FBGA 11X13 Search Results

FBGA 11x13

Abstract: k8p2716 K8P2716UZC
Contextual Info: Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP 20x14mm , 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

EM6A9325

Contextual Info: EtronTech EM6A9325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.4 June/2003) Features • 4096 refresh cycles/64ms • Single 2.5V power supply • Interface: LVCMOS •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz

PC133 registered reference design

Abstract: 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2
Contextual Info: PRELIMINARY 512MB / 1GB x72, ECC 168-PIN REGISTERED FBGA SDRAM DIMM SYNCHRONOUS DRAM MODULE MT36LSDF6472G - 512MB MT36LSDF12872G - 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT (Front View)

EM669325

Contextual Info: EtronTech EM669325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.6 Sep./2003) Features • 4096 refresh cycles/64ms • Single 3.0V, or 3.3V power supply • Interface: LVTTL •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz

NP351-064-148

Abstract: NP351-18464 NP351 NP351-080-128 20890 14422 NP351-180-139 NP35 400X400 NP351-11230
Contextual Info: NP351 Series Open Top Fine Ball Grid Array (FBGA, 0.80mm Pitch) Specifications Part Number (Details) 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:

Contextual Info: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added 0.7 Changed FBGA Package Size from 11x13 to 8x13.

3MA18

Contextual Info: ADVANCE‡ 64Mb: x32 BAT-RAM SDRAM SYNCHRONOUS DRAM MT48LC2M32LFFC , MT48V2M32LFFC 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES BALL ASSIGNMENT Top View 90-Ball FBGA • Temperature Compensated Self Refresh (TCSR)

Contextual Info: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf

Contextual Info: ADVANCE‡ 64Mb: x32 BAT-RAM LOW POWER SDRAM SYNCHRONOUS DRAM MT48LC2M32LFFC , MT48V2M32LFFC 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES BALL ASSIGNMENT Top View 90-Ball FBGA • Temperature Compensated Self Refresh (TCSR)

transistor smd G46

Abstract: fluke 52 k/j Thermocouple 7512 pin diodes in micro semi data sheet smd transistor marking ey SMD MARKING CODE h5 MCP Technology Trend BGA-64 pad AMD reflow soldering profile BGA SMD MARKING CODE l6 BGA Solder Ball 0.6mm
Contextual Info: FBGA User’s Guide Version 4.2 -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

S29WS256P

Abstract: S29WS-P S73WS-P
Contextual Info: S73WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Mobile SDRAM on Shared Bus S73WS-P based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion

S71WS512PD0

Abstract: S29WS512P S29WS-P S71WS512PC0 S71WS512PC0HF3 S71WS512PD0HF3 S71WS-P
Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

S71WS128PB0

Abstract: S71WS256PC0HH3YR0 S71WS512PD0HF3 H-EE 32 S71WS512PD0HH3 S71WS256 TRAY FBGA 11X13
Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

66 ball nor flash

Abstract: S71WS-P BGA Package 14x14 S71WS128PC0 S71WS512PD0 spansion top marking S29WS128P S29WS256P S29WS512P S29WS-P
Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

S71WS256PC0HH3

Abstract: S71WS512PD0HH3 SWM032D spansion date code marking TRAY FBGA 11X13 S71WS256PD0HH3 S71WS256PC0HH3YR SWM064D133S1R S71WS256PC0HF3
Contextual Info: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

S72WS512PFFJF9GH

Abstract: BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information

BGA 130 MCP NAND DDR

Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information

TRAY FBGA 11X13

Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
Contextual Info: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion