EUDYNA DEVICES Search Results

FHX35

Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
Contextual Info: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.

EUDYNA

Abstract: FSX017X/001 FSX017X
Contextual Info: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high

sumitomo connectors

Abstract: opnext Edd 44 OC-768 JP3407400005
Contextual Info: Leading Optical Device Manufacturers Release Common Specifications for 40 Gbit/s Solutions Based on XLMD Optical Device Multi-Source Agreement Multi-Source Agreement Enables Multiple Vendors to Produce 40 Gbit/s Optical Devices Based on a Unified Standard

fujitsu hemt

Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

Contextual Info: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

FSX017X

Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

Eudyna Devices

Abstract: VIP 22 A FB113 ECM-A0
Contextual Info: ES/EMY1401VI Preliminary Data Sheet Rev1.2 July,2005 ES/EMY1401VI 11.3 Gb/s LN Modulator Driver IC 1. Features 1 2) 3) 4) 5) 6) Operation up to 11.3 Gb/s Internal Input 50 ohm Termination Output Voltage Swing: 5.0V 50ohm Load) Power Supply Voltage : -5.20V

emy14

Contextual Info: EMY1441HI Datasheet Rev1.1 J anuary,2006 EMY1441HI 11.3 Gb/s Direct Modulation Driver IC for +3.3V Supplied Voltage 1. Abstr act 1 2) 3) 4) 5) 6) 7) 8) Operation speed over 11.3Gb/s Output Modulation Current:60mA typ.,25ohm Load) Power Supply Voltage : +3.3V

ECM-A00

Contextual Info: ES/EMY1421HI Preliminary Datasheet Rev1.1 J une, 2006 ES/EMY1421HI 11.3 Gb/s EA Modulator Driver IC for +3.3V Supplied Voltage 1. Abstr act 1 2) 3) 4) 5) 6) Operation speed over 11.3Gb/s Output Amplitude: 1.4Vpp - 3.0Vpp typ.,50ohm Load) Cross Point Adjustable: 40% -85%

EUDYNA

Abstract: LN Modulator Driver Eudyna Devices FMM3117VN EUDYNA CROSS
Contextual Info: FMM3117VN Datasheet Rev. B2 April, 2004 FMM3117VN 12.5Gbps Dual-drive LN Modulator Driver IC 1. Features 1 2) 3) 4) 5) 6) 7) 8) High Speed Operation up to 12.5Gbps On-chip 50 ohm Termination for High Speed Data Input Rapid Rise/Fall Time : 25ps Typ., 20-80%)

Filtronic

Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15

Eudyna Devices

Abstract: EMM5206LP microwave sensor RO4003C k band oscillator 2329500 JESD22-A114-C EUDYNA Eudyna high power Canton AS 100 SC
Contextual Info: EMM5206LP K Band Oscillator MMIC FEATURES ・ High Output Power : Pout =5 dBm @ Vdd = 4 V typ. ・ Low Power Consumption : Idd = 20 mA @ Vdd = 4 V (typ.) ・ Low Phase Noise : n = -100 dBc/Hz @ 100 kHz offset, fosc = 24 GHz ・ Low Spurious Level : RJ2nd < -40 dBc

Contextual Info: ELM5964 ELM5964-16F C-Band Band Internally Matched FET FEATURES  High Output Power: P1dB=42.5dBm 42.5dBm Typ (  High Gain: G1dB=10.0dB (Typ.)  High PAE: add=40 %( Typ.)  Frequency Band: 5.9~6.4GHz  Impedance Matched Zin/Zout = 50 50

EUDYNA

Abstract: ecm-a00-213 FLD5F20NP FMM3116VN FMM3117VN 10 gb laser diode EAM laser ECM-A00 laser weapon
Contextual Info: FMM3116VN Data Sheet Rev. 1.0 December, 2005 FMM3116VN 12.5Gb/s Electro Absorption Modulator Driver IC 1. Features High Speed Operation up to 12.5Gb/s 2 On-chip 50 ohm Termination for High Speed Data Input 3) Rapid Rise/Fall Time : 25ps Typ., 20-80%) 4) Adjustable Output Voltage Swing : 1.5VPP to 2.5VPP (50ohm Load)

mmic n1

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Eudyna Devices

Abstract: Doppler Sensor K-band DOPPLER 24ghz k band oscillator doppler sensor mmic case styles EMM5206LP EUDYNA Canton AS 100 SC RM1101
Contextual Info: EMM5206LP K Band Oscillator MMIC FEATURES ・High Output Power : Pout=5dBm @Vdd=4V typ. ・Low Power Consumption : Idd=20mA @Vdd=4V (typ.) ・Low Phase Noise : Φn=-100dBc/Hz @100KHz offset, fosc=24GHz ・Low Spurious Level : RJ2nd<-40dBc ・High Reliability, High Breakdown Voltage : Vgdo=20V, Igdo=160uA

EUDYNA

Abstract: ka-band mixer fmm5117 A114 es JESD22-A114-C RO4003
Contextual Info: ES/FMM5117YE K,Ka-Band Down-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5117YE is a double, single balanced diode mixer downconverter MMIC. The device consists of a low noise mixer, LO

FMM5048

Abstract: FMM5048GJ EUDYNA 1425GHz Eudyna Devices power amplifiers ku vsat amplifier Eudyna Devices Fmm5048GJ
Contextual Info: FMM5048GJ VSAT MMIC FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 26.0dB(Typ.) Low In/Out VSWR Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package (12 X 15 X 3.5mm) DESCRIPTION

ka-band mixer

Abstract: A114 es FMM5116YE JESD22-A114-C RO4003 Ka-band
Contextual Info: ES/FMM5116YE K,Ka-Band Up-Converter MMIC FEATURES •High Conversion Gain, Gc = -11 dB Typ. •High Linearity •Broad RF Frequency Band ; 20 - 30 GHz •SMT Laminate Package (YE Package) •Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5116YE is a double, single balanced diode mixer upconverter MMIC. The device consists of a low noise mixer, LO

FMM5701X

Abstract: EUDYNA eudyna an
Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1.4dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-28GHz DESCRIPTION The FMM5701X is a LNA MMIC designed for applications in the

Eudyna Devices

Abstract: fmm106
Contextual Info: FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available

Contextual Info: 1,550nm Modulator Integrated DFB Laser FLD5F10NP-A FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection

C-Band Power GaAs FET

Contextual Info: FLC257MH-6 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-6 is a power GaAs FET that is designed for general