BF245 A spice
Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
Contextual Info: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and
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100khzbf245 a spicebf245 spiceelectronic power generator using transistor+7bf245a spicebf245bf245 b spicebf245 transistortransistor bf245fet bf245bf245 spice model
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buz90af
Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391
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2sk1922sk2122sk241bf960+16bf961bf964bf966sbf981ot103bf996buz90afp7nb60fpp4nb80fpp6n60p5nb60fp2sk30abuz91a2sk2645buz1002sk163
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transistor BF245
Abstract: BF245 Fet BF245 transistor BF245 A UHF transistor FET
Contextual Info: IsK U N-CHANNEL JUNCTION FET DESCRIPTION BF245 Effect is N-Channel Transistor TO-92 Junction Field designed for VHF/UHF amplifiers and mixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V Drain Current
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bf245300mw200/xa300/xs+4transistor bf245fet bf245transistor bf245 auhf transistor fet
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BF245
Abstract: transistor BF245 Fet BF245 BF245 TRANSISTOR FET TO-92
Contextual Info: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO BF245 N-CHANNEL JUNCTION FET TO-92 Field for GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage Gate-Source Voltage
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bf245300mw300/xs200/xa+4transistor bf245fet bf245bf245 transistorfet to-92
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transistor BF245
Abstract: fet BF245 BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"
Contextual Info: BF245 N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for V HF/U H F amplifiers and m ixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V
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bf245300mw300/xstransistor bf245+5fet bf245transistor bf245 abf245 transistortransistor gdsigss 5 na
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F245B
Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten
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100-mhzf245bbf2562n3820+7bc264u1898ebfs21ampf105vergleichslistebf320tis69
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BC237
Abstract: 2N7000 Fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR
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2n7000226aaf218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc2372n7000 fet
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2N3819 junction fet
Abstract: 2N5486 characteristics BC237 bc107a pin out j305 replacement BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistors N–Channel — Enhancement MPF6659 MPF6660 MPF6661 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage
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mpf6659mpf6660mpf6661226ae+9msc1621t1msc2404msd1819a2n3819 junction fet2n5486 characteristicsbc237bc107a pin outj305 replacementbcy72
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2406L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc Drain – Gate Voltage VDGR 60
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vn2406l226aamsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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2N3819 fet
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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2n7002lt1236abmsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv16422n3819 fetbc237
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BC237
Abstract: BC857A MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,
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bss138lt1ot-23msc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv1642bc237bc857amarking code diode sod123 w1
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bs170 replacement
Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN 2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)
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bs170226aads218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640bs170 replacementbc237bc30transistor k 2056
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BC237
Abstract: Fet BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V
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vn0300l226aamsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237fet bf245
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BC237
Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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vn2222ll226aamsc1621t1msc2404+10msd1819amv1620mv1624mv1636mv1640mv1642bc237transistor 2n2222a to-92of transistor 2n2222 to-92transistor 2n3819
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BC237
Abstract: transistor TO-92 bc108 VN10lM equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN10LM N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 2 3 CASE 29–05, STYLE 22 TO–92 TO–226AE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous
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vn10lm226aevol218amsc1621t1+9msc2404msd1819amv1620mv1624mv1636mv1640bc237transistor to-92 bc108vn10lm equivalent
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code marking 6z sot-23
Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous
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mmbf170lt1236abc218amsc1621t1+13msc2404msd1819amv1620mv1624mv1636code marking 6z sot-23bc237h2a transistorbf2456z sot223 markingmmbv2104j112 fetbcy72
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BC237
Abstract: VN2410L equivalent sot323 w2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2410L 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 240 Vdc Drain – Gate Voltage VDGR 60 Vdc Gate – Source Voltage
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vn2410l226aat218amsc1621t1+9msc2404msd1819amv1620mv1624mv1636mv1640bc237vn2410l equivalentsot323 w2
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BC237
Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,
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bss138lt1ot-23msc1621t1msc2404+13msd1819amv1620mv1624mv1636mv1640mv1642bc2372n5551 sot232n2222 sot-23418 motorolaj112 fetfree transistor bc547 temperature2n3819 junction fet
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date code IEC 62
Abstract: bc107a pin out BC237 bf256c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage
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vn0610ll226aasecon218amsc1621t1+10msc2404msd1819amv1620mv1624mv1636mv1640date code iec 62bc107a pin outbc237bf256c
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FET BFW10
Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
Contextual Info: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823
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tp42242n4224smp5248tmpf5248+15tp5248bfw10smp3823tis34tmpf3823fet bfw10bc244fet nf510nf510 fet2sk520bfw10 fetfet bf244fet tis34nf510nec 200j
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BC237
Abstract: 2N3819 junction fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs
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bss123lt1236abcharacteris218amsc1621t1+7msc2404msd1819amv1620mv1624mv1636bc2372n3819 junction fet
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BC237
Abstract: MSA1022 msc2295 BF391 "direct replacement"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for
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m218amsc1621t1msc2404msd1819a+10mv1620mv1624mv1636mv1640mv1642mv1644bc237msa1022msc2295bf391 "direct replacement
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e304 fet
Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092
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bf256bbf256lb2sk121esm4092+14mfe2005mpf4416uc21492n4978pn4304e304 fet2sk581siliconix e304mpf4860tp5950interfetbf256spn4222u199
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TP4221
Abstract: BFW12 2SK34 KE4221 2N4221 motorola bf256 2N4220 2sK34 fet
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer 9,. V BR GSS loss (V) (A) Min (S) Max 2.5m 2.5m 2.5m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m 3.0m ;3.om 3.0m 3.0m 3.0m 3.0m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 4.5m 5.0m 5.0m 5.0m 5.0m 5.0m 5m 5.0m 5.0m 5.0m 5.0m 5.0m
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tp55562n5556mpf4220ke4220+12pn4220smp4220tmpf4220tp4220tp4221bfw122sk34ke42212n4221 motorolabf2562n42202sk34 fet
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