FD 9024 Search Results

Contextual Info: International US Rectifier Provisional Data Sheet No. FD 9.1273A IRHY7230CM IRHY8230CM HEXFET TRANSISTOR N-CHANNEL JAN5R2N7381 JANSH2N7381 R E F : M IL - S - 1 9 5 0 0 / 6 1 4 M EGA RAD HARD 200Volt, 0.4QQ, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs

pulse generator impedance "50 ohm"

Abstract: FDB300 Fast Recovery Bridge
Contextual Info: DIOTEC DIG E L E C T R O N I C S CO RP SÛE D I DIOTEC ELECTRO N ICS CO RP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 EÖMT1 0 7 0000123 70b ID IX Data Sheet No.: FRDB-300-A T-2_3>-05 3 AMP FAST RECOVERY BRIDGE RECTIFIERS

FDB600

Abstract: Fast Recovery Bridge
Contextual Info: DI O T E C E L E C T R O N I C S CORP SÖE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, C A 90248 Tel.: 310 767-1052 Fax: (310)767-7958 2 flim D 7 00001E5 SÛT « D I X Data Sheet No.: FRDB-600-A Z V Ö 7 6 AM P FA S T R E C O V E R Y BRIDGE RECTIFIERS

PTC04

Abstract: PCF8582A PTC04-DB-HALL01 ULN280 PCF8582AP 108-1-c-5 ULN2803LW DB-15-F ULN2803L 1092A
Contextual Info: PTC04-DB-HALL01 Daughter Board for Melexis PTC devices Features and Benefits PTC04 interface board for testing devices 90215 90224 90244 90251 90277 90280 Applications Experimental tool for Lab and Prototyping Production Equipment for Serial Programming Ordering Information

1121a5

Abstract: PTC04-DB-Hall PCF8582AP ULN2803LW PTC04 ULN2803L 100NF 1N4148 uln280 1n4148 die map
Contextual Info: PTC04-DBHall Daughter Board for Melexis PTC devices Features and Benefits PTC04 interface board for testing devices 90215 90224 90244 90251 90277 Applications Experimental tool for Lab and Prototyping Production Equipment for Serial Programming Ordering Information

91020-01HXA

Abstract: 91020-01HZA diagram class h amps AFC461 91020-01
Contextual Info: PD - 94585A AFC461 SERIES ADVANCED ANALOG EMI FILTER Description The AFC461 EMI filter will reduce the input line reflected ripple current of the AHV, ATO, ATW, ATR, and AHF line of DC/DC converters to levels below the CEO3 limits of MIL-STD-461. These EMI filters are manufactured in a facility certified

FGT 313

Abstract: N06010 a3058c 271121 intel i860
Contextual Info: [ p fô iy iiM A O W in te L MILITARY i860 XR 32/64-BIT MICROPROCESSOR Parallel Architecture that Supports Up to Three Operations per Clock — One Integer or Control Instruction per Clock — Up to Tw o Floating-Point Results per Clock High Perform ance Design

4ASS452

Abstract: DIODE 0A91
Contextual Info: International PD'9-1254 SlgRectifier_ IRL630S HEXFET Power MOSFET • • • • • • • S urface M ount A vailable in Tape & Reel D ynam ic dv/d t R ating R epetitive A valanche Rated Logic-Level G ate D rive r d s ON S pecified at VGS = 4V & 5V

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

a new zvs pwm full bridge converter with reduced

Abstract: AN-7536 AN2626 STW20NM60 STW20NM60FD report P channel MOSFET list of P channel power mosfet Welding topologies
Contextual Info: AN2626 Application note MOSFET body diode recovery mechanism in a phase-shifted ZVS full bridge DC/DC converter Introduction The ZVS exploits the parasitic circuit elements to guarantee zero voltage across the switching device before turn on, eliminating hence any power losses due to the

00A75

Abstract: INTEL Core i7 860 J 80222 lm 6358 J1 3009-2 271121 Texture mapping CC1105 Intel i860
Contextual Info: P K H IL D fiflD M M V MILITARY i860 XR 32/64-BIT MICROPROCESSOR • Parallel Architecture that Supports Up to Three Operations per Clock — One Integer or Control Instruction per Clock — Up to Two Floating-Point Results per Clock ■ High Performance Design

Contextual Info: PD 9.1467D International IO R Rectifier IRG4PC40UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: I . . I P D -5.039 International XQR Rectifier IGBT SIP MODULE Features • • • • C P V 363 M4 U preliminart UltraFast IGBT 1 I Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes

CS460

Abstract: cmos cross manual xy r01a r01f C2xx NEC 2415 W03A PC-9800 6200A 4 digits 7-segment led display
Contextual Info: MF599-06 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C62 Family Development Tool Reference Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

Contextual Info: Bulletin I0513J 02/03 FD059U06A5. Fred Die in Wafer Form a 0.35 ± 0.01 14 ± 0.4 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.499 ± 0.01 (59.01 ± 0.4)

FD075H06A5

Abstract: S1025
Contextual Info: Bulletin PD-20992 02/02 FD075H06A5 Fred Die in Wafer Form a 0.35 ± 0.01 c 14 ± 0.4 NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.905 + 0, -0.01 (75 + 0, -04)

Contextual Info: Bulletin I0519J 04/03 FD087H02A5. Fred Die in Wafer Form a 0.35 ± 0.01 14 ± 0.4 c NOTES: d b C A 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): 40 (1.57) Wafer flat alligned with side b of the die 3. DIMENSIONS AND TOLERANCES:

Contextual Info: Bulletin I0518J 04/03 FD122H02A5. Fred Die in Wafer Form a 0.35 ± 0.01 c 14 ± 0.4 NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): d b C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 3.099 + 0, - 0.01 (122 + 0, - 0.4)

Contextual Info: Bulletin I0515J rev. A 01/03 FD120L03A5. Fred Die in Wafer Form a 0.35 ± 0.01 c 14 ± 0.4 NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 3.048 ± 0.01 (120 ± 0.4)

FD060U02A5B

Abstract: MURD620CT S1025
Contextual Info: Bulletin PD-20649 03/02 FD060U02A5B Fred Die in Wafer Form a 0.35 ± 0.01 14 ± 0.4 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). b d 2. CONTROLLING DIMENSION (MILS): C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.524 + 0, -0.01 (60 + 0, -0.4)

Contextual Info: Bulletin I0516J 04/03 FD160H02A5. Fred Die in Wafer Form a 0.35 ± 0.01 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS INCHES . 2. CONTROLLING DIMENSION (INCH): d C b NOTES: (14 ± 0.4) c A 40 (1.57) Wafer flat alligned with side b of the die 3. DIMENSIONS AND TOLERANCES:

Contextual Info: Bulletin I0514J rev. A 01/03 FD075H06A5. Fred Die in Wafer Form a 0.35 ± 0.01 c 14 ± 0.4 NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 1.905 ± 0.01 (75 ± 0.4)

MQ 6 SENSOR pin diagram details

Abstract: MQ 5 SENSOR pin diagram smd marking dt2 rtc7301
Contextual Info: MQ332-01 Application Manual Real Time Clock Module RTC-7301 SF/DG In pursuit of "Saving" Technology ,Epson electronic device. Our Lineup of semiconductors, Liquid crystal displays and quartz devices assists in creating the products of our customers' dreams.

ETM15E-01

Abstract: MARKING Dt3 diode Q42730181000200 RTC-7301
Contextual Info: RM9902-E02 Application Manual Real Time Clock Module RTC-7301SF/DG Model Product Number RTC-7301SF Q42730181000200 RTC-7301DG Q42730111000200 NOTICE • The material is subject to change without notice. • Any part of this material may not be reproduced or duplicated in any form or any means without the