F08S Search Results

marking code maxim label

Contextual Info: P roduct S h ír c a t io n s Integrated C ircuitsQoup LH28F008SftR-85 8M F]ash M em o ry 1M fc8 H o d elN o IÜ F08S50) Spec No. : EL105019 Issue D ate: A u g u s t3 1 ,1 9 9 8 SHARP F08S50 # H a n d le this document carefully for it contains material protected by international

F08S60S

Contextual Info: F08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

GAAS FET AMPLIFIER for optical receiver

Abstract: transimpedance amplifier F0100504B F0321818M F0832483T FET differential amplifier circuit
Contextual Info: F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 02.09.02 Features F0100504B - 2.2kΩ high transimpedance - 29dB gain 3.3V/5V 2.5Gb/s NRZ Receiver - Low noise typ.6pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 1900MHz O/E Bandwidth - Over 25dB wide dynamic range

Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: SHARP February 1997 FLASH MEMORY LH28F008SAHR-85 Ver. 2.0E SHARP CORPORATION Engineering Department 2 Flash Memory Development Center Tenri Integrated Circuits 1C Group I L HF 0 8 S 1 6 1 CONTENTS 1 FEATURES 2 2 PRODUCT OVERVIEW 3 3 PRINCIPLES OF OPERATION

F08S60ST

Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

f08s60sn

Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

386SL

Abstract: E0000 LH28F008SA LH28F008SAT-85 LHF08S49
Contextual Info: P l« m T S M < 1 1 1 C W i\S liuca;io.l Iranf- Croup LH28FD08SAJ-85 8M Rash Memory (Model No.: F08S49 Spec No.: EL105017 Issue Date: August 31, 1998 SHARP F08S49 • H a n d le this document carefully for it contains material protected by international

80386SL microprocessor features

Abstract: 82360SL 80386sl intel 80386SL AH 36
Contextual Info: I LHF 0 8 S 1 6 LH28F008SAHR-85 8 MBIT 1 MBIT x 8 FLASH MEMORY 1. FEATURES •High-Density Symmetrically Blocked Architec­ ture - Sixteen 64 KByte Blocks • Very High-Performance Read - 85 ns Maximum Access Time • SRAM-Compatible Write Interface •Extended Cycling Capability

f08s60

Abstract: F08S60S FFD08S60S
Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier „ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft „ „ High Reverse Voltage and High Reliability „ RoHS Compliant recovery characteristics (trr<30ns). They has half the

f08s60sn

Abstract: TT2202 2202L FFP08S60SNTU f08s60
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier ̈ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft ̈ ̈ High Reverse Voltage and High Reliability ̈ RoHS Compliant recovery characteristics (trr<30ns). They has half the

F08S60ST

Abstract: FFPF08S60STTU
Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

PREAMPLIFIER TRANSIMPEDANCE optic fet

Abstract: F0100406B amplifier transimpedance TRANSIMpedance Amplifier F0100504B F0321818M F0831252T F0832483T F0100406
Contextual Info: F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier 03.05.27 Features F0100406B - 5kΩ high transimpedance - 30dB high gain 3.3V 1.25Gbit/s NRZ Receiver - Low noise typ.3.5pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 900MHz O/E Bandwidth - Over 30dB wide dynamic range

diode 8a 600v

Abstract: diode T B 8A
Contextual Info: FFP08S60S tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 30 ns @ IF = 8 A The FFP08S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

agc ic

Contextual Info: F0100406B 3.3V 1.25Gbit/s Transimpedance Amplifier 03.05.27 Features F0100406B - 5kΩ high transimpedance - 30dB high gain 3.3V 1.25Gbit/s NRZ Receiver - Low noise typ.3.5pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 900MHz O/E Bandwidth - Over 30dB wide dynamic range

Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

f08s60sn

Abstract: TT2202 TT220 F08S f08s60
Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

FFP08S60S

Abstract: FFP08S60STU
Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF=8A The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

F02S

Abstract: bd4448 D4148
Contextual Info: IIAIEt SURFACE MOUNT SWITCHING DIODES 350 mW SWITCHING DIODES/TO-236 Device Type P eak Reverse Voltage VRM : V V Marking Code : BAS 16 8A V 70 BAV99 B AW 56 BAL99 IM B D 4148 IM B D 4448 A6 JJ JE JD JF A2 A3 O P E R A T IN G /S TO R A G E TE M P E R A TU R E R A N G E -65°C to +175°C

f08s60sn

Abstract: diode 8a 600v
Contextual Info: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted

Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: F08S60S 8 A, 600 V, STEALTH II Diode Features Description • Stealth Recovery trr = 30 ns @ IF = 8 A The F08S60S is STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

FFP08S60S

Abstract: FFP08S60STU F08S60S
Contextual Info: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial