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    onsemi FFPF08S60STTU

    8A, 600V, STEALTH II Diode - Rail/Tube (Alt: FFPF08S60STTU)
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    Avnet Americas FFPF08S60STTU Tube 2,000
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    Bristol Electronics FFPF08S60STTU 950
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    Flip Electronics FFPF08S60STTU 31,000
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    Fairchild Semiconductor Corporation FFPF08S60STU

    Diode Switching 600V 8A 2-Pin(2+Tab) TO-220F Tube
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    Bristol Electronics FFPF08S60STU 31
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    Fairchild Semiconductor Corporation FFP08S60SN

    RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 8A, 600V V(RRM), SILICON, TO-220AC (Also Known As: F08S60SN)
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    Quest Components FFP08S60SN 225
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    Fairchild Semiconductor Corporation FFD08S60S-F085

    RECTIFIER DIODE, AVALANCHE, 1 PHASE, 1 ELEMENT, 8A, 600V V(RRM), SILICON NITRIDE, TO-252 (Also Known As: F08S60S)
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    Quest Components FFD08S60S-F085 54
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    Fairchild Semiconductor Corporation FFPF08S60SNTU

    600 V, 8 A STEALTH II DIODE Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
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    ComSIT USA FFPF08S60SNTU 900
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    F08S60S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F08S60S

    Contextual Info: F08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		FFPF08S60S F08S60S PDF

    Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60S FFP08S60S PDF

    F08S60ST

    Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST F08S60ST PDF

    f08s60sn

    Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
    Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60SN FFPF08S60SN f08s60sn diode 8a 600v FFPF08S60SNTU PDF

    f08s60

    Abstract: F08S60S FFD08S60S
    Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier „ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft „ „ High Reverse Voltage and High Reliability „ RoHS Compliant recovery characteristics (trr<30ns). They has half the


    Original     		FFD08S60S f08s60 F08S60S PDF

    f08s60sn

    Abstract: TT2202 2202L FFP08S60SNTU f08s60
    Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60SN FFP08S60SN f08s60sn TT2202 2202L FFP08S60SNTU f08s60 PDF

    Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier ̈ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft ̈ ̈ High Reverse Voltage and High Reliability ̈ RoHS Compliant recovery characteristics (trr<30ns). They has half the


    Original     		FFD08S60S PDF

    F08S60ST

    Abstract: FFPF08S60STTU
    Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST F08S60ST FFPF08S60STTU PDF

    diode 8a 600v

    Abstract: diode T B 8A
    Contextual Info: FFP08S60S tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 30 ns @ IF = 8 A The FFP08S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as


    Original     		FFP08S60S FFP08S60S O-220-2L diode 8a 600v diode T B 8A PDF

    Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60SN FFPF08S60SN PDF

    f08s60sn

    Abstract: TT2202 TT220 F08S f08s60
    Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60SN FFP08S60SN f08s60sn TT2202 TT220 F08S f08s60 PDF

    FFP08S60S

    Abstract: FFP08S60STU
    Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF=8A The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60S FFP08S60S FFP08S60STU PDF

    f08s60sn

    Abstract: diode 8a 600v
    Contextual Info: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted


    Original     		FFP08S60SN FFP08S60SN f08s60sn diode 8a 600v PDF

    Contextual Info: STEALTH II Rectifier F08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The F08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFPF08S60ST FFPF08S60ST PDF

    FFP08S60S

    Abstract: FFP08S60STU F08S60S
    Contextual Info: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		FFP08S60S FFP08S60S FFP08S60STU F08S60S PDF

    F08S60S

    Abstract: FFPF08S60S FFPF08S60STU
    Contextual Info: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		FFPF08S60S FFPF08S60S F08S60S FFPF08S60STU PDF

    Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60SN FFP08S60SN PDF

    SMD CA2

    Abstract: FFD08S60S hyper fast diode fairchild
    Contextual Info: STEALTHTM II Rectifier FFD08S60S_F085 Features 8A, 600V Stealth2 Rectifier „ High Speed Switching Max. trr<30ns @ IF = 8A The FFD08S60S_F085 is stealth 2 rectifier with soft „ „ High Reverse Voltage and High Reliability „ RoHS Compliant recovery characteristics (trr<30ns). They has half the


    Original     		FFD08S60S SMD CA2 hyper fast diode fairchild PDF

    Contextual Info: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. rrt <30ns @ IF=8A • High Reverse Voltage and High Reliability • Avalanche Energy Rated The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast


    Original     		FFPF08S60S FFPF08S60S PDF

    F08S60S

    Abstract: f08s60
    Contextual Info: F08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth 2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The F08S60S is stealth2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		FFPF08S60S FFPF08S60STU F08S60S f08s60 PDF

    f08s60

    Abstract: FFP08S60S F08S60S
    Contextual Info: FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		FFP08S60S FFP08S60STU f08s60 F08S60S PDF

    F08S60S

    Abstract: F08S
    Contextual Info: FFP08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		FFP08S60S F08S60S F08S PDF

    F08S60S

    Abstract: ffp08s60stu FFP08S60S
    Contextual Info: FFP08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFP08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial


    Original     		FFP08S60S FFP08S60S F08S60S ffp08s60stu PDF

    F08S60SN

    Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300
    Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFP08S60SN FFP08S60SN F08S60SN FFP08S60SNTU TO220-2L diode 8a 600v C200300 PDF