FET 900V Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3341-01 equivalent

Abstract: 2SK3341-01 2sk3341
Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

A2293

Contextual Info: 2SK1943-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage

A2292

Abstract: 2SK1942-01 SC-65
Contextual Info: 2SK1942-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES I Features Outline Drawings 'High speed switching >L>w on-resistance 'No secondary breakdown ' L w driving power 'High voltage ' V CS = ±30V Guarantee •Avalanche-proof I Applications

Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

Contextual Info: 2SK3341-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings

mosfet v0

Contextual Info: 2SK960-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES Outline Drawings • Hhjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi(|h voltage ■Applications • Switching regulators

Contextual Info: 2SK961 FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • l.ow driving power • High voltage ■ Applications • Switching regulators

ups electrical symbols

Abstract: 2SK727-01 2SK727 schematic symbols UPS SC-65
Contextual Info: 2SK727-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■Applications • Switching regulators

mosfet 2sk

Abstract: A2117 HXAA 2SK1024-01 A2-117 DIODE JS 8
Contextual Info: 2SK1024-01 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES Outline Drawings ¡Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage V gss- ± 30V Guarantee Avalanche-proof ¡Applications Switching regulators

l00a

Abstract: PV 900v 16J1 2SK961 gmg6 T0220AB T151 DIODE JS.3
Contextual Info: 2SK961 FUJI POWER M OS-FET N-'HANNEL SILICON POWER MOS-FET F-I ¡Features S E R IE S lOutline Drawings High speed switching Low on-resistance No secondary breakdown l.ow driving power High voltage ¡Applications Switching regulators UPS D C - D C converters

2SK2147-01

Contextual Info: 2SK2147-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-n SERIES I Outline Drawings • Features • High speed sw itching • Low o n-resistance • No secondary breakd ow n • Low driving p o w er

2SK960

Abstract: 50N60 2SK960-MR
Contextual Info: 2SK960-MR FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES Outline Drawings • Hiijh speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hi<|h voltage ■Applications • Switching regulators

2SK727-01

Abstract: SC-65
Contextual Info: 2SK727-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■A pplications • Switching regulators

2SK957-MR

Abstract: 2sk957
Contextual Info: 2SK957-MR FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-II SERIES Outline Drawings ¡Features High speed switching 1Low on-resistance 1No secondary breakdown Low driving power ' High voltage >Vgss= ± 3 0 V Guarantee •Applications S w itc h in g regulators

Contextual Info: 2SK1548-01M SIPMOS FU JI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-II SERIES • Features IOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 30V Guarantee

Contextual Info: 2SK727-01 FUJI POWER MOS-FET SERIES N-CHANNEL SILICON POWER MOS-FET p • Features ■ O u tlin e Drawings j • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving pow er • High voltage • Avalanche-proof ■A pplications

a2297

Contextual Info: 2SK1944-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET - F A P - I I A • Features S E R I E S Outline Drawings • High speed switching • l ow on-resistanoe • I Jo secondary breakdown • l ow driving power

TT 2158

Contextual Info: 2SK1212-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High current • Low orwesistance • No secondary breakdown • Low driving power • Avalanche-proof ■ Applications • DC-DC converters • Motor controllers • Gt neral purpose power amplifier

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

2SK1082

Abstract: 2SK1082-01 SC-65
Contextual Info: 2SK1082-01 SIPMOS FUJI POWER MOS-FET N-CHANIMEL SILICON POWER MOS-FET FAP-II SERIES lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GSs = ± 3 0 V Guarantee

A2293

Abstract: NF C 93-400 2SK1943-01
Contextual Info: 2SK1943-01 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hiyh voltage • V r>;- ±30V Guarantee • Avalanche-proof