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    EB750SOT89 Search Results

    EB750SOT89 Datasheets Context Search

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    2.4GHz amplifier schematic

    Abstract: FPD750SOT89 EB750SOT89BG 26GHz LNA
    Contextual Info: EB750SOT89BG FPD750SOT89 2.4GHz to 2.6GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.4 24.3 15.4 0.95 34.0 2.5 24.3 15.2 0.95 35.0 5V, 100mA 2.6 24.4 15.0 1.0 34.0 DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		EB750SOT89BG FPD750SOT89 100mA FPD750SOT89; 30mil 31mil 2.4GHz amplifier schematic EB750SOT89BG 26GHz LNA PDF

    FPD750SOT89

    Contextual Info: EB750SOT89BA FPD750SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • 24dBm Output Power • 17.5dB Gain ¥ 0.7dB Noise Figure ¥ 35dBm IP3 @ 10dBm Pout per Tone ¥ Bias 5V, 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, low noise amplifier. It is reactively


    Original     		EB750SOT89BA FPD750SOT89 85GHz 24dBm 35dBm 10dBm 100mA 85GHz. FPD750SOT89. 30mil PDF

    LL1005-FH4N7S

    Abstract: 56348 LP750SOT89 RO4003 RO-4003 293D105X0035B2T LL1005-FH2N7S LL1608-FH27NK 2064-0000-00 DSS-044
    Contextual Info: EB750SOT89AA LP750SOT89 1.85 GHZ LNA EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 0.65 dB Noise Figure 19 dBm Output Power 35 dBm Third-Order Intercept Point SOT89 Surface Mount Package EB750SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz and has an representative noise figure of


    Original     		EB750SOT89AA LP750SOT89 EB750SOT89AA LP750SOT89; RO4003 DOC-009 DSS-044 LL1005-FH4N7S 56348 RO-4003 293D105X0035B2T LL1005-FH2N7S LL1608-FH27NK 2064-0000-00 DSS-044 PDF

    microstrip

    Abstract: FPD750SOT89 Transistor Z14 RO4003 w20220 microstrip board
    Contextual Info: EB750SOT89AH FPD750SOT89 3.5GHz EVALUATION BOARD • • • • ¥ FEATURES 22dBm P1dB 14dB Gain 0.75dB Noise Figure 40dBm OIP3 Measured @ 11dBm per tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		EB750SOT89AH FPD750SOT89 22dBm 40dBm 11dBm 100mA FPD750SOT89. microstrip Transistor Z14 RO4003 w20220 microstrip board PDF

    FPD750SOT89

    Contextual Info: EB750SOT89BB FPD750SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 23.5dBm Output Power • 23dB Gain ¥ 0.6dB Noise Figure ¥ 34dBm OIP3 measured at 10dBm per tone ¥ Bias Vd = 5V, Id = 100mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		EB750SOT89BB FPD750SOT89 34dBm 10dBm 100mA, FPD750SOT89; 30mil LL1608 PDF

    FPD750SOT89

    Abstract: 2.2GHz FPD750
    Contextual Info: EB750SOT89BC FPD750SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz 1.85 2.0 2.2 P1dB (dBm) 20.0 20.0 23.0 SSG (dB) 17.0 16.5 16.0 N.F. (dB) 0.7 0.7 0.75 OIP3 (dBm)* 33.5 33.7 34.5 Bias 5V, 50mA *measured with two tones 5MHz apart and Pout = 9.0dBm per tone


    Original     		EB750SOT89BC FPD750SOT89 FPD750SOT89. 24dBm 85GHz 100mA. 31mil 2.2GHz FPD750 PDF

    ro4003

    Abstract: 802.11a Amplifier roger rogers FPD750SOT89
    Contextual Info: EB750SOT89AJ FPD750SOT89 5.6GHz PA EVALUATION BOARD FEATURES • • • • ¥ 24dBm P1dB 11.5dB Gain 1.5dB Noise Figure -46dBc IMD @ 12dBm Pout per Tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It has a distributed


    Original     		EB750SOT89AJ FPD750SOT89 24dBm -46dBc 12dBm 100mA 15GHz 85GHz. FPD750SOT89; 20mil ro4003 802.11a Amplifier roger rogers PDF

    Transistor BC 1078

    Abstract: stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E TL11 TL13
    Contextual Info: FPD750SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 FPD750SOT89E EB750SOT89 Transistor BC 1078 stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89E TL11 TL13 PDF

    2S110

    Abstract: transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E
    Contextual Info: FPD750SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 2S110 transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89E PDF

    FPD750SOT89

    Abstract: transistor Bc 574 FPD750SOT89E TL11 TL13 TRANSISTOR bc 657
    Contextual Info: FPD750SOT89 Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 FPD750SOT89E EB750SOT89 transistor Bc 574 FPD750SOT89E TL11 TL13 TRANSISTOR bc 657 PDF

    transistor bc 647

    Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD750SOT89 25dBm 39dBm FPD750SOT89 mx1500Î FPD750SOT89E: FPD750SOT89E FPD750SOT89CE EB750SOT89CE-BC transistor bc 647 PDF

    Transistor BC 1078

    Abstract: FPD750SOT89CE FPD750SOT89 TRANSISTOR 8550, SOT89
    Contextual Info: FPD750SOT89CE FPD750SOT89 CE Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		FPD750SOT89CE FPD750SOT89 25dBm 39dBm FPD750SOT89CE 25mx1500m FPD750SOT89CE: EB750SOT89CE-BC FPD750SOT89CESR Transistor BC 1078 FPD750SOT89 TRANSISTOR 8550, SOT89 PDF

    Transistor BC 1078

    Abstract: 2S110 FPD750SOT89 FPD750SOT89E transistor bc 647
    Contextual Info: FPD750SOT89 Datasheet 3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 Transistor BC 1078 2S110 FPD750SOT89E transistor bc 647 PDF