NP35 Search Results

Contextual Info: Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 17.5 A)

socket 1155

Abstract: 1155 socket NP352-676-103 NP352-76814 45x45 mm bga X2933 35x35 bga 45x45 bga NP352-103 ac294
Contextual Info: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) Specifications NP352 - 560 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:

NP3502

Abstract: NP3502(R) thru NP3506(R)
Contextual Info: NP3502 R thru NP3506(R) Naina Semiconductor Ltd. Press Fit Diode, 35A Features • • • • Low Leakage Low Forward Voltage Drop Low Cost High Surge Current Capability Mechanical Characteristics • • • • • Chip: Gpp Chip Encapsulation: Epoxy Sealed

NP3520

Abstract: NP3520(R) thru NP3534(R)
Contextual Info: NP3520 R thru NP3534(R) Naina Semiconductor Ltd. TVS Auto Rectifier, 35A Features • • • • Low Leakage Low Forward Voltage Drop Low Cost High Surge Current Capability Mechanical Characteristics • • • • Encap: Epoxy Sealed Lead: Plated Lead, Solderable

Contextual Info: Preliminary Data Sheet NP35N04YLG R07DS0182EJ0100 Rev.1.00 Oct 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A)

NP351

Abstract: NP351-16914 NP351-28508 FBGA 1760 65113 NP351 yamaichi
Contextual Info: NP351 Series Open Top Fine Ball Grid Array (FBGA) Part Number (Details) NP351 - 120 14 - * - * Specifications Insulation Resistance: Dielectric Withstanding Voltage: Contact Resistance: Operating Temperature Range: Contact Force: 1,000MΩ min. at 100V DC

48031

Contextual Info: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) NP352 - 456 66 - * - * Specifications 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m Ω max. at 10mA/20mV max.

specifications of ic 740

Abstract: IC 740
Contextual Info: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) NP352 - 1521 24 - * - * Specifications 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m Ω max. at 10mA/20mV max.

X3329

Abstract: NP352 NP352-40025
Contextual Info: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) NP352 - 345 34 - * - * Specifications 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m Ω max. at 10mA/20mV max.

NP351

Abstract: NP351-064-148 NP351-180-139 212207 NP351-21653 NP351-064-227 X3640 np351-532 AC-28179 ac14425
Contextual Info: Series NP351 BGA / CSP 0.80mm Pitch TH - Open Top Specifications Part Number (Details) Insulation Resistance: Dielectric Withstanding Voltage: Contact Resistance: Operating Temperature Range: Contact Force: Mating Cycles: 1,000MΩ min. at 100V DC 100V AC for 1 minute

NP352-115523

Contextual Info: NP352 Series Open Top Fine Ball Grid Array (FBGA, 1.00mm Pitch) Part Number (Details) NP352 - 1064 26 - * - * Specifications 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute Contact Resistance: 100m Ω max. at 10mA/20mV max.

NP351-064-148

Abstract: NP351-18464 NP351 NP351-080-128 20890 14422 NP351-180-139 NP35 400X400 NP351-11230
Contextual Info: NP351 Series Open Top Fine Ball Grid Array (FBGA, 0.80mm Pitch) Specifications Part Number (Details) 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:

NP35N04YUG

Contextual Info: Preliminary Data Sheet NP35N04YUG R07DS0016EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 10 mΩ MAX. (VGS = 10 V, ID = 17.5 A)

Contextual Info: Preliminary Data Sheet NP35N055YUK R07DS1002EJ0100 Rev.1.00 Feb 08, 2013 55 V – 35 A – N-channel Power MOS FET Application: Automotive Description The NP35N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.

NP35N04YLG

Contextual Info: Preliminary Data Sheet NP35N04YLG R07DS0182EJ0100 Rev.1.00 Oct 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A)

NP351

Abstract: NP351 yamaichi NP3510 yamaichi IC Test Socket
Contextual Info: µBGAª Open top NP351 Series Arrays Characteristics 1,000M½or more at 100 VDC 700 VAC for 1 Minute 100m½ or less at 10mA/20mV (Initial) -55ûC ~ +170ûC Material PEI (Glass Filled) Beryllium Copper Gold over Nickel Insulator: Contact: Plating: NP351- 196 02- *

MCM65256-35

Abstract: LGA Application Notes motorola MCM65256
Contextual Info: fà MOTOROLA SEM ICO NDUCTO RS MCM65256 3501 ED B LU ESTEIN BLVD., A U S TIN , TEXAS 78721 Product P re v ie w HCMOS 2 5 6 K B IT R E A D O N L Y M E M O R Y (C O M P L E M E N T A R Y M O S T h e M C M 6 5 2 5 6 is a c o m p te rp e n ta ry M O S m a s k -p ro g ra m m a b le byte o rg a n ize d Read O n ly M e m o ry (R O M ). T he M C M p 5 2 5 6 is o rg a n ize d as

NP0640SAT3G

Abstract: 403C NP0640SBT3G NP0640SCT3G NP0720SAT3G NP0720SBT3G NP0720SCT3G NP0900SAT3G NP0900SBT3G NP1500SC-T3G
Contextual Info: NP Series Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional NP Series Thyristor Surge Protector Devices TSPD protect telecommunication circuits such as central office, access, and customer premises equipment from overvoltage conditions. These are

Contextual Info: NP-SE Series Product Preview 140A, TSPD The NP−SE series of Thyristor Surge Protection Devices TSPD protect sensitive electronic equipment from transient overvoltage conditions. They offer the designer a more robust alternative to the standard 100 A rated devices.

2sk4145

Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
Contextual Info: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current

2sk4145

Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
Contextual Info: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)

IC51-128

Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials

LGA 1156 PIN OUT diagram

Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
Contextual Info: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)

CO2V

Abstract: NP0720SAMCT3G NP0640SAMCT3G
Contextual Info: NP-SAMC Series 50A, Ultra Low Capacitance TSPD The NP−SAMC series of Low Capacitance Thyristor Surge Protection Devices TSPD protect sensitive electronic equipment from transient overvoltage conditions. Due to their ultra low off−state capacitance (Co), they offer minimal signal distortion for high speed