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    FERRANTI TRANSISTOR Search Results

    FERRANTI TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    FERRANTI TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N2223

    Abstract: 2N2060 Ferranti Semiconductors BS9300 "dual TRANSISTORs" 2N2223A C479 ZDT40 ZDT41 ZDT42
    Contextual Info: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a custom -build engineering service to


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    2n2060bs93002n22232n2223a+8zdt40zdt41zdt42zdt44zdt45ferranti semiconductorsdual transistorsc479 PDF

    N222

    Abstract: 2N2060 2N2223 ZDT40 "dual TRANSISTORs" Ferranti Semiconductors ZDT41 ZDT42 ZDT44 ZDT45
    Contextual Info: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a c u sto m -b u ild e n gineering


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    Ferranti ZN435

    Abstract: 3sm7 Ferranti ZN435E ADC tracking tracking -ADC FERRANTI ELECTRIC LM311 ZN435J function generator using LM311
    Contextual Info: FERRANTI ELECTRIC INC TS 3547860 FERRANTI DeT|3S47fibO DDOSTO? fl f ELECTRIC INC 95D 05907 D 7 '5 7 '/< ^ ' fo 8-bit multifunction data converter ZN435E ZN435J FEATURES • Multimode device operates as: -D A C -A D C -Tracking A D C - Voltage to frequency converter


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    8078 microprocessor pin diagram

    Abstract: 3s4 ZENER DIODE ferranti 3sm7 sk 8060 8K21 ZN439E-7 3S47 47MF ZIM439
    Contextual Info: FERRANTI ELECTRIC IN C TS D E § 3 S 47ñbO 3547860 FERRANTI E L E C T R I C INC □OObDD? 95D 06007 8-bit jitP compatible A-D converter D ZN 439 Series ADVANCE PRODUCT INFORMATION FEATURES DESCRIPTION • The ZN439 is an 8-bit successive approximation A-D converter designed to be easily interfaced


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    ferranti

    Abstract: MPSA42 MPSA43 Ferranti Semiconductors
    Contextual Info: MPSA42 MPSA43 FERRANTI semiconductors NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


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    mpsa42mpsa43o-5/39100/ia+320mhzferrantiferranti semiconductors PDF

    Ferranti Semiconductors

    Abstract: MPSA42 MPSA43 ferranti se17
    Contextual Info: MPSA42 MPSA43 FERRANTI semiconductors NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


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    FMMT-A42R

    Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
    Contextual Info: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


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    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


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    ZTX454

    Abstract: ZTX455 ferranti Scans-00107852 Ferranti Semiconductors
    Contextual Info: FERRANTI i semiœnductors ZTX454 ZTX455 NPN Silicon Planar M edium Power Transistors DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Application areas include: Audio Frequency Amplifiers, Drivers


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    BCW70R

    Abstract: general purpose complementary transistors 1a 50v BCW71 scw71 BCW69 BCW69R BCW70 BCW72 BFQ31 5P sot23
    Contextual Info: FERRANTI semiconductors * BCW69 BCW70 PNP Silicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r lo w level, general purpose applications. Com plementary to th e BCW71 and BCW72. Encapsulated in th e popular SOT-23 package these devices


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    bcw69bcw70bcw71bcw72+8ot-23fmmt5087bcw70rgeneral purpose complementary transistors 1a 50vscw71bcw69rbfq315p sot23 PDF

    transistor JSW

    Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26
    Contextual Info: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power


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    bf493

    Abstract: BF492 BF491 ferranti
    Contextual Info: BF491 BF492 BF493 FERRANTI semkxmdüctots PNP Silicon Planar High V oltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-llne package is formed by injection moulding a SILICONE


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    BF393

    Abstract: ferranti BF391 BF392
    Contextual Info: BF391 BF392 BF393 Inr IIsemiconductors FERRANTI L NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-line package is formed by injection moulding a SILICONE


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    bf391bf392bf393o-5/39+1ferranti PDF

    BF493

    Abstract: Ferranti Semiconductors BF492 BF491 ferranti
    Contextual Info: BF491 BF492 BF493 FERRANTI semkxmdüctots PNP Silicon Planar High V oltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-llne package is formed by injection moulding a SILICONE


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    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


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    BCW66

    Abstract: transistor EH sot-23 BCW65 BCW65A BCW65B BCW66F BCW67 BCW68 ferranti BCW66H
    Contextual Info: * FERRANTI semiconductors BCW65 BCW66 NPN Sil icon Planar Medium Power Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW67 and BCW68. Encapsulated in the popular SOT-23 package these devices


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    2222a sot23

    Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
    Contextual Info: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.


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    BCW71K1

    Abstract: BCW72R-K5 BCW71 BFQ31 BCW71R BCV72 Ferranti Semiconductors BCW69 BCW72 BCW72R
    Contextual Info: I FERRANTI BCW71 BCW72 T IIsemiconductors L NPN S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r low level, general purpose applications. Com plem entary to the BCW 69 and BCW7Q. Encapsulated in the popular SOT-23 package these devices


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    BCW60

    Abstract: transistor ad 1v hFE Group ferranti BCW60A BCW60B BCW60C BCW60D FERRANTI ZS Scans-0010382
    Contextual Info: FERRANTI k semiconductors BCW60 N P N Silicon Planar Small Signal Transistor DESCRIPTION These devices are intended fo r use in low level a m plifica ­ tion, low level sw itching and low noise applications. Encapsulated in the popular SOT-23 package these devices


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    ferranti

    Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
    Contextual Info: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching


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    PSA92

    Abstract: SE21 mpsa92 MPSA93 SE19 SE20 ferranti
    Contextual Info: 4 FERRANTI semiconductors MPSA92 MPSA 93 PNP S ilicon Planar H igh Voltage Transistors G EN ER A L D ESCRIPTIO N These plastic encapsulated, general purpose tran sis­ tors are designed for applications requiring high break­ down voltages, low saturation voltages and low


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    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Contextual Info: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


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    5D marking DIODE BAS16

    Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
    Contextual Info: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


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    marking of m7 diodes

    Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
    Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.


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