F08S60 Search Results
F08S60 Price and Stock
onsemi FFPF08S60STTU8A, 600V, STEALTH II Diode - Rail/Tube (Alt: FFPF08S60STTU) |
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FFPF08S60STTU | Tube | 2,000 |
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FFPF08S60STTU | 950 | 1 |
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FFPF08S60STTU | 31,000 |
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Glenair Inc 660-015NF08S6-03- Bulk (Alt: 660-015NF08S6-03) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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660-015NF08S6-03 | Bulk | 3 Weeks | 1 |
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660-015NF08S6-03 |
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660-015NF08S6-03 | Bulk | 1 |
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660-015NF08S6-03 |
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Glenair Inc 660-009NF08S6-01- Bulk (Alt: 660-009NF08S6-01) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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660-009NF08S6-01 | Bulk | 3 Weeks | 1 |
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660-009NF08S6-01 |
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660-009NF08S6-01 | Bulk | 1 |
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660-009NF08S6-01 |
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Fairchild Semiconductor Corporation FFPF08S60STUDiode Switching 600V 8A 2-Pin(2+Tab) TO-220F Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FFPF08S60STU | 31 |
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Fairchild Semiconductor Corporation FFP08S60SNRECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 8A, 600V V(RRM), SILICON, TO-220AC (Also Known As: F08S60SN) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FFP08S60SN | 225 |
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F08S60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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F08S60SContextual Info: F08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial |
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ffpf08s60sf08s60s | |
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Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. |
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ffp08s60s | |
F08S60STContextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. |
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ffpf08s60stf08s60st | |
f08s60sn
Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
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ffpf08s60snf08s60sndiode 8a 600vffpf08s60sntu | |
f08s60
Abstract: F08S60S FFD08S60S
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ffd08s60sf08s60f08s60s | |
f08s60sn
Abstract: TT2202 2202L FFP08S60SNTU f08s60
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ffp08s60snf08s60sntt22022202l+2 | |
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Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier ̈ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft ̈ ̈ High Reverse Voltage and High Reliability ̈ RoHS Compliant recovery characteristics (trr<30ns). They has half the |
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ffd08s60s | |
F08S60ST
Abstract: FFPF08S60STTU
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ffpf08s60stf08s60stffpf08s60sttu | |
diode 8a 600v
Abstract: diode T B 8A
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ffp08s60so-220-2ldiode 8a 600vdiode t b 8a | |
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Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. |
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ffpf08s60sn | |
f08s60sn
Abstract: TT2202 TT220 F08S f08s60
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ffp08s60snf08s60sntt2202tt220+2 | |
FFP08S60S
Abstract: FFP08S60STU
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ffp08s60sffp08s60stu | |
f08s60sn
Abstract: diode 8a 600v
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ffp08s60snf08s60sndiode 8a 600v | |
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Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. |
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ffpf08s60st | |
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FFP08S60S
Abstract: FFP08S60STU F08S60S
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ffp08s60sffp08s60stuf08s60s | |
F08S60S
Abstract: FFPF08S60S FFPF08S60STU
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ffpf08s60sf08s60sffpf08s60stu | |
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Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. |
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ffp08s60sn | |
SMD CA2
Abstract: FFD08S60S hyper fast diode fairchild
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ffd08s60ssmd ca2hyper fast diode fairchild | |
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Contextual Info: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. rrt <30ns @ IF=8A • High Reverse Voltage and High Reliability • Avalanche Energy Rated The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast |
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ffpf08s60s | |
F08S60S
Abstract: f08s60
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ffpf08s60sffpf08s60stuf08s60sf08s60 | |
f08s60
Abstract: FFP08S60S F08S60S
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ffp08s60sffp08s60stuf08s60f08s60s | |
F08S60S
Abstract: F08S
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ffp08s60sf08s60sf08s | |
F08S60S
Abstract: ffp08s60stu FFP08S60S
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ffp08s60sf08s60sffp08s60stu | |
F08S60SN
Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300
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ffp08s60snf08s60snffp08s60sntuto220-2l+2 | |