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    Fairchild Semiconductor Corporation

    Fairchild Semiconductor Corporation FFP08S60SN

    RECTIFIER DIODE, 1 PHASE, 1 ELEMENT, 8A, 600V V(RRM), SILICON, TO-220AC (Also Known As: F08S60SN)
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    Quest Components FFP08S60SN 225
    • 1 $0.90
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    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
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    Fairchild Semiconductor Corporation FFPF08S60SNTU

    600 V, 8 A STEALTH II DIODE Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA FFPF08S60SNTU 900
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    F08S60SN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    f08s60sn

    Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
    Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		ffpf08s60snf08s60sndiode 8a 600vffpf08s60sntu PDF

    f08s60sn

    Abstract: TT2202 2202L FFP08S60SNTU f08s60
    Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		ffp08s60snf08s60sntt22022202l+2ffp08s60sntuf08s60 PDF

    Contextual Info: STEALTHTM II Rectifier F08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The F08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		ffpf08s60sn PDF

    f08s60sn

    Abstract: TT2202 TT220 F08S f08s60
    Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		ffp08s60snf08s60sntt2202tt220+2f08sf08s60 PDF

    f08s60sn

    Abstract: diode 8a 600v
    Contextual Info: FFP08S60SN tm 8A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 25 ns @ IF = 8 A • Max Forward Voltage, VF = 3.4 V (@ TC = 25°C) The FFP08S60SN is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted


    Original     		ffp08s60snf08s60sndiode 8a 600v PDF

    Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		ffp08s60sn PDF

    F08S60SN

    Abstract: FFP08S60SNTU FFP08S60SN TO220-2L diode 8a 600v C200300
    Contextual Info: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		ffp08s60snf08s60snffp08s60sntuto220-2l+2diode 8a 600vc200300 PDF