FERRANTI ELECTRONICS Search Results

VENUS c15

Abstract: ferranti FERRANTI ELECTRONICS Ferranti Venus C-15 C-30
Contextual Info: S7E D FERRANTI VENUS 35407^1 0GGQ37'i G VSI «C1" SERIES LOW COST PHOTOM ULTIPLIER POWER SUPPLY Ferranti No Minimum Load Required! Output Range Variable DC to High Voltage DC Converter Mounts on Printed Circuit Board C -15 500 to 1500VDC C -30 1000 to 3000VDC

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

Phototransistor TIL81

Abstract: TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash C ontrol, etc. ZM100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29

FERRANTI ELECTRONICS

Abstract: 2048khz
Contextual Info: TELECOMMUNICATIONS CIRCUITS ADVANCE INFORMATION SIN GLE CHIP SYNCHRONOUS CO DEC ZNPCM3 The ZNPCM 3 monolithic codec I.C. is the result of a joint development programme between British Telecom and Ferranti Electronics Limited. Developed for use in single channel codec systems, the device

TIL81

Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29

Contextual Info: FERRANTI semiconductors M icrophone A m p lifie r For Telephone Circuits FEATURES • • • • • • • • • • • Conforms to BT Specification S 1 3 7 7 On Chip Bridge Allows Dual Supply Polarity Operation Direct Matching to ElectretTransducers

FERRANTI f100

Abstract: F111-L ZN1001 F100-L Microprocessor Ferranti FERRANTI MEMORY F115-L F101 FERRANTI ELECTRONICS F112-l
Contextual Info: F100-L 16-BIT MICROPROCESSOR SYSTEM F100-L 16-BIT MICROPROCESSOR The Ferranti Com puter Systems F100-L is the first M icroprocessor to be w h o lly designed and m anufactured in Europe, and has been designed as one part o f an overall system concept. The F100-L

Phototransistor TIL81

Abstract: TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent
Contextual Info: COMPETITOR CROSS REFERENCE LIST The following cross-reference list has been compiled as a guide for design engineers and purchasing agents and indicates the nearest Ferranti equivalent to a variety of competitive manufacturer's devices. In some cases there will be minor differences in electrical characteristics and/or package details and

ferranti

Abstract: Ferranti bus ZN501AJ ZN502CJ ZN502E Ferranti Semiconductors Ferranti ZN
Contextual Info: A-D CONVERTER FERRANTI semiconductors L ZN 501A J Z N 50 2E /C J 10-B it ¿iP-Compatible A to D Converters FEATURES • Choice o f lin e a rity: '/2LSB-ZN501, 1LSB-ZN 502 • 3-state o u tp u ts , TTL com patible • 15/j S ty p ic a l, 2 0 guaranteed conversion tim e

2N2475

Abstract: STS918 transistor 2n2369 noise ft-250MHz STS80 Ferranti iNTEGRATED circuits ferranti micro-e 2N918 ZT Ferranti STS180
Contextual Info: Semiconductors for Hybrid Micro-Electronics Ferranti have a w id e range of s ilic o n se m ico n d u cto rs, w h o lly U .K. m ade, a v a ilab le in s lic e an d d ic e form , or en ca p su late d in m icrom in ia tu re p a ck a g e s or in m u ltip le assem blies, fo r use w ith t h ic k an d thin film circuits.

IR TIL81

Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and

RF Transistors

Abstract: 2N2708 2N3866 BF197 BF197P FERRANTI ELECTRONICS Transistor 2N3866 2N2102 2N4036 2N4427
Contextual Info: HIGH FREQUENCY T A B L E 7 - N P N S IL IC O N P L A N A R H IG H F R E Q U E N C Y T R A N S I S T O R S The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details

interfacing of RAM and ROM with 8086

Abstract: interfacing of 4k RAM with 8086 practical applications of 8086 microprocessor interfacing of RAM with 8086 ferranti interfacing of RAM and ROM with 8088 FERRANTI MEMORY DB22A FERRANTI ELECTRONICS me 4946
Contextual Info: Microprocessor-compatible 8-bit, 8 channel data acquisition system ZN 437E Z N 43 7J ADVANCE PRODUCT INFORMATION FEATURES DESCRIPTION • Choice of linearity: ± 0 .5 , ±1LS B • 20/xS conversion time • 8 analogue inputs • On-chip 8 x 8 RAM The Z N 4 3 7 is an 8-blt. 8 channel data

transistor G28

Abstract: Transistor g29 ZM100 FERRANTI ELECTRONICS SD16 ZM110 ZM210 2856K
Contextual Info: ELECTRICAL CHARACTERISTICS c PHOTO TRANSISTOR ELECTRICAL CHARACTERISTICS Illum ination Dark Leakage Dice Type ZM100 ZM110 ZM210 V ceo V cB O Min. Current M ax. V V ma 35 35 35 35 35 35 1.0 0.025 0.10 Min. < M in. Sensitivity (Note 1) @ V c e @ lc V Max.

RF Transistors

Abstract: BF197P ferranti micro-e ZTX327
Contextual Info: PLESSEY TS SEMICOND/MSCRETE 7220533 PLESSEY 5T|7aaDS33 SEMICOND/ D IS C R E T E 000Mtì 7 cì M 95D 04979 RF TRANSISTORS SMALL SIGNAL | • Many types are offered in a range of packages to enable the designer to select cost effective devices compatible with the equipment and market.

FERRANTI ELECTRONICS

Abstract: ferranti electron gun CRT Ferranti Semiconductors 4946 ZN454CJ ZN464CJ 74605 Ferranti iNTEGRATED circuits
Contextual Info: ì T C r i p le o n v e 4 - B r t e it V id e o D - A ZN 454C J r ADVANCE PRODUCT INFORMATION FEATURES DESCRIPTION • 3 Video D AC's - Ideal for Colour Graphics • Fast, 8ns Settling Time • Update Rates to 10OMHz The Z N 45 4 C J consists of three 4-bit D-A

BF197P

Abstract: BF493 ztx342 cd BF196P ZTX327 FERRANTI ELECTRONICS BF393 MPSA42 MPSA92 ZTX320
Contextual Info: TABLE 10 : NPNiPNP HIGH FREQUENCY The devices shown in this table are designed for high frequency operation is such application areas as amplification, switching and oscillation. The transistors marked with f are particularly suitable for use in RF and Video IF stages of television re­

ztx327

Abstract: BF197P FERRANTI ELECTRONICS H9 sot 23 BSS63 BSS64 FMMT918 FMMTA12 FMMTA13 FMMTA14
Contextual Info: SOT-23 TRANSISTORS D A R L IN G T O N -N P N R A T IN G S A N D C H A R A C T E R IS T IC S at 25°C ambient temperature. Type hFE at Iq /V ce mA/Volts t Ic b o nA V cb V olts ic mA P to t * mW min 30 300 300 10K 10/5 100 30 30 300 300 5K 10/5 100 30 20 300

plessey ttl

Abstract: geometry FERRANTI ELECTRONICS I/SMD transistor g29
Contextual Info: PLESSEY SEMICOND/DISCRETE TS 7220533 PLESSEY SEMICOND/DISCRETE D eT| 72 E0 S3 3 D00S002 4 ^ 95D 05002 T -V f- o l ELECTRICAL CHARACTERISTICS (c PHOTO TRANSISTOR ELECTRICAL CHARACTERISTICS Dice Type ZM100 ZM110 ZM210 V CE0 Min. V 35 35 35 V cbo Min. V 35 35

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

milstar

Abstract: Sage Laboratories Phase Shifters Raytheon Company GPS TPS-159 Harris microwave antenna MSR-21 rockwell gps Rotary Joints agena EF-111A
Contextual Info: Sage Laboratories.the “Reliability First” company Since 1955, we have devoted our resources to providing cus­ tomers with a broad spectrum of quality RF and microwave components from DC to 60 GHz. Recognized throughout the industry for quality and reliability, state of the art engineering,

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: XTR110 SBOS141C – JANUARY 1984 – REVISED SEPTEMBER 2009 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS ● 4mA TO 20mA TRANSMITTER ● SELECTABLE INPUT/OUTPUT RANGES: 0V to +5V, 0V to +10V Inputs 0mA to 20mA, 5mA to 25mA Outputs

ir513

Abstract: IR9513 lm324 4mA to 20mA transmitter XTR110 XTR110AG XTR110BG XTR110KP XTR110KU ZVP1304A SBOS141C
Contextual Info: XTR110 SBOS141C – JANUARY 1984 – REVISED SEPTEMBER 2009 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS ● 4mA TO 20mA TRANSMITTER ● SELECTABLE INPUT/OUTPUT RANGES: 0V to +5V, 0V to +10V Inputs 0mA to 20mA, 5mA to 25mA Outputs