FET E04 Search Results

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

Contextual Info: Doc No. TT4-EA-14580 Revision. 2 Product Standards MOS FET FC4B22070L FC4B22070L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 1.67 3 1 2 „ Features y Low source-source ON resistance:Rss on typ. = 17.5 m Ω（VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14847 Revision. 1 Product Standards MOS FET FC6B22220L FC6B22220L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 „ Features y Low source-source ON resistance:Rss on typ. = 8.2 m Ω（VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14734 Revision. 2 Product Standards MOS FET FC6B22100L FC6B22100L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.2 m （VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14513 Revision. 1 Product Standards MOS FET FC6B22090L FC6B22090L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 • Features  Low source-source ON resistance:Rss on typ. = 8.5 m （VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14952 Revision. 1 Product Standards MOS FET FC8V36060L FC8V36060L Single N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits For load switching 2.9 0.3 8 7 6 5 1 2 3 4 0.16 „ Features 2.4 2.8 y Low drain-source ON resistance:RDS on typ. = 70 mΩ（VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14176 Revision. 2 Product Standards MOS FET FC4B21080L FC4B21080L Gate resistor installed Dual N-channel MOS FET Unit: mm • Package dimension For lithium-ion secondary battery protection circuits 1.11 3 1 2 1.11 4  Features 0.1  Low source-source ON resistance:Rss on typ. = 27 m （VGS = 4.5 V)

Contextual Info: Supertex inc. VP2450 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a

marking oc diode sot89

Contextual Info: Supertex inc. VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

VN1509

Contextual Info: Supertex inc. VN0109 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

C031411

Contextual Info: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode

Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance and high gain Free from secondary breakdown Low CISS and fast switching speeds This low threshold, enhancement-mode (normally-off)

TN1L

Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces

sot 23 x 316

Abstract: fet sot-89 marking code sot-89 MARKING CODE ab TN5325 TN5325K1-G TN5325N3-G TN5325N8-G jedec sot-23
Contextual Info: TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

DN5MW

Abstract: DN3545 DN3545N3-G DN3545N8-G
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

D2625

Contextual Info: Supertex inc. DN2625 N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options Features General Description Very low gate threshold voltage Designed to be source-driven Low switching losses Low effective output capacitance Designed for inductive loads

Contextual Info: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability

125OC

Abstract: VF15 VN0104 VN0104N3-G VN1504NW
Contextual Info: Supertex inc. VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input

Contextual Info: Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability

2406L

Abstract: VN2406 A120109
Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a