Output Gain and Offset Control
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max002oc-19230khz15ghz+910ghz/-25ps10ghz optical modulator driver10ghz modulator driver10ghz optical modulatorfiltronicoptical modulator drivermach-zenderfiltronic components
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ims pcb
Contextual Info: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FMA3025SOT89
Abstract: 900MHZ 09101
Contextual Info: FMA3025SOT89 LOW NOISE HIGH LINEARITY PACKAGED MMIC • • • • • RoHS PACKAGE: FEATURES • V2.2 300-4000MHz 24 dBm P1dB 15 dB Gain @ 0.9GHz 42 dBm OIP3 2.1 dB Noise Figure @ 0.9GHz Single Supply +5V, 150mA GENERAL DESCRIPTION: The FMA3025SOT89 is a low cost packaged
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SSG 23 TRANSISTOR
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
Contextual Info: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)
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fpd1500dfn1850mhz2002/95/ecmil-std-1686+10mil-hdbk-263eb1500dfn-bb900mhzeb1500dfn-bassg 23 transistorbc 148 transistor datasheettransistor bc 135transistor bc 157fpd750sot89filtronic compound semiconductors
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FPD6836SOT343
Abstract: FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423
Contextual Info: FPD6836SOT343 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • 0.5 dB Noise Figure at 25% Bias 19 dBm Output Power (P1dB) 19 dB Small-Signal Gain (SSG) 32 dBm Output IP3 at 50% Bias RoHS compliant (Directive 2002/95/EC)
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stepper
Abstract: TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750DFN FPD750SOT89 MIL-HDBK-263
Contextual Info: FPD750DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency
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Radar Warning Receiver
Abstract: radar system with circuit diagram diagram radar circuit Introduction to Radar Warning Receiver Types of Radar Antenna radar block diagram x band radar RF receiver Ground Radar diagram radar warning receiver data 4 way video distribution amplifier
Contextual Info: Man Portable Radar Warning Receiver For Covert and U.A.V. Applications Figure 1 RWR Unit Introduction The unit is designed for Radar Warning Receiver RWR applications where small size and low power consumption are of prime importance, with filtering, amplification, detection and frequency
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radar warning receiverradar system with circuit diagramdiagram radar circuitintroduction to radar warning receiver+6types of radar antennaradar block diagramx band radar rf receiverground radar diagramradar warning receiver data4 way video distribution amplifier
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SMD-B 053
Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0
Contextual Info: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:
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transistor marking code 1325
Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
Contextual Info: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz
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