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    bts 308 Datasheets

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    ADS54T04IZAY Texas Instruments 2-ch 500MSPS BTS Feedback and Receiver IC 196-NFBGA -40 to 85 Visit Texas Instruments Buy
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    Infineon Technologies AG BTS3080TFATMA1

    IC PWR SWITCH N-CHAN 1:1 TO252-3
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    Infineon Technologies AG BTS3080EJXUMA1

    IC PWR SWITCH N-CHAN 1:1 TDSO-8
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    Infineon Technologies AG BTS3080TFDEMOBOARDTOBO1

    BTS3080TF DEMOBOARD
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    Infineon Technologies AG BTS3080EJDEMOBOARDTOBO1

    BTS3080EJ DEMOBOARD
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    Infineon Technologies AG BTS308 E3059

    IC PWR SWITCH N-CHAN 1:1 TO220-5
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    bts 308 datasheet (18)

    Part ECAD Model Manufacturer Description Type PDF
    BTS308 Infineon Technologies High Side Switches Original PDF
    BTS 308 Infineon Technologies Power, Smart High side Power Switch Original PDF
    BTS308 Siemens Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown) Original PDF
    BTS308 Siemens TEMPFET - Smart Power Switches Scan PDF
    BTS3080EJDEMOBOARDTOBO1 Infineon Technologies BTS3080EJ DEMOBOARD Original PDF
    BTS3080EJXUMA1 Infineon Technologies Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC LOW SIDE PWR SWITCH TDSO-8 Original PDF
    BTS3080TFATMA1 Infineon Technologies Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC LOW SIDE PWR SWITCH TO252-3 Original PDF
    BTS3080TFDEMOBOARDTOBO1 Infineon Technologies BTS3080TF DEMOBOARD Original PDF
    BTS308E3043 Infineon Technologies Smart Highside Power Switch Original PDF
    BTS308-E3043 Infineon Technologies Power management, Smart Highside Power Switch Original PDF
    BTS308-E3043 Siemens TEMPFET - Smart Power Switches Scan PDF
    BTS308 E3059 Infineon Technologies Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC SWITCH N-CH HI SIDE TO220-5 Original PDF
    BTS308E3059 Infineon Technologies PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), IC SWITCH N-CH HI SIDE TO220-5 Original PDF
    BTS308E3062A Infineon Technologies Smart Highside Power Switch Original PDF
    BTS308 E3062A Infineon Technologies Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC SWITCH SMART HISIDE TO220AB-5 Original PDF
    BTS308E3062A Infineon Technologies PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), IC SWITCH SMART HISIDE TO220AB-5 Original PDF
    BTS 308 E3062A Infineon Technologies Power, Smart High side Power Switch, Tape and Reel Original PDF
    BTS308-E3062A Siemens TEMPFET - Smart Power Switches Scan PDF

    bts 308 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2001 - transistor sc 308

    Abstract: E3062A 410E2 BTS308 BTS410H2 E3043 E3062
    Text: PROFET® BTS 308 Smart Highside Power Switch Features Product Summary Overvoltage protection , -Oct-01 BTS 308 Pin Symbol Function 1 GND - Logic ground 2 IN I Input , ): Page 2 RthJC RthJA 2003-Oct-01 BTS 308 Electrical Characteristics Parameter and Conditions , -Oct-01 BTS 308 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 24 V unless otherwise specified , Page 4 2003-Oct-01 BTS 308 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 24 V


    Original     		PDF O-220AB/5 2003-Oct-01 transistor sc 308 E3062A 410E2 BTS308 BTS410H2 E3043 E3062

    fet sm 367

    Abstract: No abstract text available
    Text: ) protection PROFET® BTS 308 Product Summary Overvoltage protection Operating voltage On-state resistance , 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S 0 Function Logic ground BTS 308 Input , 24 V unless otherwise specified BTS 308 Symbol min | Values typ | max Unit Load , specified BTS 308 Symbol min | Values ty p Unit max Protection Functions Initial peak short , SIEMENS Param eter and Conditions at 7] = 25 °C, l/bb = 24 V unless otherwise specified BTS 308


    OCR Scan     		PDF E3043 E3043 fet sm 367

    1997 - transistor sc 308

    Abstract: 410E2 BTS308 BTS410H2 E3043 E3062 E3062A
    Text: PROFET® BTS 308 Smart Highside Power Switch Features Product Summary Overvoltage protection , 12.96 BTS 308 Pin Symbol Function 1 GND - Logic ground 2 IN I Input , 2.5 75 K/W BTS 308 Electrical Characteristics Parameter and Conditions Symbol at Tj = , =-40.+150°C: 4), V =5 V Operating current (Pin 1) IGND IN 2) Values min typ max mA BTS 308 , Semiconductor Group 4 BTS 308 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 24 V unless


    Original     		PDF O-220AB/5 components13) systems14) transistor sc 308 410E2 BTS308 BTS410H2 E3043 E3062 E3062A

    gk 67

    Abstract: No abstract text available
    Text: ® BTS 308 Product Summary Overvoltage protection Operating voltage On-state resistance Load current , , low on failure Output to the load BTS 308 Input, activates the power switch in case of logical , unless otherwise specified BTS 308 Symbol min Values typ max Unit Protection Functions , SIEMENS Parameter and Conditions at 7 1 = 25 °C, H * = 24 V unless otherwise specified BTS 308 , 366 SIEMENS Inductive and overvoltage output clamp GND disconnect IN Vbb PROFET OUT BTS 308


    OCR Scan     		PDF

    siemens profet overview

    Abstract: transistor SMD t34 transistor sc 308 235L 410E2 BTS308 BTS410H2 E3043 E3062 E3062A
    Text: SIEMENS aaasbos oo^tíD MS2 PROFET® BTS 308 Product Summary Overvoltage protection Vbb(AZ) 60 V , ICminer.com Electronic-Library Service CopyRight 2003 ■flc!3S ti OS OG^BbSS T34 ■SIEMENS _ BTS 308 Truth Table Input- Output Status level level BTS 308 Normal L L H operation H H Open load L »> L H H , BTS 308 Inductive and overvoltage output clamp 23 5Z 4: GND disconnect I _ _ GND » PROFET| WD J Won , SIEMENS BTS 308 Vbb disconnect with charged external inductive load If other external Inductive toads l


    OCR Scan     		PDF systems14) siemens profet overview transistor SMD t34 transistor sc 308 235L 410E2 BTS308 BTS410H2 E3043 E3062 E3062A

    1997 - BTS 129

    Abstract: BTS 240 tle 4214 BSP 452 bts 550 BTS 721-L1 BTS 740 s2 bts555p bts 2 2 2 N1 5226
    Text: Channel 5000 BTS 308 BTS 100 250 BTS 307 220 4 Channel BSP 350 300 2 Channel , 2 x 350 2 x 200 TLE 5226 G TLE 5227 G 250 TLE 4224-2 200 BTS 110 170 150 BTS 113 A BTS 112 A 120 BTS 115 A BTS 117/917 BTS 120, 121 A BTS 114 A 100 60 BTS 131, 132 50 BTS 130, 129 BTS 133/933 28 BTS 140 A BTS 141/ 941 18 TLE 5224 G2 BTS 149/949 BTS 240 A in Bipolar Technology (DOPL) IL (sat) (mA) 1 Channel 2 Channel 2 x


    Original     		PDF 410x2 432x2 442x2 BTS 129 BTS 240 tle 4214 BSP 452 bts 550 BTS 721-L1 BTS 740 s2 bts555p bts 2 2 2 N1 5226

    transistor Bts 240a

    Abstract: BTS 621 L1 BSP550 BTS308 bts610l1 5227-G 4224s2 POWER SUPPLY BTS SIEMENS BTS712 siemens scr
    Text: Electrostatic discharge (ESD) protection Type BTS 307 BTS 308 BTS 409 L1 L1 BTS 410 D2 D2 BTS 410 E2 E2 BTS 412 , types_ _ Type BTS 114A BTS 130 BTS 140A BTS 240A 50 50 ^D S ^ D S (O N ) m a i - , [A] 17 27 42 58 12 27 (1 ). (2 ) (1 ), (1 ). (2 ) (2 ) (3) BTS 112A BTS 129 60 60 150 50 2.5 7.5 (1 ). (2 ) 56 65 (1), (2) BTS 110 BTS 120 100 100 200 100 , channel) Type [V] BTS 115A BTS 131 BTS 113A BTS 132 50 50 ^ D S (O N ) m ax -IS O -M O S (m a x


    OCR Scan     		PDF P-T0220-3-1 P-T0220-3-45 O-220 E3045) P-T0218-3-1 P-T0220-5-3 O-218AA) P-T0220-5-43 transistor Bts 240a BTS 621 L1 BSP550 BTS308 bts610l1 5227-G 4224s2 POWER SUPPLY BTS SIEMENS BTS712 siemens scr

    1997 - transistor Bts 240a

    Abstract: zenerdiode 218 bts 425 l1 BSP450 BSP 452 BTS 130 BTS 307 BTS 430 E2 BTS 121A bts 610 l1
    Text: 250 1.7 - (4), (5), (6) 348 BTS 308 > 60 300 1.3 - (4), (5), (6) 361 , Selection Guide - High Side Switches Function Table Devices 100 BTS ./ BSP. 307 707 308 , Type Package Page RDS (ON) max ID - ISO ID - MOS(max) [V] BTS 114A VDS [m] [A] [A] 50 100 3.8 17 (1), (2) 20 50 7.5 27 (1), (2) 29 BTS 130 BTS 140A 50 28 13.5 42 (1), (2) 38 BTS 240A 50 18 21 58 (3


    Original     		PDF O-220 P-TO220-3-45 E3045) P-TO218-3-1 O-218 P-TO220-5-3 P-TO220-5-43 transistor Bts 240a zenerdiode 218 bts 425 l1 BSP450 BSP 452 BTS 130 BTS 307 BTS 430 E2 BTS 121A bts 610 l1

    zenerdiode 218

    Abstract: BTS712
    Text: Type L o g ic V e r s io n B T S 305 B T S 306 BTS 307 BTS 308 B T S 4 0 9 L1 B T S 4 1 0 D2 B T S 410 , ENS Function Table Devices BTS ./B S P . 100 305 306 307 707 308 412 Selection Guide - High , (iiw.) Package [V] B T S 114 A B T S 130 B T S 140A BTS 240A 50 50 50 50 [m n ] 100 50 28 18 , Package [A] 35 70 110 120 (4). (5), (6) (4), (5), (6) (4 ), (5), (6) (4), (5), (6) [V] BTS917 BTS 933 , Switches O n e c h a n n e l lo w s id e s w itc h e s D e v ic e s BTS 1 14A 130 140 A 240A 112A 129


    OCR Scan     		PDF P-T0220-3-1 O-220 P-T0220-3-45 E3045) P-T0218-3-1 O-218 P-T0220-5-3 P-T0220-5-43 zenerdiode 218 BTS712

    2003 - TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Text: R BTS 308 BTS 307 Page 2 Channel 200 BTS 410 E2 BTS 410 F2 BSP 452 BTS 409 L1 BSP , 17 Automotive Transceivers BTS 4140 N BSP 742 R 4) BSP 742 T 4) BTS 308 BTS 307 BTS 410 , ) two level BTS 4140 BTS 4880 q BTS 4141 4142 BTS 307 707 BTS 308 R BTS , 13 13 13 27 TLE 6215 G TLE 6214 L BTS 34081) BSP 75 N1) BTS 3410 G1) BSP 761) BTS 3110 N2) BSP 771) BTS 1172) BTS 118 D1) BTS 3118 D2) BTS 3118 N2) BSP 781) BTS 1332) BTS 134 D1


    Original     		PDF B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519

    2006 - PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: No file text available


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    2005 - BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: No file text available


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    1997 - diode zener ZL 7

    Abstract: BTS432F BTS542D BTS 640S2 S BTS432E 409L1 diode zener ZL 7.5 BTS542 BTS 542D BTS432D2
    Text: fully protected R(GND) BTS 307 / 707 / 308 X X X X BTS 409L1 X X X X BTS 410x / 412B X BTS 410x2 / 412B2 X X X BTS 432x / 542x X X BTS 432x2 , free-wheeling diode as shown in Fig. 7.5. The figure shows a dualchannel switch ( BTS 611L1 . BTS 621L1). The , than through the power transistor. Chip-on-Chip PROFET with GND-referenced clamping For types BTS 432D/E/F and BTS 542D/E, Vbb must be clamped by means of D1 (Fig. 7.8). S S Vbb V bb Rbb


    Original     		PDF 409L1 410x2 412B2 432x2 442x2 426L1 726L1 734L1 611L1 612N1 diode zener ZL 7 BTS432F BTS542D BTS 640S2 S BTS432E 409L1 diode zener ZL 7.5 BTS542 BTS 542D BTS432D2

    2001 - Diode smd code f2

    Abstract: transistor sc 308 BTS410F2 E3062A INFINEON BTS410F2 Q67060-S6103-A3 410E2 410H E3062 Q67060-S6103-A2 BTS 410 F2
    Text: PROFET® BTS 410 F2 Smart Highside Power Switch Features Product Summary Overvoltage , Group 1 of 15 2003-Oct-01 BTS 410 F2 Pin Symbol Function 1 GND - Logic , connection. PCB is vertical without blown air. Semiconductor Group 2 2003-Oct-01 BTS 410 F2 , >5.5 V Semiconductor Group 3 2003-Oct-01 BTS 410 F2 Parameter and Conditions Symbol , 4 2003-Oct-01 BTS 410 F2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V


    Original     		PDF 2003-Oct-01 Diode smd code f2 transistor sc 308 BTS410F2 E3062A INFINEON BTS410F2 Q67060-S6103-A3 410E2 410H E3062 Q67060-S6103-A2 BTS 410 F2

    2001 - E2 SMD

    Abstract: BTS 410 E2 BTS 412-B2 bts412b2 bts 410G2 smd BTS 410 E2 E3043 410E2 E3062A BTS410E2 E3062
    Text: PROFET® BTS 410 E2 Smart Highside Power Switch Features Product Summary Overvoltage , . Semiconductor Group 1 of 16 2003-Oct-01 BTS 410 E2 Pin Symbol Function 1 GND - , -Oct-01 BTS 410 E2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 , -Oct-01 BTS 410 E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified , 2003-Oct-01 BTS 410 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) VIN


    Original     		PDF 2003-Oct-01 E2 SMD BTS 410 E2 BTS 412-B2 bts412b2 bts 410G2 smd BTS 410 E2 E3043 410E2 E3062A BTS410E2 E3062

    1997 - Diode smd code f2

    Abstract: BTS 410 F2 BTS 410 E2 E3043 410E2 410H BTS410F2 E3062 E3062A bts307 410F2
    Text: PROFET® BTS 410 F2 Smart Highside Power Switch Features Product Summary Overvoltage , . Semiconductor Group 1 03.97 BTS 410 F2 Pin Symbol Function 1 GND - Logic ground , vertical without blown air. Semiconductor Group 2 BTS 410 F2 Electrical Characteristics , ) RON 3 V V µA BTS 410 F2 Protection Functions Initial peak short circuit current limit , 4 BTS 410 F2 Truth Table Inputlevel Normal operation Open load Short circuit to GND


    Original     		PDF O-220AB/5, E3062 BTS410F2 E3062A O-220AB/5 Q67060-S6103-A2 BTS307/308 E3043 E3043 Diode smd code f2 BTS 410 F2 BTS 410 E2 E3043 410E2 410H bts307 410F2

    st 358 8-pin

    Abstract: No abstract text available
    Text: ground BTS 410D2 410E2 410G2 410H2 D E G H 307 308 X X X X X X X X Open load detection , Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback Output to the load BTS , unless otherwise specified BTS 307 Symbol m in | Values ty p | m ax Unit Load Sw itching , specified BTS 307 Symbol min | Values typ | max Unit Protection Functions Initial peak short circuit , eter and Conditions at 7 1 = 25 °C, 14* = 12 V unless otherwise specified BTS 307 Symbol min


    OCR Scan     		PDF BTS307 E3043 C67078-S5204-A3 st 358 8-pin

    1997 - bts 410G2 smd

    Abstract: 410E2 C67078-S5204-A4 E3043 E3062 E3062A BTS 307
    Text: PROFET® BTS 307 Smart Highside Power Switch Features Product Summary Overvoltage protection , load current limited by connected load. Semiconductor Group 1 08.96 BTS 307 Pin Symbol , 1 ms necessary, if the device is used with higher Vbb. Semiconductor Group 2 BTS 307 , , if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group m 10 2.2 50 - mA BTS 307 , limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 BTS 307 Parameter


    Original     		PDF O-220AB/5 systems13) O-220AB/5, E3043 E3043 C67078-S5204-A3 bts 410G2 smd 410E2 C67078-S5204-A4 E3062 E3062A BTS 307

    38729

    Abstract: cs 308
    Text: 10 ASSEM BLY M A T E R IA L NO. 387291403 3 387291644 tt OF CIRCUITS 33729 'XX ' 21.2 30.7 40.2 49.7 59.2 78.3 97.3 1063 116.4 125.9 135.5 1451 154.5 ).83) 1.2 1 ) 1.96) 2.33) 2.71) 3.08 ) 3.46) 4.21) 4.58) 4.96) 5.33) 5.71) 3.08 ) 19.1 28.6 47.6 57.2 6.7 76.2 85.7 95.3 04.8 14.3 23.8 33.4 42.9 (0.38) (0.75) (1.13) (1.50) (2.25) (2.63) (3.00) (3.38) (3.75) (4.13) (4.50) (4.Í (5.25) (5.63 , /06/30 D ATE 9.53MM/.375 SR BTS , CS ASSY WITH WIRE WRAP TAIL -75 OPT AND HINGED COVER ^ MOLEX


    OCR Scan     		PDF SD-38729-012 38729 cs 308

    2001 - transistor AG 307

    Abstract: 410E2 C67078-S5204-A4 E3043 E3062 E3062A
    Text: PROFET® BTS 307 Smart Highside Power Switch Product Summary Overvoltage protection , , reverse load current limited by connected load. Semiconductor Group 1 of 12 2003-Oct-01 BTS , 2 2003-Oct-01 BTS 307 Electrical Characteristics Parameter and Conditions Symbol at , Semiconductor Group 3 2003-Oct-01 BTS 307 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = , . Semiconductor Group 4 2003-Oct-01 BTS 307 Truth Table Input- Output level level Normal


    Original     		PDF O-220AB/5 2003-Oct-01 transistor AG 307 410E2 C67078-S5204-A4 E3043 E3062 E3062A

    410G2

    Abstract: 410G 410H2 BTS 307
    Text: «235b05 0012bi7 n i PROFET® BTS 307 SIEMENS Smart Highside Power Switch Features , 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S 0 Function Logic ground BTS 307 Input , specified BTS 307 Symbol Values min typ Unit max Protection Functions Initial peak short circuit , otherwise specified BTS 307 Symbol Values min typ max Unit Input and Status Feedback7) Input , O Q^ bM E 3ñb BTS 307 SIEMENS Truth Table Inputlevel Normal operation Open load Short circuit


    OCR Scan     		PDF 235b05 0012bi7 an20AB/5, E3043 C67078-S5204-A3 fl535bOS 410G2 410G 410H2 BTS 307

    1997 - BTS 410 E2 E3043

    Abstract: 410E2 410H BTS410E2 E3062 E3062A ST SMD SCR E2 SMD
    Text: PROFET® BTS 410 E2 Smart Highside Power Switch Features Product Summary Overvoltage , . Semiconductor Group 1 03.97 BTS 410 E2 Pin Symbol Function 1 GND - Logic ground , vertical without blown air. Semiconductor Group 2 BTS 410 E2 Electrical Characteristics , ) RON 3 V V µA BTS 410 E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V , . ratings page 2 and circuit page 7). 9) Semiconductor Group 4 BTS 410 E2 Parameter and


    Original     		PDF O-220AB/5, E3062 BTS410E2 E3062A O-220AB/5 Q67060-S6102-A2 E3043 E3043 Q67060-S6102-A3 BTS 410 E2 E3043 410E2 410H ST SMD SCR E2 SMD

    1997 - 412B2

    Abstract: BTS 410 E2 E3043 BTS 412-B2 410E2 410H E3062
    Text: PROFET® BTS 412B2 Smart Highside Power Switch Features Product Summary Overvoltage , . Semiconductor Group 1 03.97 BTS 412B2 Pin Symbol Function 1 GND - Logic ground 2 , vertical without blown air. Semiconductor Group 2 BTS 412B2 Electrical Characteristics , >5.5 V Semiconductor Group m mA BTS 412B2 Parameter and Conditions Symbol at Tj = , Semiconductor Group 4 BTS 412B2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless


    Original     		PDF 412B2 O-220AB/T O-220AB/5, E3062 412B2 E3062A O-220AB/5 BTS 410 E2 E3043 BTS 412-B2 410E2 410H

    1997 - smd diode l15

    Abstract: 410E2 410H BTS410H2 E3062 E3062A BTS 410 D2 E3043 application note BTS
    Text: PROFET® BTS 410 H2 Smart Highside Power Switch Features Product Summary Overvoltage , . Semiconductor Group 1 03.97 BTS 410 H2 Pin Symbol Function 1 GND - Logic ground , vertical without blown air. Semiconductor Group 2 BTS 410 H2 Electrical Characteristics , >5.5 V Semiconductor Group m mA BTS 410 H2 Parameter and Conditions Symbol at Tj = , Group 4 BTS 410 H2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless


    Original     		PDF O-220AB/5, E3062 BTS410H2 E3062A O-220AB/5 Q67060-S6105-A2 E3043 E3043 Q67060-S6105-A3 smd diode l15 410E2 410H BTS 410 D2 E3043 application note BTS

    1997 - 6 pin TRANSISTOR SMD CODE Z1

    Abstract: 410E2 410H BTS410G2 E3062 smd diode code L12
    Text: PROFET® BTS 410 G2 Smart Highside Power Switch Features Product Summary Overvoltage , 03.97 BTS 410 G2 Pin Symbol Function 1 GND - Logic ground 2 IN I , vertical without blown air. Semiconductor Group 2 BTS 410 G2 Electrical Characteristics , ) RON 3 V V µA BTS 410 G2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V , resistor. 9) Semiconductor Group 4 BTS 410 G2 Truth Table Inputlevel Normal operation Open


    Original     		PDF O-220AB/5 O-220AB/5, E3062 Q67060-S6104-A2 BTS410G2 E3062A E3043 E3043 Q67060-S6104-A3 6 pin TRANSISTOR SMD CODE Z1 410E2 410H smd diode code L12
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