BPW41D Search Results

IR remote control

Abstract: BPW41D bpw41 ir diode remote control for remote control for garage OE29 ir remote 1040nm
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The BPW 41D is a large area, silicon p .i.n . p h o to d io d e having a lo w ju n ctio n capacitance and co n se qu e n tly capable o f fa s t response tim es. The active chip is packaged in a plastic m oulding w h ich contains a near infra-red tran sm issive filte r such th a t th e device is sensitive to infra-red

IR TIL81

Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and

ic iR light control

Abstract: BPW41D ic for remote control for garage
Contextual Info: TS PLES'SEY SEMICOND/DISCRETE DE | 7 5 E D S 3 3 DODSQl? fc, 7220533 PLESSEY SEMICOND/DISCRETE 95D 05017 T~ HI" «S' BPW41D IN F R A -R ED PHO TO DETECTO R The BPW 41D is a large area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which

BPW41D

Abstract: oe30
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR Th e B P W 4 1 D is a large area, silicon p .i.n . photodio de having a lo w junction ca pacitan ce and consequ ently capable o f fa s t response tim es . T h e ac tive chip is packaged in a plastic m oulding w h ich contains a near infra-red transm issive filter such th a t th e device is sensitive to infra-red

ZNP100

Abstract: ms6b photocells
Contextual Info: ZETEX S E M I C O N D U C T O R S IbE » M S SERIES - • TT7GS7Ô DDDbfibfl 3 M Z E T 3 . SILICON MESA PHOTOCELLS Unencapsulated cells are coated with a special varnish to protect against contamination and moisture ingress. Encapsulated Cells are set into tough bakelite or epoxy

TIL81

Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29

ZTX384

Abstract: BPW41D ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier
Contextual Info: Application Note 3 Issue 2 November 1995 Infra-Red Remote Control and Data Transmission An Introduction to Photodiodes - Load Circuits and Applications David Bradbury Introduction The use of short range remote control and data transmission systems in both

Phototransistor TIL81

Abstract: TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash C ontrol, etc. ZM100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29

Contextual Info: SbE D • ^70570 D DD 7D 3ti Eb2 « Z E T B BPW SERIES ZETEX SEMICONDUCTORS SILIC O N PIN PHOTO D IO D ES " F 4 l~ A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection

Phototransistor TIL81

Abstract: TIL81 Phototransistor TIL100 Phototransistor bpx25 Phototransistor zm110 Phototransistor TIL100 FERRANTI ELECTRONICS Infra-red bpx25 mrd300 equivalent
Contextual Info: COMPETITOR CROSS REFERENCE LIST The following cross-reference list has been compiled as a guide for design engineers and purchasing agents and indicates the nearest Ferranti equivalent to a variety of competitive manufacturer's devices. In some cases there will be minor differences in electrical characteristics and/or package details and

Infra-red bpx25

Abstract: ZNP102 BPW41D znp100
Contextual Info: SbE » • ^ 7 0 5 7 3 □□□703t. SS3 ■ Z E T B MS-15 INFRA-RED PHOTOCELL 4\ This silicon photocell has been specifically developed for the detection of Infra-red radiation in the wavelength range of 750 to 1100nm. Originally used in conjunction with a Helium Neon laser for

znp100

Abstract: ZNP102
Contextual Info: 5bE ]> • ^70570 M S SERIES D G D 7 D 3 4 7flD « Z E T B ZETE X s e m i c o n d u c t o r s SILICON M E S A PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to large active area for general purpose use.

Photo Detectors

Abstract: diode 725 BPW50
Contextual Info: BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, w ith high rejection of wavelengths less than 7 0 0 nm. The devices have low junction capacitance and thus are capable

BPW50

Abstract: BPW50C fast photo diode diode 725 bpw 50 Photo Detectors BPW41D pin photo diodes bpw41 BPW41C
Contextual Info: BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection of wavelengths less than 700nm . The devices have low junction capacitance and thus are capable

BPX25

Abstract: BPX29 ZNP100 NP-102 BPW41D ZMP31 ZM100
Contextual Info: PACKAGE OUTLINES ! cV» <£» - f ìf -JILT “T - » _ L A on BPX25, ZM 100/110 TO-18 Lens Glass Fig. 1 BPX29 (TO-18 G la s s W in d o w ) ZNP100 (TO-5 Glass Window) Z N P 102/3 (TO-72 Glass Window) Fig. 3 Fig. 4 Fig.2 T It UT 1-V ^ t •Jl ZMP31 T 1 3mm Clear Plastic

photodiode BPW50

Abstract: BPW50 bpw41 Photo Detectors ZM100 diode 725 bpw filter BPW41D BPW41C BPW50C
Contextual Info: BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection of wavelengths less than 700nm. The devices have low junction capacitance and thus are capable