EMRS3 Search Results

DFSDM

Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

Contextual Info: ARM-based Embedded MPU SAM9G35 DATASHEET Description The SAM9G35 is a member of the Atmel series of 400 MHz ARM926EJ-S embedded MPUs that support high bandwidth communication and advanced user interfaces and are optimized for industrial applications such as building automation,

DNU-A13

Contextual Info: W3H64M16E-XBX 128MB – 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS  Data rate = 400 Mb/s, 533 Mb/s  Larger ball pitch for higher reliability  Package:  Pinout compatible with 2-Rank Version • 79 Plastic Ball Grid Array PBGA , 11 x 14mm

Contextual Info: 512MB, 1GB, 2GB: x72, SR 240-Pin DDR2 RDIMM Features DDR2 SDRAM Registered DIMM MT18HTF6472(P) – 512MB MT18HTF12872(P) – 1GB MT18HTF25672(P) – 2GB For component information or data sheets, please refer to the Micron Web site: www.micron.com/products/

W641GG2KB

Abstract: gddr3 schematic WBGA-136 W641GG2
Contextual Info: W641GG2KB 1-Gbit GDDR3 Graphics SDRAM Table of Contents 1. GENERAL DESCRIPTION . 6 2. FEATURES . 7

Contextual Info: 512MB, 1GB, 2GB x72, SR PC2-3200, PC2-4200, 240-Pin DDR2 SDRAM RDIMM DDR2 REGISTERED SDRAM DIMM MT18HTF6472 – 512MB MT18HTF12872 – 1GB (PRELIMINARY‡) MT18HTF25672 – 2GB (PRELIMINARY‡) For the latest data sheet, please refer to the Micron Web

Contextual Info: 512MB, 1GB, 2GB: x72, SR 240-Pin DDR2 VLP RDIMM Features DDR2 VLP Registered DIMM MT18HVF6472(P) – 512MB MT18HVF12872(P) – 1GB MT18HVF25672(P) – 2GB (Advance) For component information or data sheets, please refer to the Micron Web site: www.micron.com/products/modules

MT4HTF3264HY-53e

Abstract: MT47H16M16BP MT4HTF3264H
Contextual Info: 128MB, 256MB, 512MB x64, SR – 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT4HTF1664H – 128MB MT4HTF3264H – 256MB MT4HTF6464H – 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features

MT47H32M16B

Abstract: MT47H16M16BP
Contextual Info: 128MB, 256MB, 512MB x64, SR PC2-3200, PC2-4200, 240-Pin DDR2 SDRAM UDIMM DDR2 SDRAM UNBUFFERED DIMM MT4HTF1664A – 128MB MT4HTF3264A – 256MB (PRELIMINARY‡) MT4HTF6464A – 512MB (PRELIMINARY‡) For the latest data sheet, please refer to the Micron Web

Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM MT36HTJ25672(P) – 2GB MT36HTJ51272(P) – 4GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features Figure 1: 240-Pin DIMM (MO-237 R/C “K”)

sm57

Abstract: SM41 EMRS-30 EMRSJ-30 SM-41 SM-57
Contextual Info: E-Series Surface Mount Mixer 200 - 3000 MHz EMRS-30, EMRSJ-30 V3.00 Features ● ● ● SM-41 LO Power: +7 dBm Up to +1 dBm RF Surface Mount Specifications @ 25°C Frequency Range RF LO IF 200 - 3000 MHz 200 - 3000 MHz DC - 1000 MHz Conversion Loss dB 200 - 3000 MHz

Contextual Info: Features • Core • • • • • • – ARM926EJ-S ARM Thumb® Processor running at up to 400 MHz @ 1.0V +/- 10% – 16 Kbytes Data Cache, 16 Kbytes Instruction Cache, Memory Management Unit Memories – One 64-Kbyte internal ROM embedding bootstrap routine: Boot on NAND Flash,

ba2p1

Contextual Info: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features

Contextual Info: 256MB, 512MB, 1GB x64, SR PC2-3200, PC2-4200, 240-Pin DDR2 SDRAM UDIMM DDR2 SDRAM UNBUFFERED DIMM MT8HTF3264A – 256MB MT8HTF6464A – 512MB (PRELIMINARY‡) MT8HTF12864A – 1GB (PRELIMINARY‡) For the latest data sheet, please refer to the Micron Web

Contextual Info: PRELIMINARY‡ 1Gb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H256M4–32 MEG X 4 X 8 BANKS MT47H128M8–16 MEG X 8 X 8 BANKS MT47H64M16–8 MEG X 16 X 8 BANKS For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/datasheets Features

Contextual Info: 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features

Contextual Info: 512MB, 1GB, 2GB x72, DR PC2-3200, PC2-4200, 240-Pin DDR2 SDRAM RDIMM DDR2 SDRAM REGISTERED DIMM MT18HTF6472D – 512MB MT18HTF12872D – 1GB (PRELIMINARY‡) MT18HTF25672D – 2GB (PRELIMINARY‡) For the latest data sheet, please refer to the Micron Web

IBIS

Abstract: MT47H128M4BT
Contextual Info: PRELIMINARY‡ 2GB, 4GB x72, ECC, DR PC2-3200, PC2-4200, 240-Pin DDR2 SDRAM RDIMM DDR2 REGISTERED SDRAM DIMM MT36HTJ25672 – 2GB MT36HTJ51272 – 4GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features

Contextual Info: 512MB, 1GB, 2GB x64, DR – 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTF6464H – 512MB MT16HTF12864H – 1GB MT16HTF25664H – 2GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features

MT47H32M16

Contextual Info: PRELIMINARY‡ 512Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H128M4 – 32 MEG x 4 x 4 BANKS MT47H64M8 – 16 MEG x 8 x 4 BANKS MT47H32M16 – 8 MEG x 16 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features

Contextual Info: Features • Core • • • • • • • – ARM926EJ-S ARM Thumb® Processor running at up to 400 MHz @ 1.0V +/- 10% – 16 Kbytes Data Cache, 16 Kbytes Instruction Cache, Memory Management Unit Memories – One 64-Kbyte internal ROM embedding bootstrap routine: Boot on NAND Flash,

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AT91SAM9M11

Abstract: VC 5022 emmc bga 162 EN 50156-1 schematic diagram of ip camera sensor H.264 encoder chip 2012 cmos 4000 logic book eMMC 4.51 charge battery 4060 4X4 push-button matrix keyboard
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • • – 4-port, 4-bank DDR2/LPDDR Controller – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

Contextual Info: Features • Core • • • • • • – ARM926EJ-S ARM Thumb® Processor running at up to 400 MHz @ 1.0V +/- 10% – 16 Kbytes Data Cache, 16 Kbytes Instruction Cache, Memory Management Unit Memories – One 64-Kbyte internal ROM embedding bootstrap routine: Boot on NAND Flash,