FFPF08S60STTU Search Results
FFPF08S60STTU Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FFPF08S60STTU |
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Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 600V 8A TO220 | Original | 5 |
FFPF08S60STTU Price and Stock
onsemi FFPF08S60STTUDIODE AVALANCHE 600V 8A TO220F2L |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FFPF08S60STTU | Tube |
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Buy Now | |||||||
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FFPF08S60STTU | 950 |
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FFPF08S60STTU | 760 |
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FFPF08S60STTU | 31,000 |
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FFPF08S60STTU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
F08S60STContextual Info: STEALTH II Rectifier FFPF08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The FFPF08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. |
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FFPF08S60ST FFPF08S60ST F08S60ST | |
F08S60ST
Abstract: FFPF08S60STTU
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FFPF08S60ST FFPF08S60ST F08S60ST FFPF08S60STTU | |
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Contextual Info: FFPF08S60ST 8 A, 600 V STEALTHTM II Diode Features Description • Stealth Recovery trr = 30 ns @ IF = 8 A The FFPF08S60S is STEALTH II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. |
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FFPF08S60ST FFPF08S60S | |
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Contextual Info: STEALTH II Rectifier FFPF08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The FFPF08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. |
Original |
FFPF08S60ST FFPF08S60ST |